Infineon Technologies IGLR60R190D1XUMA1

Overview

IGLR60R190D1XUMA1 from Infineon is a 600 V, 190 mΩ enhancement-mode GaN power transistor in PG-TSON-8-6 package, featuring 3.2 nC gate charge, 0 nC reverse recovery charge, and 23 A pulsed drain current. It serves as a high-frequency, normally-OFF switching device in hard- and soft-switching half-bridge topologies including totem-pole PFC and LLC resonant converters for industrial SMPS.

For engineers reviewing the IGLR60R190D1XUMA1 datasheet, IGLR60R190D1XUMA1 pinout, IGLR60R190D1XUMA1 application, or IGLR60R190D1XUMA1 equivalent, key selection criteria include ultra-low Qrr (0 nC), Kelvin-source layout for gate drive stability, RDS(on) temperature coefficient, dV/dt immunity (200 V/ns), and industrial-grade JEDEC qualification per JESD47/JESD22.

Technical Context

This CoolGaN™ transistor employs a lateral enhancement-mode HEMT structure with integrated gate protection and Kelvin-source terminals to minimize source inductance and suppress parasitic oscillation during ultra-fast switching. Its zero reverse-recovery charge and low Co(er) (32.5 pF) enable clean turn-off under high dV/dt conditions without tail current.

The device operates with a gate threshold voltage of 0.9–1.6 V at 25 °C and supports gate drive voltages up to ±25 V pulsed. Its thermal resistance RthJC of 2.25 °C/W and 55.5 W power dissipation at TC = 25 °C support high-power-density designs in constrained thermal environments.

Key Specifications

Pinout & Package

Package: PG-TSON-8-6 - 8-pin thermally enhanced surface-mount package with exposed drain pad, optimized for low-inductance PCB layout and high thermal conductivity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar enhancement-mode GaN power transistor applications.

Compared with GS66508T and EPC2053, IGLR60R190D1XUMA1 delivers optimal balance of low Q_rr, Kelvin-source stability, and industrial thermal robustness-making it preferred for 1–5 kW high-reliability SMPS where gate drive fidelity and long-term junction stability are critical.

Availability

IGLR60R190D1XUMA1 is available at Aetrix Electronics and suitable for telecom rectifier modules, datacenter server PSUs, and industrial motor drive inverters requiring stable component supply, full traceability, and lifecycle continuity.

Supply support for IGLR60R190D1XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolGaN™ family-designed specifically for high-frequency, high-efficiency power conversion in industrial, telecom, and datacenter SMPS where silicon MOSFET limitations in speed and loss are critical.

FAQ

What gate drive voltage and current are required for reliable operation?

IGLR60R190D1XUMA1 requires a gate drive voltage of +6 V to +10 V for full enhancement and −5 V to −10 V for robust turn-off. Average gate current must not exceed 7.7 mA, with pulsed current up to 770 mA allowed for 50 ns pulses. The internal gate resistance is 0.74 Ω, so external series resistance must be selected to limit peak current while maintaining 12 ns rise time.

Does this GaN transistor require a negative gate voltage for turn-off?

No, a negative gate voltage is not mandatory but strongly recommended for noise immunity in high-dV/dt environments. The device turns off fully at 0 V, but applying −5 V to −10 V ensures complete depletion and prevents false turn-on during fast transients. Gate-source clamping is built-in to −8 V, supporting robust negative bias implementation.

How does the Kelvin-source pin improve switching performance?

The Kelvin-source pin (Pin 3) provides a dedicated low-inductance return path for the gate driver, decoupling gate-loop impedance from power-source current transients. This eliminates source inductance-induced gate voltage overshoot and ringing, enabling stable 10 ns-scale switching edges and consistent timing in high-frequency half-bridge operation without added snubbers or complex gate drive compensation.

Can IGLR60R190D1XUMA1 replace silicon MOSFETs in existing half-bridge designs?

Yes, but layout and gate drive must be updated: Kelvin-source routing is mandatory, gate resistor values reduced by ~50%, and negative turn-off bias added. The 600 V rating and 190 mΩ R_DS(on) allow direct substitution in 400 V bus systems, but thermal design must account for higher power density-PG-TSON-8-6 requires ≥250 mm² copper pour under the exposed drain pad for rated 55.5 W dissipation.