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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies IDWD75E120D7XKSA1

Name: IDWD75E120D7XKSA1
Brand: Infineon Technologies
SKU: IDWD75E120D7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDWD75E120D7XKSA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-247-2

Datasheet:: IDWD75E120D7XKSA1.pdf

Description:: DIODE GEN PURP 1200V 116A TO247

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Product details

Overview

IDWD75E120D7XKSA1 from Infineon is a soft and ultra-fast recovery 1200 V emitter-controlled diode rated for 75 A continuous forward current at Tc = 97 °C, featuring 2.3 V typical forward voltage at 175 °C junction temperature, 195 ns reverse recovery time (Tvj = 25 °C, IF = 75 A), and qualified for industrial applications per JEDEC47/20/22. It serves as a freewheeling or anti-parallel diode in high-voltage IGBT modules for string inverters and EV charging systems.

For engineers reviewing the IDWD75E120D7XKSA1 datasheet, IDWD75E120D7XKSA1 pinout, IDWD75E120D7XKSA1 application, or IDWD75E120D7XKSA1 equivalent, key selection criteria include its 1200 V VRRM rating, low Qrr (1.95 µC @ 25 °C), soft recovery behavior (Irrm = 21 A), 175 °C max junction temperature, and PG-TO247-2-STD-NA8.8 package with isolated backside cathode.

Technical Context

This emitter-controlled diode employs Infineon's Emitter Controlled 7 (EC7) technology to achieve ultrafast, soft reverse recovery with low stored charge and reduced switching losses in hard-switched topologies. Its design targets high-efficiency power conversion where di/dt-induced voltage overshoot and EMI must be minimized.

The device operates with a maximum junction temperature of 175 °C and exhibits stable VF (2.3–2.5 V) across temperature, low Rth(j-c) of 0.36–0.47 K/W, and robust humidity resistance-enabling reliable operation in heat pump and industrial inverter environments with high thermal cycling stress.

Key Specifications

Parameter	Value and Actual Design Meaning
VRRM	1200 V - Withstands repetitive reverse voltage up to 1200 V, enabling use in 1000 V DC-link systems with safety margin.
IF (Tc = 97 °C)	75 A - Continuous forward current rating at case temperature of 97 °C, matching typical IGBT module thermal profiles.
VF (IF = 75 A, Tvj = 175 °C)	2.3 V - Low conduction loss at elevated temperature, reducing thermal stress in high-power density designs.
trr (VR = 800 V, IF = 75 A, -diF/dt = 1000 A/µs)	195 ns - Ultrafast recovery minimizes switching loss and voltage spikes during IGBT turn-off.
Qrr (VR = 800 V, IF = 75 A, -diF/dt = 1000 A/µs)	1.95 µC - Low reverse recovery charge reduces dynamic losses and improves system efficiency.
Tvjmax	175 °C - Extended junction temperature capability supports compact heatsink designs and high ambient operation.
Rth(j-c)	0.36–0.47 K/W - Low thermal resistance enables effective heat transfer to heatsink in TO-247-2 package.

Pinout & Package

Package: PG-TO247-2-STD-NA8.8 - Insulated plastic TO-247 variant with 8.8 mm creepage/clearance, M3 mounting screw, and electrically isolated backside cathode terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Cathode	Main cathode connection; electrically tied to isolated backside metal tab for low-inductance, high-current return path.
Backside (tab)	Cathode	Primary cathode terminal; requires insulated mounting to prevent shorting; enables direct thermal interface to heatsink.
Pin 2	Anode	Single anode connection; designed for low-parasitic inductance layout in half-bridge configurations.

Key Features

Feature	Design Value
Soft recovery characteristics	Controlled Irrm (21 A @ 25 °C) and low dirr/dt (120 A/µs) suppress voltage overshoot and EMI in fast-switching IGBT circuits.
Emitter controlled 7 (EC7) technology	Optimized carrier lifetime control delivers consistent trr and Qrr across temperature and current, improving system predictability.
Humidity robust design	Qualified per JEDEC22-A110, ensuring long-term reliability in humid environments such as heat pump outdoor units.
Pb-free lead plating & RoHS compliance	Meets global environmental regulations without compromising solderability or long-term intermetallic stability.

Applications

String Inverter

EV Charging Station

Use Scenario: Freewheeling diode in three-phase inverter stage of residential/commercial solar string inverters operating at 1000 V DC-link.

IC Role / Device Role / Timing Role: Anti-parallel diode paired with 1200 V IGBTs, conducting during dead-time and commutation.

Use Value: Soft recovery limits dv/dt-induced gate oscillation in IGBTs; low Qrr reduces switching loss by ~15% vs. standard FREDs.

Use Scenario: Output rectification and regenerative braking path in 3-phase AC/DC OBC (on-board charger) and off-board DC fast chargers.

IC Role / Device Role / Timing Role: High-reliability freewheeling diode in dual-active-bridge or Vienna rectifier topologies.

Use Value: 175 °C Tvjmax allows sustained 75 A operation under high ambient temperatures common in vehicle-integrated chargers.

Heat Pump Inverter

Industrial Motor Drive

Use Scenario: DC-link clamping and regeneration path in variable-speed compressor drives for air-source and ground-source heat pumps.

IC Role / Device Role / Timing Role: Bidirectional energy handling component during motor deceleration and grid synchronization.

Use Value: Humidity-robust construction prevents corrosion-related failure in condensing outdoor environments.

Use Scenario: Snubber and freewheeling function in 3-level NPC or T-type inverters for HVAC and pump motor drives.

IC Role / Device Role / Timing Role: High-current, high-voltage diode supporting 1200 V SiC or IGBT-based power stages.

Use Value: Low Rth(j-c) and 0.6 Nm mount torque specification ensure mechanical and thermal stability over 10,000+ thermal cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ultrafast recovery diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STTH7512W	1200 V VRRM, 75 A IF, but trr = 250 ns (typ), Qrr = 3.2 µC - higher switching loss and harder recovery.	Limited to lower-frequency (<16 kHz) industrial drives; not recommended for >20 kHz string inverters due to EMI risk.	Lower cost alternative where softness and ultrafast recovery are non-critical.
IXYS MDD75-12N1	1200 V VRRM, 75 A IF, trr = 210 ns, Qrr = 2.4 µC, but Tvjmax = 150 °C and no humidity qualification.	Suitable for indoor industrial enclosures only; not validated for outdoor heat pump or EV charging ambient exposure.	Acceptable for cost-sensitive, thermally benign environments with derated junction temperature margin.

Compared with STTH7512W and MDD75-12N1, IDWD75E120D7XKSA1 provides superior softness (lower Irrm, controlled dirr/dt), extended 175 °C operation, and JEDEC-humidity qualification-making it the preferred choice for high-reliability, high-frequency renewable energy and EV infrastructure systems.

Availability

IDWD75E120D7XKSA1 is available at Aetrix Electronics and suitable for string inverter design, EV on-board/off-board charging systems, and heat pump compressor drives requiring stable component supply, long-lifecycle support, and traceable industrial-grade sourcing.

Supply support for IDWD75E120D7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive, industrial, and renewable energy markets.

IDWD75E120D7XKSA1 belongs to Infineon's Emitter Controlled Diode (EC7) product line, engineered specifically for high-efficiency, high-reliability power conversion in 1200 V systems where soft switching, thermal resilience, and long-term field stability are critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies IF = 75 A at Tc = 97 °C, and Ptot = 161 W at Tc = 100 °C. Operation beyond 100 °C case temperature is not rated for continuous current; thermal design must ensure Tc ≤ 97 °C to maintain full 75 A conduction capability and avoid exceeding Tvjmax = 175 °C.

Is the backside cathode electrically isolated from Pin 1?

Yes. Pin 1 and the backside metal tab are internally connected as a single cathode terminal, but the package features reinforced insulation between the tab and mounting surface. The isolation voltage is rated per IEC 60747-5-2, supporting safe operation with floating heatsinks or insulated thermal interfaces.

Does this diode require a gate resistor or external snubber network?

No. As a passive diode, it has no gate and requires no gate resistor. However, due to its ultrafast recovery, layout parasitics (especially stray inductance >27 nH) can cause voltage ringing; a small RC snubber (e.g., 10 Ω + 100 pF) across anode–cathode is recommended in high-di/dt applications like 20+ kHz inverters.

How does the "emitter controlled" architecture improve performance over standard FREDs?

Emitter Controlled 7 technology uses precise lifetime control in the emitter region to tailor carrier distribution, resulting in lower Qrr, more linear trr vs. diF/dt, and inherently softer recovery (reduced Irrm and dv/dt). This eliminates need for external softening circuits and improves system efficiency and EMI profile versus conventional fast recovery diodes.

IDWD75E120D7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-2

Packaging:: Tube

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 1200 V

Current - Average Rectified (Io):: 116A

Voltage - Forward (Vf) (Max) @ If:: 3 V @ 75 A

Speed:: Fast Recovery =< 500ns, > 5A (Io)

Reverse Recovery Time (trr):: 195 ns

Current - Reverse Leakage @ Vr:: 20 µA @ 1200 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-2-2

Operating Temperature - Junction:: -40°C ~ 175°C

IDWD75E120D7XKSA1 FAQ

1.How can I place an order for IDWD75E120D7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDWD75E120D7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDWD75E120D7XKSA1 reliable?

The price and inventory of IDWD75E120D7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDWD75E120D7XKSA1 is usually 5 days.

3.What payment methods are accepted for IDWD75E120D7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDWD75E120D7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDWD75E120D7XKSA1?

IDWD75E120D7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDWD75E120D7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDWD75E120D7XKSA1?

For technical support, including IDWD75E120D7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDWD75E120D7XKSA1 requirements.

6.How does Aetrix verify that IDWD75E120D7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IDWD75E120D7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDWD75E120D7XKSA1 meets industry standards.

7.What is the process for return or replacement of IDWD75E120D7XKSA1?

All IDWD75E120D7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDWD75E120D7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDWD75E120D7XKSA1 part is unused and in its original packaging.

Return procedure for IDWD75E120D7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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