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Infineon Technologies IDWD80G200C5XKSA1
- Part No.:
- IDWD80G200C5XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-247-2
- Datasheet:
-
IDWD80G200C5XKSA1.pdf
- Description:
- SIC DISCRETE
- Quantity:
- Payment:
- Shipping:
Inventory:240
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Product details
Overview
IDWD80G200C5XKSA1 from Infineon Technologies is a 2000 V, 80 A CoolSiC™ Gen5 Schottky diode in PG-TO247-2-U01 package, designed for high-voltage DC-link freewheeling and snubbing in industrial three-phase inverters and EV charging systems. It delivers 1.5 V forward voltage at 80 A and 25 °C, exhibits zero reverse recovery charge, and maintains stable switching behavior up to 175 °C junction temperature.
For engineers reviewing the IDWD80G200C5XKSA1 datasheet, IDWD80G200C5XKSA1 pinout, IDWD80G200C5XKSA1 application, or IDWD80G200C5XKSA1 equivalent, key selection criteria include its 2000 V repetitive peak reverse voltage, 0.13 K/W junction-to-case thermal resistance, dv/dt ruggedness of 100 V/ns, and tight VF distribution enabling parallel operation without current imbalance.
Technical Context
This silicon carbide Schottky diode replaces conventional silicon fast recovery diodes and SiC JBS devices in high-efficiency, high-frequency power conversion stages. Its unipolar conduction eliminates minority-carrier storage, resulting in no reverse recovery current and negligible switching losses even at 100 kHz+ operating frequencies.
The device leverages Infineon's .XT interconnection technology to achieve 0.13 K/W thermal resistance and supports continuous forward current up to 80 A at Tc = 148 °C. Its 2000 V VRRM rating and 100 V/ns dv/dt capability enable direct use in 1500 V DC-link systems with robust noise immunity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 2000 V - Enables direct integration into 1500 V DC-link systems with 33% voltage margin for transient overvoltage protection. |
| IF (rated) | 80 A at Tc = 148 °C - Sustains full-rated conduction under high-temperature industrial ambient conditions without derating. |
| VF | 1.5 V at IF = 80 A, Tvj = 25 °C - Reduces conduction loss by ~30% vs. comparable Si diodes, improving system efficiency at partial load. |
| Rth(j-c) | 0.13 K/W - Enables compact heatsink design and supports >1 kW power dissipation with minimal thermal interface resistance. |
| dv/dt ruggedness | 100 V/ns - Withstands steep voltage transients in hard-switched topologies without false turn-on or latch-up. |
| QC | 716 nC at VR = 1500 V - Low capacitive charge minimizes turn-off losses and EMI generation during high-di/dt commutation. |
| Tvj max | 175 °C - Allows operation in sealed enclosures or high-ambient environments without forced cooling. |
Pinout & Package
Package: PG-TO247-2-U01 - Industry-standard 3-pin outline modified to 2-terminal configuration (anode/cathode only), featuring enhanced thermal pad and optimized copper clip for low-inductance, high-current mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Cathode | Main high-side current return path; electrically connected to metal tab for low-inductance, low-resistance thermal and electrical connection to heatsink. |
| Pin 2 | Anode | DC-link input terminal; designed for low-parasitic routing to busbar or PCB plane with minimal loop inductance. |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery current | Eliminates switching loss and associated EMI in hard-switched converters; enables ZVS/ZCS soft-switching implementation. |
| Tight VF distribution | ±5% typical VF spread allows reliable parallel operation without external current-sharing resistors or active balancing. |
| Temperature-independent switching | Zero Qrr and constant di/dt response across -55 °C to +175 °C ensures predictable timing in wide-temperature-range applications. |
| .XT interconnection | Direct copper-to-die bonding reduces thermal resistance by 25% vs. standard wire-bonded TO-247 packages, improving power cycling lifetime. |
Applications
| Industrial Three-Phase Inverter | EV DC Fast Charging Station |
|---|---|
Use Scenario: Freewheeling path in 1500 V DC-link IGBT/SiC half-bridge modules for motor drives and renewable energy inverters. IC Role / Device Role / Timing Role: Unidirectional high-voltage clamping and energy recirculation during PWM dead-time intervals. Use Value: Eliminates reverse recovery spikes that cause IGBT gate oscillation and electromagnetic interference, reducing snubber component count by 40%. | Use Scenario: Output rectification and DC-link stabilization in liquid-cooled 250–350 kW EV charging power stacks. IC Role / Device Role / Timing Role: High-efficiency, high-reliability output diode in dual-active-bridge (DAB) or CLLC resonant converter secondary side. Use Value: Maintains <1.75 V VF at 150 °C, enabling >98.5% system efficiency at full load while supporting 20-year field lifetime per JEDEC-22 qualification. |
| High-Voltage UPS System | Medium-Voltage Solar String Inverter |
Use Scenario: Bidirectional energy flow management in 1000–1500 V battery-buffered uninterruptible power supplies. IC Role / Device Role / Timing Role: Reverse-blocking freewheeling element during grid-to-battery and battery-to-grid transitions. Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during rapid polarity reversal, ensuring fault-free mode switching. | Use Scenario: DC-link clamping and regeneration path in transformerless 1500 V solar string inverters with integrated arc-fault detection. IC Role / Device Role / Timing Role: High-reliability snubber diode absorbing inductive kickback from PV array string disconnection events. Use Value: 463 A non-repetitive surge rating withstands lightning-induced transients without degradation, meeting UL 1741 SB requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D06065A | 650 V VRRM, 6 A rated, TO-220-2 package - lower voltage class and current rating. | Suitable only for sub-800 V DC-link systems; not interchangeable in 1500 V architectures. | Select only when system voltage is ≤700 V and thermal budget permits higher Rth(j-c). |
| UJ3D06508TS | 650 V VRRM, 8 A rated, TO-252-2 package - significantly lower voltage and current capability. | Limited to low-power auxiliary supplies or gate-drive isolation circuits, not main DC-link paths. | Use only for auxiliary bias rails or low-current sensing paths where 2000 V blocking is unnecessary. |
Compared with C3D06065A and UJ3D06508TS, IDWD80G200C5XKSA1 provides 3× higher blocking voltage and 10× higher continuous current, making it uniquely suitable for primary 1500 V DC-link freewheeling where thermal and voltage margins are critical.
Availability
IDWD80G200C5XKSA1 is available at Aetrix Electronics and suitable for industrial three-phase inverters, EV DC fast charging stations, high-voltage UPS systems, and medium-voltage solar string inverters requiring stable component supply across multi-year production cycles.
Supply support for IDWD80G200C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
IDWD80G200C5XKSA1 belongs to the CoolSiC™ Gen5 Schottky diode product line, engineered specifically for high-efficiency, high-reliability 1500 V DC-link applications in next-generation power conversion systems.
FAQ
What is the maximum case temperature for continuous operation?
The IDWD80G200C5XKSA1 supports continuous forward current of 80 A at Tc = 148 °C, with absolute maximum junction temperature of 175 °C. Operation above 148 °C requires derating per the IF = f(Tc) curve in the datasheet, and thermal design must ensure Rth(j-c) ≤ 0.13 K/W to avoid exceeding Tvj limit.
Is this diode suitable for paralleling in high-current designs?
Yes - its tight forward voltage distribution (±5% typical) and temperature-independent VF characteristics enable stable current sharing across parallel devices without external ballasting resistors. Parallel operation has been validated per Infineon's AN2019-07 application note for Gen5 CoolSiC diodes.
Does it require a gate resistor or driver circuit?
No - as a Schottky diode, IDWD80G200C5XKSA1 is a passive two-terminal device with no gate terminal or control signal requirement. It conducts automatically when forward biased and blocks when reverse biased, eliminating driver complexity and associated layout constraints.
How does its dv/dt ruggedness compare to silicon diodes?
IDWD80G200C5XKSA1 guarantees 100 V/ns dv/dt ruggedness, exceeding typical silicon FRD ratings (20–50 V/ns) by 2–5×. This enables reliable operation in high-di/dt environments such as SiC MOSFET-based converters without snubber networks or gate shielding.
IDWD80G200C5XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- TO-247-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 2000 V
- Current - Average Rectified (Io):
- 214A
- Voltage - Forward (Vf) (Max) @ If:
- 1.75 V @ 80 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 1.2 mA @ 2 kV
- Capacitance @ Vr, F:
- 9100pF @ 1V, 100kHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-2-U01
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDWD80G200C5XKSA1 FAQ
1.How can I place an order for IDWD80G200C5XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDWD80G200C5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDWD80G200C5XKSA1 reliable?
The price and inventory of IDWD80G200C5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDWD80G200C5XKSA1 is usually 5 days.
3.What payment methods are accepted for IDWD80G200C5XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDWD80G200C5XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDWD80G200C5XKSA1?
IDWD80G200C5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDWD80G200C5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDWD80G200C5XKSA1?
For technical support, including IDWD80G200C5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDWD80G200C5XKSA1 requirements.
6.How does Aetrix verify that IDWD80G200C5XKSA1 is sourced from the original manufacturer or authorized distributors?
All IDWD80G200C5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDWD80G200C5XKSA1 meets industry standards.
7.What is the process for return or replacement of IDWD80G200C5XKSA1?
All IDWD80G200C5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDWD80G200C5XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDWD80G200C5XKSA1 part is unused and in its original packaging.
Return procedure for IDWD80G200C5XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDWD80G200C5XKSA1 Tags
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