Infineon Technologies IDWD50G200C5XKSA1

Overview

IDWD50G200C5XKSA1 from Infineon is a 2000 V, 50 A CoolSiC™ Gen5 Schottky diode in PG-TO247-2-U01 package, designed for high-voltage DC-link freewheeling and snubbing in industrial inverters. It delivers 1.5 V forward voltage at 50 A/25 °C, zero reverse recovery charge, and 100 V/ns dv/dt ruggedness-enabling efficient, reliable operation in 1500 VDC string inverters and EV charging stations.

For engineers reviewing the IDWD50G200C5XKSA1 datasheet, IDWD50G200C5XKSA1 pinout, IDWD50G200C5XKSA1 application, or IDWD50G200C5XKSA1 equivalent, key selection criteria include its 2000 V blocking rating, 175 °C max junction temperature, tight VF distribution (±0.25 V), thermal resistance Rth(j-c) of 0.15–0.19 K/W, and .XT interconnection technology for enhanced thermal cycling robustness.

Technical Context

This SiC Schottky diode operates without minority-carrier storage, eliminating reverse recovery current and associated switching losses. Its unipolar conduction mechanism ensures temperature-independent switching behavior and stable VF across -55 °C to 175 °C junction range.

The device uses Infineon's .XT interconnection technology-copper clip-bonded die attach-to reduce thermal resistance and improve power cycling capability. It is rated for 325 A non-repetitive surge (10 ms, Tc = 25 °C) and supports high dv/dt stress up to 100 V/ns under full 1500 V reverse bias.

Key Specifications

Pinout & Package

Package: PG-TO247-2-U01 - A 3-pin outline variant with isolated mounting hole, optimized for high-current, low-inductance PCB layout and direct heatsink mounting via M3 screw (0.6 Nm torque). Features copper clip bonding (.XT interconnect) and enhanced creepage/clearance for 2000 V isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC diode applications.

Compared with C3D06060A and UJ3D06507K, IDWD50G200C5XKSA1 uniquely combines 2000 V blocking, 100 V/ns dv/dt ruggedness, and .XT thermal performance-making it the only qualified option for industrial 1500 VDC systems requiring long-term reliability under thermal cycling and high di/dt stress.

Availability

IDWD50G200C5XKSA1 is available at Aetrix Electronics and suitable for string 3-phase inverters, EV charging stations, industrial motor drives, and energy storage systems requiring stable component supply and JEDEC-qualified reliability.

Supply support for IDWD50G200C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDWD50G200C5XKSA1 belongs to the CoolSiC™ Gen5 Schottky diode product line, engineered specifically for high-efficiency, high-reliability 1500 VDC power conversion in solar, EV infrastructure, and industrial UPS applications.

FAQ

Is IDWD50G200C5XKSA1 pin-compatible with legacy TO247-2 Si diodes?

No-it uses the PG-TO247-2-U01 outline, which has identical mechanical footprint and mounting hole position as standard TO247-2 but features revised internal leadframe geometry for improved thermal and current handling. PCB land pattern compatibility requires verification against Infineon's package drawing (Figure 1, Datasheet Rev 1.00).

What is the maximum recommended case temperature for continuous 50 A operation?

The datasheet specifies IF = 50 A at Tc = 151 °C under DC conditions with Rth(j-c,max) = 0.19 K/W. For sustained 50 A conduction, heatsink design must maintain case temperature ≤151 °C to ensure Tvj stays within 175 °C limit, assuming no additional thermal interface resistance beyond specified Rth(j-c).

Does IDWD50G200C5XKSA1 require a gate resistor or snubber network?

No-this is a passive Schottky diode with no gate terminal. Unlike SiC MOSFETs, it does not require gate drive components. However, a small RC snubber (e.g., 100 Ω + 1 nF) may be used across anode–cathode in ultra-high-di/dt applications to damp ringing caused by stray inductance, though not required for basic functionality.

How does the .XT interconnection technology improve reliability versus standard wire-bonded TO247 diodes?

.XT replaces aluminum wire bonds with copper clips bonded directly to the SiC die and leadframe, reducing thermal resistance by 25%, increasing current-carrying capacity, and improving power cycling endurance. Accelerated testing shows >10× longer lifetime at ΔTj = 100 K compared to wire-bonded equivalents-critical for outdoor inverters and EV chargers exposed to daily thermal cycles.