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Infineon Technologies IDWD25G200C5XKSA1
- Part No.:
- IDWD25G200C5XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-247-2
- Datasheet:
-
IDWD25G200C5XKSA1.pdf
- Description:
- SIC DISCRETE
- Quantity:
- Payment:
- Shipping:
Inventory:240
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Product details
Overview
IDWD25G200C5XKSA1 from Infineon is a 2000 V, 25 A CoolSiC™ Gen5 silicon carbide Schottky diode in PG-TO247-2-U01 package, designed as a high-voltage freewheeling or anti-parallel diode in three-phase string inverters and EV DC fast chargers. It delivers 1.5 V forward voltage at 25 A/25 °C, zero reverse recovery charge, and 100 V/ns dv/dt ruggedness for reliable operation under hard-switching conditions.
For engineers reviewing the IDWD25G200C5XKSA1 datasheet, IDWD25G200C5XKSA1 pinout, IDWD25G200C5XKSA1 application, or IDWD25G200C5XKSA1 equivalent, key selection criteria include its 175 °C max junction temperature, 0.25 K/W junction-to-case thermal resistance, tight VF distribution (±0.25 V), and XT interconnection technology enabling superior thermal cycling robustness in high-power industrial converters.
Technical Context
This SiC Schottky diode operates without minority-carrier injection or reverse recovery, eliminating switching losses and EMI associated with PN diodes. Its unipolar conduction mechanism ensures temperature-independent turn-off behavior and stable VF across -55 °C to 175 °C operating range.
The device uses Infineon's .XT interconnect technology to reduce thermal resistance and enhance power cycling capability. Its 2000 V VRRM rating and 193 A non-repetitive surge current support high-voltage DC link applications where reliability under transient overloads is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 2000 V - Enables use in 1500 V DC bus systems with 33% safety margin against transients |
| IF (rated) | 25 A - Continuous forward current at Tc = 154 °C, defining thermal design point for heatsink sizing |
| VF @ 25 A / 25 °C | 1.5 V - Low conduction loss yielding ~37.5 W dissipation at rated current, reducing cooling requirements |
| Rth(j-c) | 0.25 K/W - Enables efficient heat transfer to heatsink; supports >468 W power dissipation at Tc = 25 °C |
| dv/dt ruggedness | 100 V/ns - Withstands rapid voltage transients in hard-switched topologies without false turn-on or failure |
| Tvj max | 175 °C - Allows sustained operation in high-ambient environments such as enclosed EV charging cabinets |
| QC @ 1500 V | 224 nC - Low capacitive charge minimizes switching loss in high-frequency PFC and inverter stages |
Pinout & Package
Package: PG-TO247-2-U01 - Industry-standard 3-pin outline modified to 2-terminal configuration (anode/cathode only), featuring isolated mounting flange and optimized copper clip for low-inductance, high-current paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Main high-side current exit terminal; electrically connected to metal tab for direct heatsink mounting and lowest possible thermal resistance |
| Pin 2 | Anode | Low-inductance input terminal; designed for direct PCB trace or busbar connection to minimize parasitic oscillation during di/dt events |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery current | Eliminates switching loss and EMI in hard-switched converters; enables higher frequency operation without snubbers |
| Tight VF distribution (±0.25 V) | Reduces current imbalance in parallel-connected diodes, simplifying derating and thermal management |
| .XT interconnection technology | Improves thermal cycling lifetime by >3× vs. standard wire-bonded TO-247, critical for EV charger field reliability |
| Temperature-independent switching | Ensures consistent timing and loss profile across full operating temperature range, easing control loop design |
Applications
| Grid-Tied Solar Inverters | EV DC Fast Charging Stations |
|---|---|
Use Scenario: Three-phase NPC or T-type inverter stage converting 1000–1500 V DC to 400–690 V AC grid interface. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode in IGBT/SiC MOSFET half-bridge legs, conducting during dead-time and reactive energy return. Use Value: Zero Qrr prevents shoot-through risk and reduces filter size; 175 °C rating allows compact heatsink integration within outdoor-rated enclosures. | Use Scenario: Secondary-side rectification and isolation in liquid-cooled 150–350 kW EV charging modules. IC Role / Device Role / Timing Role: High-voltage output rectifier in phase-shifted full-bridge or LLC resonant converter, handling bidirectional power flow during V2G testing. Use Value: 100 V/ns dv/dt ruggedness withstands fast voltage transitions during soft-start and fault clearing; low VF cuts conduction loss by >40% vs. Si counterparts. |
| Industrial Motor Drives | High-Voltage UPS Systems |
Use Scenario: Regenerative braking path in 690 V AC drives powering large HVAC compressors or conveyor systems. IC Role / Device Role / Timing Role: Freewheeling diode across IGBTs in active front-end (AFE) rectifiers, returning regenerated energy to DC link. Use Value: Surge capability (193 A IF,SM) handles motor stall currents without derating; 0.25 K/W Rth(j-c) enables air-cooled designs up to 75 kW. | Use Scenario: Bypass and hold-up rectification in modular 400–800 V DC UPS systems supporting datacenter server racks. IC Role / Device Role / Timing Role: Redundant output diode in paralleled power modules, ensuring uninterrupted DC output during module hot-swap or failure. Use Value: Tight VF distribution ensures balanced current sharing across parallel strings; qualified per JEDEC22-A108 for 10-year field life at 150 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D25065I | 650 V VRRM, 25 A rated, TO-247-2L package, VF = 1.8 V @ 25 A/25 °C | Not suitable for 1500 V DC bus; limited to 800 V systems with reduced safety margin | Select only for lower-voltage, cost-sensitive industrial SMPS where 2000 V rating is unnecessary |
| FFSH3065B | 650 V VRRM, 30 A rated, TO-247-3L Si FRD with Qrr = 120 nC | Exhibits reverse recovery, requiring snubbers and limiting switching frequency; higher EMI generation | Acceptable only in legacy 650 V designs where SiC upgrade path is constrained by layout or gate drive compatibility |
Compared with C3D25065I and FFSH3065B, IDWD25G200C5XKSA1 uniquely supports 2000 V systems with zero Qrr, 0.25 K/W thermal resistance, and JEDEC-qualified industrial reliability-making it the sole viable option for next-generation 1500 V+ EV chargers and solar inverters demanding long-term field stability.
Availability
IDWD25G200C5XKSA1 is available at Aetrix Electronics and suitable for grid-tied solar inverters, EV DC fast charging stations, and industrial motor drives requiring stable component supply with guaranteed long-term availability and traceable sourcing.
Supply support for IDWD25G200C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.
IDWD25G200C5XKSA1 belongs to the CoolSiC™ Gen5 discrete diode product line, engineered specifically for high-efficiency, high-reliability 1500 V+ power conversion in renewable energy and e-mobility infrastructure.
FAQ
Is IDWD25G200C5XKSA1 pin-compatible with previous CoolSiC™ Gen4 diodes in PG-TO247-2?
Yes, IDWD25G200C5XKSA1 uses the identical PG-TO247-2-U01 mechanical footprint and terminal assignment (Pin 1 = cathode, Pin 2 = anode) as Gen4 devices like IDW20G65C5, enabling drop-in replacement without PCB redesign. Thermal and electrical performance improvements are realized without layout changes.
What is the maximum recommended case temperature for continuous operation?
The datasheet specifies a maximum case temperature of 154 °C for rated 25 A continuous forward current. Operation above this requires derating per the IF = f(Tc) curve; at 135 °C, rated current increases to 37 A, and at 25 °C it reaches 77 A, subject to heatsink thermal design constraints.
Does IDWD25G200C5XKSA1 require a negative gate voltage or special driving circuitry?
No - as a Schottky diode, IDWD25G200C5XKSA1 has no gate terminal and requires no drive circuitry. It conducts when anode voltage exceeds cathode voltage by ≥VF, and blocks when reverse biased. Its two-terminal structure eliminates gate-related design complexity entirely.
How does the .XT interconnection technology improve reliability versus standard wire bonding?
.XT replaces aluminum wire bonds with copper clips and advanced solder metallurgy, reducing thermal resistance by 20% and increasing power cycling lifetime by >3×. This directly extends field life in applications with frequent thermal transients, such as EV chargers cycling between standby and full load multiple times daily.
IDWD25G200C5XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- TO-247-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 2000 V
- Current - Average Rectified (Io):
- 77A
- Voltage - Forward (Vf) (Max) @ If:
- 1.75 V @ 25 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 375 µA @ 2 kV
- Capacitance @ Vr, F:
- 2850pF @ 1V, 100kHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-2-U01
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDWD25G200C5XKSA1 FAQ
1.How can I place an order for IDWD25G200C5XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDWD25G200C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDWD25G200C5XKSA1 reliable?
The price and inventory of IDWD25G200C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDWD25G200C5XKSA1 is usually 5 days.
3.What payment methods are accepted for IDWD25G200C5XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDWD25G200C5XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDWD25G200C5XKSA1?
IDWD25G200C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDWD25G200C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDWD25G200C5XKSA1?
For technical support, including IDWD25G200C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDWD25G200C5XKSA1 requirements.
6.How does Aetrix verify that IDWD25G200C5XKSA1 is sourced from the original manufacturer or authorized distributors?
All IDWD25G200C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDWD25G200C5XKSA1 meets industry standards.
7.What is the process for return or replacement of IDWD25G200C5XKSA1?
All IDWD25G200C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDWD25G200C5XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDWD25G200C5XKSA1 part is unused and in its original packaging.
Return procedure for IDWD25G200C5XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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