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Infineon Technologies IDWD150E65E7XKSA1
- Part No.:
- IDWD150E65E7XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-247-2
- Datasheet:
-
IDWD150E65E7XKSA1.pdf
- Description:
- DIODE GEN PURP 650V 200A TO247-2
- Quantity:
- Payment:
- Shipping:
Inventory:328
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Product details
Overview
IDWD150E65E7XKSA1 from Infineon is a soft-recovery 650 V, 150 A emitter-controlled silicon power diode in PG-TO247-2-STD package, designed for high-reliability switching in DC-link and freewheeling positions of industrial UPS, microinverters, and residential air conditioning inverters. It delivers low and temperature-stable forward voltage (VF = 1.55 V @ Tvj = 175 °C), very soft reverse recovery (trr = 175 ns @ Tvj = 175 °C), and cosmic ray ruggedness.
For engineers reviewing the IDWD150E65E7XKSA1 datasheet, IDWD150E65E7XKSA1 pinout, IDWD150E65E7XKSA1 application, or IDWD150E65E7XKSA1 equivalent, key selection criteria include soft recovery behavior under high di/dt (1000 A/µs), junction temperature capability up to 175 °C, JEDEC-qualified industrial reliability, and humidity-robust packaging for harsh environments.
Technical Context
This emitter-controlled Si diode uses a proprietary soft-switching structure that minimizes reverse recovery current overshoot (Irrm = 56.3 A @ Tvj = 175 °C) and reduces EMI generation during turn-off. Its internal emitter inductance is tightly controlled at 13 nH (measured 5 mm from case), enabling predictable dynamic performance across temperature.
The device operates with low thermal resistance (Rth(j–c) = 0.33 K/W) and supports continuous forward current up to 153 A at Tc = 100 °C. Its reverse recovery charge (Qrr = 6.4 µC @ Tvj = 175 °C) and energy loss (Erec = 0.99 mJ) are optimized for high-efficiency, high-frequency hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse blocking voltage; enables use in 400–600 V DC-link applications without derating. |
| IF (rated) | 150 A - Continuous forward current at Tc = 25 °C; defines base conduction capability in freewheeling paths. |
| VF @ 150 A / 175 °C | 1.55 V - Low, stable forward drop ensures minimal conduction loss at elevated junction temperatures. |
| trr @ 150 A / 175 °C | 175 ns - Soft, temperature-stable recovery time reduces switching stress on complementary IGBTs/MOSFETs. |
| Irrm @ 150 A / 175 °C | 56.3 A - Peak reverse recovery current; low value limits voltage spikes and snubber requirements. |
| Rth(j–c) | 0.33 K/W - Enables efficient heat transfer to heatsink; supports high-power density PCB layouts. |
| Tvjmax | 175 °C - Extended junction temperature rating improves system derating margin and lifetime in sealed enclosures. |
Pinout & Package
Package: PG-TO247-2-STD-NA8.8 (standard 3-pin TO-247 outline with 2 active terminals; backside cathode metal exposed for thermal and electrical connection).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Main cathode terminal; electrically and thermally connected to backside metal; requires low-inductance mounting to heatsink. |
| Backside | Cathode | Exposed cathode metallization; serves as primary thermal path and secondary electrical cathode connection. |
| Pin 2 | Anode | Single anode terminal; carries full forward current; layout must minimize loop inductance for soft recovery benefit. |
Key Features
| Feature | Design Value |
|---|---|
| Soft reverse recovery | trr = 175 ns and Irrm = 56.3 A @ Tvj = 175 °C - Reduces voltage overshoot and EMI in hard-switched converters. |
| Temperature-stable VF | VF decreases only marginally from 2.1 V (25 °C) to 1.55 V (175 °C) - Improves efficiency consistency across operating temperature range. |
| Cosmic ray ruggedness | Qualified per JEDEC JESD22-A121 - Ensures robust single-event burnout (SEB) immunity in high-altitude or critical infrastructure applications. |
| Humidity robust design | JEDEC MSL1 rated - Eliminates moisture-related failure mechanisms during reflow and long-term operation in humid environments. |
| Pb-free & RoHS compliant | Pb-free lead plating - Meets global environmental compliance requirements without compromising solder joint reliability. |
Applications
| String and Micro Inverter | Datacenter UPS |
|---|---|
Use Scenario: Freewheeling diode in half-bridge LLC resonant DC–DC stages and MPPT boost converters. IC Role / Device Role / Timing Role: Fast, soft-recovery freewheeling diode enabling zero-voltage switching (ZVS) assist and reduced switching losses. Use Value: Low Qrr (2.16 µC @ 25 °C) and soft trr reduce gate drive stress on synchronous MOSFETs and improve converter efficiency by >0.8% at full load. |
Use Scenario: Output rectification and DC-link clamping in modular, high-density 3-phase UPS inverters. IC Role / Device Role / Timing Role: High-current, high-reliability output diode handling 150 A continuous current with minimal thermal runaway risk. Use Value: Rth(j–c) = 0.33 K/W and Tvjmax = 175 °C allow sustained operation at 100 °C heatsink temperature without derating. |
| Residential Aircon Inverter | Industrial Welding Power Supply |
Use Scenario: DC-link freewheeling in variable-speed compressor drives operating in ambient temperatures up to 65 °C. IC Role / Device Role / Timing Role: Temperature-stable VF diode minimizing conduction loss drift over seasonal ambient variations. Use Value: VF = 1.55 V @ 175 °C ensures <2% conduction loss increase from cold start to thermal steady-state, improving SEER rating. |
Use Scenario: Main rectifier and snubber diode in IGBT-based inverter welders with 10 ms surge duty cycles. IC Role / Device Role / Timing Role: Surge-rated diode handling IFSM = 600 A (10 ms sine half-wave) while maintaining soft recovery. Use Value: Low Erec (0.99 mJ @ 175 °C) reduces snubber dissipation and enables compact, air-cooled welder designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-reliability 650 V soft-recovery diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDW20G65C7XKSA1 | Higher IF = 200 A; slightly higher VF (1.6 V @ 175 °C); same trr/Qrr profile and PG-TO247-2 package. | Better suited for higher-current UPS modules where thermal headroom is constrained. | Select when system peak current exceeds 150 A but soft recovery and cosmic ray ruggedness remain mandatory. |
| STTH160HF065DJ | Standard hyperfast diode; trr = 35 ns (faster), but Irrm = 82 A and no cosmic ray qualification; VF = 1.85 V @ 175 °C. | Lower cost option for non-critical commercial UPS where EMI and radiation hardness are not required. | Choose only if JEDEC industrial qualification and soft recovery are not design requirements. |
Compared with IDW20G65C7XKSA1, IDWD150E65E7XKSA1 offers tighter thermal derating control at 150 A, while STTH160HF065DJ trades ruggedness and softness for raw speed-making IDWD150E65E7XKSA1 optimal for mission-critical, high-temperature industrial systems requiring predictable EMI and lifetime assurance.
Availability
IDWD150E65E7XKSA1 is available at Aetrix Electronics and suitable for string inverters, datacenter UPS systems, and residential air conditioning inverters requiring stable component supply, JEDEC-qualified reliability, and consistent soft-recovery performance across temperature.
Supply support for IDWD150E65E7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDWD150E65E7XKSA1 belongs to Infineon's Emitter Controlled Diode (ECD) 7 family, engineered specifically for high-efficiency, high-reliability switching in solar inverters, UPS, and HVAC systems where soft recovery, cosmic ray immunity, and extended temperature operation are critical.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies IF = 153 A at Tc = 100 °C, confirming continuous operation up to 100 °C case temperature with appropriate heatsinking. Exceeding this requires derating per the IF vs. Tc curve in Figure 2 of the datasheet; operation beyond 100 °C case risks exceeding Tvjmax = 175 °C under worst-case thermal resistance conditions.
Is IDWD150E65E7XKSA1 suitable for paralleling multiple devices?
Yes-the device exhibits positive temperature coefficient for VF, enabling natural current sharing. However, layout symmetry (matched trace inductance/resistance) and identical mounting torque (0.6 Nm for M3 screws) are mandatory to ensure balanced thermal and electrical loading across paralleled units.
Does this diode require a gate resistor or external snubber network?
No gate resistor is needed-it is a passive diode. An external RC snubber is optional and only recommended if measured voltage overshoot exceeds 10% of VRRM during system validation; its soft recovery (low dirr/dt and Erec) typically eliminates the need for snubbers in well-designed layouts.
How does cosmic ray ruggedness impact field reliability in ground-level applications?
Cosmic ray ruggedness ensures immunity to single-event burnout (SEB) induced by atmospheric neutrons-even at sea level. This directly extends mean time between failures (MTBF) in 24/7 industrial UPS and telecom rectifiers where latent failure modes from particle strikes must be eliminated.
IDWD150E65E7XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-247-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 200A
- Voltage - Forward (Vf) (Max) @ If:
- 2.1 V @ 150 A
- Speed:
- Fast Recovery =< 500ns, > 5A (Io)
- Reverse Recovery Time (trr):
- 97 ns
- Current - Reverse Leakage @ Vr:
- 20 µA @ 650 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-2-2
- Operating Temperature - Junction:
- -40°C ~ 175°C
IDWD150E65E7XKSA1 FAQ
1.How can I place an order for IDWD150E65E7XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDWD150E65E7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDWD150E65E7XKSA1 reliable?
The price and inventory of IDWD150E65E7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDWD150E65E7XKSA1 is usually 5 days.
3.What payment methods are accepted for IDWD150E65E7XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDWD150E65E7XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDWD150E65E7XKSA1?
IDWD150E65E7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDWD150E65E7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDWD150E65E7XKSA1?
For technical support, including IDWD150E65E7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDWD150E65E7XKSA1 requirements.
6.How does Aetrix verify that IDWD150E65E7XKSA1 is sourced from the original manufacturer or authorized distributors?
All IDWD150E65E7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDWD150E65E7XKSA1 meets industry standards.
7.What is the process for return or replacement of IDWD150E65E7XKSA1?
All IDWD150E65E7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDWD150E65E7XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDWD150E65E7XKSA1 part is unused and in its original packaging.
Return procedure for IDWD150E65E7XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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