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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IGLD60R190D1AUMA1

Name: IGLD60R190D1AUMA1
Brand: Infineon Technologies
SKU: IGLD60R190D1AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGLD60R190D1AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-LDFN Exposed Pad

Datasheet:: IGLD60R190D1AUMA1.pdf

Description:: GAN N-CH 600V 10A LSON-8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IGLD60R190D1AUMA1 from Infineon is a 600 V, 190 mΩ enhancement-mode GaN power transistor in PG-LSON-8-1 package, featuring 3.2 nC gate charge, 0 nC reverse recovery charge, and ultra-fast switching with 6 ns turn-on delay. It serves as a high-efficiency, normally-OFF switch in hard- and soft-switching half-bridge topologies including totem-pole PFC and high-frequency LLC converters.

For engineers reviewing the IGLD60R190D1AUMA1 datasheet, IGLD60R190D1AUMA1 pinout, IGLD60R190D1AUMA1 application, or IGLD60R190D1AUMA1 equivalent, key selection criteria include R_DS(on) at 150 °C (≤260 mΩ), Q_oss at 400 V (16 nC), dV/dt capability (200 V/ns), reverse conduction capability (V_SD = 2.5 V), and Kelvin source configuration for gate drive stability.

Technical Context

This CoolGaN™ device uses a lateral enhancement-mode HEMT structure on silicon substrate, enabling zero reverse recovery (Q_rr = 0 nC) and intrinsic bidirectional conduction without body diode. Its low output charge (Q_oss = 16 nC @ 400 V) and minimal Crss (0.15 pF) support MHz-range switching with reduced voltage overshoot and EMI.

The PG-LSON-8-1 package integrates four Kelvin source terminals (pins 1–4) to decouple power and signal return paths, minimizing gate loop inductance and suppressing oscillation during fast dI/dt transitions (>100 A/μs). Gate threshold voltage is tightly distributed (0.9–1.6 V at 25 °C), ensuring robust noise immunity in high-density SMPS layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	600 V - supports 400 V DC bus designs with 50% voltage margin for surge and ringing
R_DS(on),max	190 mΩ @ T_j = 25 °C - enables <1.5 W conduction loss at 5 A continuous drain current
Q_G,typ	3.2 nC - allows efficient driving with low-power gate drivers (e.g., 1–2 W peak)
Q_oss @ 400 V	16 nC - reduces turn-off energy loss and improves ZVS boundary in LLC resonant converters
dV/dt rating	200 V/ns - sustains reliable operation under fast transient voltage stress in high-frequency bridges
Reverse conduction V_SD	2.5 V @ I_SD = 5 A - supports synchronous rectification mode without external diode
T_j,max	150 °C - qualified for industrial ambient conditions up to 85 °C with derated power

Pinout & Package

Package: PG-LSON-8-1 (8-pin leadless surface-mount, exposed drain pad, 5.0 × 6.0 mm footprint, 0.55 mm height).

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,4 - Kelvin Source	Low-inductance signal return for gate driver ground	Isolates power source path from gate control loop to prevent Miller-induced false turn-on
5,6 - Drain	Main power drain connection	Parallel drain terminals reduce current density and thermal resistance (R_thJC = 2 °C/W)
7 - Source	Power source terminal	Carries full load current; connected to PCB ground plane via thermal pad
8 - Gate	Control input	Receives gate drive signal; requires <10 Ω series resistance to damp high-frequency resonance

Key Features

Feature	Design Value
Enhancement-mode operation	Normally-OFF behavior (V_GS(th) = 0.9–1.6 V) eliminates need for bootstrapping or negative bias in half-bridge high-side use
No reverse-recovery charge	Q_rr = 0 nC enables lossless commutation and eliminates snubber design in totem-pole PFC
Kelvin source configuration	Four dedicated source pins reduce gate loop inductance by >70%, improving switching stability at >1 MHz
Ultra-low C_oss & C_rss	C_oss = 28 pF, C_rss = 0.15 pF - minimizes capacitive coupling and dv/dt-induced gate disturbance
Industrial qualification	JEDEC JESD47/JESD22 compliant - validated for 15-year field life in telecom and server PSU applications

Applications

Totem-Pole PFC

High-Frequency LLC Resonant Converter

Use Scenario: 3.3 kW server PSU with digital control and 98% efficiency target at 230 VAC input.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole bridge; operates at 100–200 kHz with ZVS turn-on.

Use Value: Zero Q_rr eliminates body diode conduction loss and associated thermal stress during reverse recovery.

Use Scenario: 1.5 kW adapter for AI accelerators requiring compact form factor and <15 mW no-load consumption.

IC Role / Device Role / Timing Role: Primary-side GaN switch in asymmetric half-bridge LLC; switching frequency up to 700 kHz.

Use Value: Low Q_oss (16 nC) and fast tr/tf (6/14 ns) enable tight ZVS window and reduced dead-time loss.

High-Density USB PD 140 W Charger

Industrial Motor Drive Inverter Stage

Use Scenario: Dual-port GaN charger with stacked flyback + active clamp forward topology.

IC Role / Device Role / Timing Role: Clamp switch in active clamp forward; handles 600 V blocking and sub-10 ns switching transitions.

Use Value: 200 V/ns dV/dt rating prevents false triggering during high-slew-rate node transitions.

Use Scenario: 5 kW servo drive with space-constrained heatsink and forced-air cooling.

IC Role / Device Role / Timing Role: Phase-leg upper switch in three-phase inverter; operated with 120° commutation and 20 kHz PWM.

Use Value: Reverse conduction capability (V_SD = 2.5 V) enables shoot-through-free freewheeling without external Si diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar enhancement-mode GaN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
GAN063-650WSBDA	R_DS(on) = 170 mΩ, Q_G = 3.4 nC, same PG-LSON-8-1 package, but higher V_GS(th) (1.4–2.0 V)	Slightly higher gate drive voltage margin required; lower R_DS(on) improves conduction loss at high T_j	Preferred when optimizing for <100 °C junction temperature and tighter V_GS noise margin
TPH3208PS	Si MOSFET, R_DS(on) = 190 mΩ, Q_G = 12.5 nC, no reverse conduction, slower switching (tr = 15 ns)	Lacks Q_rr = 0 benefit; requires external anti-parallel diode and larger snubbers	Selected only where GaN supply chain constraints exist and MHz switching is not required

Compared with GAN063-650WSBDA, IGLD60R190D1AUMA1 offers lower gate threshold spread and better dV/dt immunity; versus TPH3208PS, it delivers 60% lower switching loss and eliminates body diode losses in bidirectional topologies.

Availability

IGLD60R190D1AUMA1 is available at Aetrix Electronics and suitable for high-density chargers, server PSUs, and industrial motor drives requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IGLD60R190D1AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and wide-bandgap devices, with global R&D centers and ISO/TS 16949-certified production.

This part belongs to the CoolGaN™ family-designed specifically for high-frequency, high-efficiency power conversion in datacenter, telecom, and consumer charging systems where Si MOSFET limitations in speed and loss become critical.

FAQ

What gate driver voltage range is recommended for IGLD60R190D1AUMA1?

Infineon specifies V_GS = +6 V to +7 V for optimal R_DS(on) and safe operating area, with absolute maximum of +10 V. Driving above +7 V yields diminishing R_DS(on) improvement while increasing gate oxide stress risk. The device is not rated for negative turn-off bias, and V_GS must remain ≥ –10 V per datasheet limits.

Does IGLD60R190D1AUMA1 require a negative gate voltage to ensure turn-off robustness?

No. As an enhancement-mode GaN HEMT, it is inherently normally-OFF with V_GS(th) ≥ 0.9 V. Stable turn-off is achieved with 0 V gate drive; applying negative voltage is unnecessary and may accelerate gate degradation. Infineon's reference designs use 0 V to +6 V gate swing without external pull-down resistors.

How is thermal performance affected by the Kelvin source configuration?

The four Kelvin source pins reduce gate loop inductance but do not directly improve thermal resistance. Junction-to-case thermal resistance remains 2 °C/W (measured via exposed drain pad). However, lower gate oscillation enables consistent switching waveforms, preventing localized hot spots caused by erratic switching transients under high dI/dt conditions.

Can IGLD60R190D1AUMA1 be used in synchronous rectification mode?

Yes. Its intrinsic reverse conduction capability (V_SD = 2.5 V @ 5 A) allows bidirectional current flow without external diodes. In SR applications, it conducts reverse current during the freewheeling phase with predictable forward voltage drop and zero reverse recovery, simplifying control timing and eliminating diode-related losses and EMI.

IGLD60R190D1AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 8-LDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 960µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 157 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-LSON-8-1

IGLD60R190D1AUMA1 FAQ

1.How can I place an order for IGLD60R190D1AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGLD60R190D1AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGLD60R190D1AUMA1 reliable?

The price and inventory of IGLD60R190D1AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGLD60R190D1AUMA1 is usually 5 days.

3.What payment methods are accepted for IGLD60R190D1AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGLD60R190D1AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGLD60R190D1AUMA1?

IGLD60R190D1AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGLD60R190D1AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGLD60R190D1AUMA1?

For technical support, including IGLD60R190D1AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGLD60R190D1AUMA1 requirements.

6.How does Aetrix verify that IGLD60R190D1AUMA1 is sourced from the original manufacturer or authorized distributors?

All IGLD60R190D1AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGLD60R190D1AUMA1 meets industry standards.

7.What is the process for return or replacement of IGLD60R190D1AUMA1?

All IGLD60R190D1AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGLD60R190D1AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGLD60R190D1AUMA1 part is unused and in its original packaging.

Return procedure for IGLD60R190D1AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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