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Infineon Technologies IDWD40G200C5XKSA1
- Part No.:
- IDWD40G200C5XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-247-2
- Datasheet:
-
IDWD40G200C5XKSA1.pdf
- Description:
- SIC DISCRETE
- Quantity:
- Payment:
- Shipping:
Inventory:240
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Product details
Overview
IDWD40G200C5XKSA1 from Infineon is a 2000 V, 40 A CoolSiC™ Schottky diode (Gen 5) in PG-TO247-2-U01 package, designed as a high-voltage freewheeling/anti-parallel diode in three-phase string inverters for EV charging infrastructure. It delivers 1.5 V forward voltage at 40 A and 25 °C, exhibits zero reverse recovery current, and supports 100 V/ns dv/dt ruggedness for robust operation in fast-switching SiC-based power stages.
For engineers reviewing the IDWD40G200C5XKSA1 datasheet, IDWD40G200C5XKSA1 pinout, IDWD40G200C5XKSA1 application, or IDWD40G200C5XKSA1 equivalent, key selection criteria include its 2000 V blocking capability, tight VF distribution (1.5–1.75 V), junction temperature range up to 175 °C, thermal resistance Rth(j-c) of 0.18–0.23 K/W, and surge current rating of 275 A (non-repetitive, 10 ms).
Technical Context
This Gen 5 silicon carbide Schottky diode replaces conventional silicon fast recovery diodes and SiC PiN diodes in high-efficiency, high-frequency DC–AC conversion stages. Its unipolar conduction mechanism eliminates minority-carrier storage, enabling zero reverse recovery charge (Qrr = 0) and eliminating switching losses associated with tail current.
The device leverages Infineon's .XT interconnection technology for enhanced thermal performance and mechanical reliability under thermal cycling. Its temperature-independent switching behavior and low VF drift (2.3 V at 150 °C, IF = 40 A) ensure stable conduction loss across industrial operating ranges (−55 °C to +175 °C junction).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 2000 V - Enables use in 1500 V DC-link systems with 33% safety margin for overvoltage transients. |
| IF (rated) | 40 A - Continuous forward current at Tc = 151 °C, defining thermal design boundary for heatsink sizing. |
| VF @ 40 A, 25 °C | 1.5–1.75 V - Low conduction loss improves system efficiency; tight distribution reduces binning needs. |
| Rth(j-c) | 0.18–0.23 K/W - Enables high-power dissipation (652 W at Tc = 25 °C) with minimal junction-to-case temperature rise. |
| dv/dt ruggedness | 100 V/ns - Withstands rapid voltage transients without false turn-on, critical in hard-switched SiC inverter legs. |
| Tvj max | 175 °C - Supports extended operation in high-ambient environments such as enclosed EV charging cabinets. |
| IF,SM (10 ms) | 275 A @ Tc = 25 °C - Handles short-circuit or overload events without catastrophic failure during protection response time. |
Pinout & Package
Package: PG-TO247-2-U01 - Industry-standard 3-lead TO-247 outline modified to 2-terminal configuration (anode/cathode only), optimized for high-current, low-inductance mounting and superior thermal transfer via copper clip (.XT interconnect).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| PIN 1 | Cathode | Main high-side current exit terminal; electrically connected to heatsink-compatible metal tab for direct thermal path. |
| PIN 2 | Anode | Low-inductance input terminal; designed for low-parasitic connection to switching node in half-bridge leg. |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery current | Eliminates Qrr-related switching losses and EMI generation in high-dV/dt SiC inverter topologies. |
| Tight VF distribution | ±0.125 V tolerance at 40 A enables consistent parallel operation without current-sharing resistors. |
| Temperature-independent switching | Zero Qrr and stable VF vs. Tvj simplify thermal modeling and eliminate dynamic derating curves. |
| .XT interconnection | Copper clip bonding reduces thermal resistance by ~30% vs. wire-bonded TO-247, improving power cycling lifetime. |
| Specified dv/dt ruggedness | 100 V/ns rating validated per JEDEC standards ensures reliable operation during fast SiC MOSFET commutation. |
Applications
| EV Onboard Charger (OBC) | DC Fast Charging Station |
|---|---|
Use Scenario: Bidirectional AC–DC conversion stage using three-level NPC or T-type inverter topology. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode across SiC MOSFETs in high-side switches, conducting during dead-time and reactive power flow. Use Value: Zero Qrr prevents shoot-through risk and reduces EMI filtering burden; 2000 V rating supports 1000 V+ DC bus architectures. | Use Scenario: Front-end rectification and DC–DC isolation stage in liquid-cooled 150–350 kW charging modules. IC Role / Device Role / Timing Role: High-voltage output rectifier in phase-shifted full-bridge or LLC resonant converter secondary side. Use Value: Low VF (1.5 V) minimizes conduction loss at 40 A continuous, while 275 A surge rating handles startup inrush and fault currents. |
| Solar String Inverter | Industrial Motor Drive |
Use Scenario: Three-phase inverter stage converting PV array DC (up to 1500 V) to grid-synchronized AC. IC Role / Device Role / Timing Role: Freewheeling diode in IGBT or SiC MOSFET half-bridge legs, clamping inductive kickback during PWM transitions. Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during 50–100 ns SiC gate drive edges; 175 °C max Tvj allows compact heatsink design. | Use Scenario: Regenerative braking circuit in high-power servo drives (>100 kW) requiring bidirectional energy return to DC link. IC Role / Device Role / Timing Role: Reverse-conducting path for motor back-EMF during deceleration, operating at elevated case temperatures (>135 °C). Use Value: Stable VF of 2.3 V at 150 °C ensures predictable conduction loss; low Rth(j-c) enables direct mounting to cold plate without thermal interface degradation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D04065E (Wolfspeed) | 650 V rating, 40 A, TO-247-2L; lower VRRM limits use to ≤800 V DC-link systems. | Not suitable for 1500 V+ EV charging or solar string inverters requiring 2000 V blocking. | Select only where system voltage < 900 V and cost sensitivity outweighs voltage headroom needs. |
| SS12020 (STMicroelectronics) | 2000 V, 40 A, TO-247-2L; VF = 1.7 V typ. at 40 A/25 °C; higher Rth(j-c) = 0.32 K/W. | Acceptable for same voltage class but requires larger heatsink due to 78% higher thermal resistance. | Prefer when existing ST ecosystem integration exists, but verify thermal margin with 0.32 K/W Rth(j-c). |
Compared with C3D04065E and SS12020, IDWD40G200C5XKSA1 offers superior voltage rating margin, lowest VF at rated current, and best-in-class thermal resistance-making it optimal for space-constrained, high-efficiency 1500–2000 V DC-link designs where thermal management and switching integrity are critical.
Availability
IDWD40G200C5XKSA1 is available at Aetrix Electronics and suitable for EV onboard chargers, DC fast charging stations, solar string inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing for production programs.
Supply support for IDWD40G200C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDWD40G200C5XKSA1 belongs to the CoolSiC™ Gen 5 Schottky diode product line, engineered specifically for high-efficiency, high-reliability power conversion in 1500 V+ DC systems such as EV charging and utility-scale solar inverters.
FAQ
What is the maximum allowable case temperature for continuous operation?
The datasheet specifies IF = 40 A at Tc = 151 °C as the rated continuous forward current condition. Operation above this temperature requires derating per the IF = f(Tc) curve (Figure 4), with absolute maximum case temperature limited by soldering profile (260 °C for 10 s) and thermal interface material ratings.
Does IDWD40G200C5XKSA1 require a gate resistor or snubber network?
No-this is a two-terminal Schottky diode with no gate terminal. Unlike MOSFETs or IGBTs, it does not require gate drive components. However, a small RC snubber (e.g., 100 Ω + 1 nF) across the diode may be used in ultra-fast switching circuits to damp parasitic ringing induced by layout inductance and junction capacitance.
Can IDWD40G200C5XKSA1 be paralleled with other units for higher current handling?
Yes-its tight forward voltage distribution (1.5–1.75 V at 40 A) and positive temperature coefficient of VF enable stable current sharing without external balancing resistors. Parallel operation requires matched PCB layout, symmetric thermal mounting, and identical interconnect inductance to avoid dynamic imbalance during transients.
Is the PG-TO247-2-U01 package RoHS and REACH compliant?
Yes-Infineon certifies IDWD40G200C5XKSA1 as compliant with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Full compliance documentation, including substance declarations and test reports, is available through Infineon's official product portal and Aetrix Electronics' technical support team.
IDWD40G200C5XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- TO-247-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 2000 V
- Current - Average Rectified (Io):
- 114A
- Voltage - Forward (Vf) (Max) @ If:
- 1.75 V @ 40 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 600 µA @ 2 kV
- Capacitance @ Vr, F:
- 4550pF @ 1V, 100kHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-2-U01
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDWD40G200C5XKSA1 FAQ
1.How can I place an order for IDWD40G200C5XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDWD40G200C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDWD40G200C5XKSA1 reliable?
The price and inventory of IDWD40G200C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDWD40G200C5XKSA1 is usually 5 days.
3.What payment methods are accepted for IDWD40G200C5XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDWD40G200C5XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDWD40G200C5XKSA1?
IDWD40G200C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDWD40G200C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDWD40G200C5XKSA1?
For technical support, including IDWD40G200C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDWD40G200C5XKSA1 requirements.
6.How does Aetrix verify that IDWD40G200C5XKSA1 is sourced from the original manufacturer or authorized distributors?
All IDWD40G200C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDWD40G200C5XKSA1 meets industry standards.
7.What is the process for return or replacement of IDWD40G200C5XKSA1?
All IDWD40G200C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDWD40G200C5XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDWD40G200C5XKSA1 part is unused and in its original packaging.
Return procedure for IDWD40G200C5XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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