Infineon Technologies IDWD30G120C5XKSA1

Overview

IDWD30G120C5XKSA1 from Infineon is a 1200 V, 30 A silicon carbide Schottky diode (CoolSiC™ G5) in PG-TO247-2-U01 package, designed for high-efficiency power conversion in high-voltage DC systems. It delivers zero reverse recovery charge, 1.45–1.8 V forward voltage at 30 A and 25–150 °C, 150 V/ns dv/dt ruggedness, and 0.33 K/W junction-to-case thermal resistance. Used in industrial UPS, EV charging stations, and string inverters where fast switching and low conduction loss are critical.

For engineers reviewing the IDWD30G120C5XKSA1 datasheet, IDWD30G120C5XKSA1 pinout, IDWD30G120C5XKSA1 application, or IDWD30G120C5XKSA1 equivalent, key selection criteria include its 1200 V blocking capability, surge current rating up to 240 A (non-repetitive), .XT interconnection technology for enhanced thermal performance, and temperature-independent switching behavior-critical for reliable operation in high-power, high-temperature environments.

Technical Context

This CoolSiC™ G5 diode uses a planar SiC Schottky barrier structure with no PN junction, eliminating minority-carrier storage and enabling truly zero reverse recovery current and absence of forward recovery overshoot. Its electrical behavior remains stable across –55 °C to +175 °C junction temperature range.

The .XT interconnection technology replaces traditional solder die-attach with sintered silver, reducing thermal resistance by ~20% versus standard TO-247 packages and improving long-term power cycling reliability under high ΔT conditions typical in solar and EV charging applications.

Key Specifications

Pinout & Package

Package: PG-TO247-2-U01 - Industry-standard 3-lead outline modified to 2-terminal configuration (anode/cathode only), with isolated metal tab for direct thermal path to heatsink. Dimensions per Infineon outline drawing: 21.1 × 15.9 × 20.1 mm (L × W × H), M3 mounting screw compatible.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.

Compared with C3D03060E-TR and FFSH30120ADN-F085, IDWD30G120C5XKSA1 provides superior thermal performance (0.33 K/W), higher surge robustness (240 A), and guaranteed 1200 V operation-making it the preferred choice for mission-critical, high-power-density 1000 V+ systems requiring long-term reliability.

Availability

IDWD30G120C5XKSA1 is available at Aetrix Electronics and suitable for string inverters, industrial UPS systems, and EV charging infrastructure requiring stable component supply, extended product lifecycle, and traceable sourcing for high-reliability deployments.

Supply support for IDWD30G120C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDWD30G120C5XKSA1 belongs to the CoolSiC™ G5 family-designed specifically for high-efficiency, high-voltage power conversion in solar inverters, EV charging, and industrial UPS where zero-recovery loss and thermal resilience are mandatory.

FAQ

What is the maximum recommended case temperature for continuous operation?

The datasheet specifies 30 A continuous forward current at T_c = 150 °C, with absolute maximum junction temperature of 175 °C. For reliable long-term operation, Infineon recommends limiting T_c to ≤135 °C to maintain ≥80% of rated current and ensure >10-year field lifetime under thermal cycling stress.

Can IDWD30G120C5XKSA1 replace a silicon diode in an existing 1200 V design?

Yes, but layout and gate drive must be reviewed: its zero Q_rr eliminates snubbers but increases di/dt stress on adjacent switches; PCB trace inductance must be minimized, and gate resistors may require adjustment to manage voltage overshoot during turn-off of co-packaged IGBTs or MOSFETs.

Is the .XT interconnection technology compatible with standard reflow or wave soldering?

No-.XT uses sintered silver, not solder. Mounting requires mechanical attachment (M3 screw) to a heatsink with thermal interface material. The device is not intended for PCB reflow; the backside metal tab is the sole thermal and electrical cathode path, and soldering would damage the sintered interface.

Does this diode require a negative gate voltage or special biasing?

No-it is a passive two-terminal Schottky diode with no gate terminal. It conducts when anode voltage exceeds cathode voltage by >V_F; no external bias, gate drive, or control signal is required. Pin 2 is anode, pins 1 and backside are cathode-no polarity reversal or active control needed.