Infineon Technologies IDWD40G120C5XKSA1

Overview

IDWD40G120C5XKSA1 from Infineon is a 1200 V, 40 A silicon carbide Schottky diode (CoolSiC™ G5) in PG-TO247-2-U01 package, designed for high-efficiency power conversion in high-voltage DC links. It delivers zero reverse recovery charge, 1.45–1.8 V forward voltage at 40 A/25°C, and 150 V/ns dv/dt ruggedness-enabling use in 1500 V string inverters and industrial UPS rectifier stages.

For engineers reviewing the IDWD40G120C5XKSA1 datasheet, IDWD40G120C5XKSA1 pinout, IDWD40G120C5XKSA1 application, or IDWD40G120C5XKSA1 equivalent, key selection criteria include junction-to-case thermal resistance (0.27–0.35 K/W), surge current capability (290 A non-repetitive), temperature-independent switching, and .XT interconnection technology for enhanced thermal cycling reliability.

Technical Context

This SiC Schottky diode operates as a unipolar, majority-carrier device with no minority-carrier storage-eliminating reverse recovery losses and enabling hard-switched topologies up to 100 kHz. Its 1200 V blocking rating supports 1500 V PV string systems and 800 V DC bus architectures.

The .XT interconnection technology reduces thermal resistance by optimizing solder joint integrity and copper clip bonding, directly improving power cycle lifetime under Tc = 135°C operation. Junction temperature range spans –55°C to +175°C, with derated continuous forward current of 40 A at Tc = 147°C.

Key Specifications

Pinout & Package

Package: PG-TO247-2-U01 - Industry-standard 3-lead outline with isolated mounting hole, optimized for high-current, low-inductance PCB layouts and press-fit heatsink interfaces. Backside cathode enables direct thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D04065E-TR and STPSC40H12D, IDWD40G120C5XKSA1 provides superior thermal performance (0.27 K/W), higher dv/dt immunity (150 V/ns), and validated 1500 V system compatibility-making it the preferred choice for mission-critical renewable energy and EV infrastructure.

Availability

IDWD40G120C5XKSA1 is available at Aetrix Electronics and suitable for string inverters, industrial UPS systems, and EV charging stations requiring stable component supply, long-lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IDWD40G120C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDWD40G120C5XKSA1 belongs to the CoolSiC™ G5 family-designed specifically for high-frequency, high-efficiency power conversion in solar, UPS, and EV charging applications where zero Q_rr, low V_F, and robust thermal performance are mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies 40 A continuous forward current at T_c = 147°C, with absolute maximum junction temperature of 175°C. Operation above 147°C requires derating per Figure 2 (I_F vs. T_c). Thermal design must ensure R_th(c-sink) ≤ 0.2 K/W to maintain safe margins under full load.

Does this diode require a gate driver or external control signal?

No-IDWD40G120C5XKSA1 is an uncontrolled, passive two-terminal device. It conducts when forward biased and blocks when reverse biased, with no gate, control pin, or drive circuitry required. Its operation is fully determined by applied voltage polarity and magnitude.

Can it replace a silicon fast recovery diode in an existing 1200 V design?

Yes-with layout review. The lower V_F and zero Q_rr reduce losses, but the faster switching demands attention to parasitic inductance. Snubber networks may be simplified or removed, and PCB trace inductance must be minimized to avoid voltage overshoot exceeding 1200 V.

Is the PG-TO247-2-U01 package compatible with standard TO247 heatsinks?

Yes-the PG-TO247-2-U01 footprint matches JEDEC TO247-2L mechanical dimensions, including mounting hole location and lead pitch. However, the backside cathode requires electrically isolated thermal interface material (e.g., ceramic washer or silicone pad) when mounted to a grounded heatsink.