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Infineon Technologies IGLR65R140D2XUMA1

Name: IGLR65R140D2XUMA1
Brand: Infineon Technologies
SKU: IGLR65R140D2XUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGLR65R140D2XUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IGLR65R140D2XUMA1.pdf

Description:: IGLR65R140D2XUMA1

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Product details

Overview

IGLR65R140D2XUMA1 from Infineon is a 650 V enhancement-mode gallium nitride (GaN) power transistor in PG-TSON-8 package, featuring 140 mΩ R_DS(on) at 25°C, 1.8 nC gate charge, and 14 nC output charge at 400 V. It delivers ultra-fast switching with zero reverse-recovery charge and supports reverse conduction-enabling high-efficiency totem-pole PFC and LLC resonant converters in server SMPS.

For engineers reviewing the IGLR65R140D2XUMA1 datasheet, IGLR65R140D2XUMA1 pinout, IGLR65R140D2XUMA1 application, or IGLR65R140D2XUMA1 equivalent, key selection criteria include its 900 V transient voltage rating, Kelvin source configuration for gate drive stability, 2 kV HBM ESD robustness, and thermal resistance of 2.7 °C/W (junction-to-case), critical for high-power-density industrial and datacenter power designs.

Technical Context

This CoolGaN™ G5 device operates as a normally-off, high-voltage GaN HEMT optimized for hard- and soft-switching topologies. Its internal Kelvin source (Pin 3) separates power and signal return paths to minimize gate loop inductance and suppress false turn-on during fast dV/dt transitions up to 200 V/ns.

It exhibits no body diode reverse recovery (Q_rr = 0 nC), enabling lossless synchronous rectification and bidirectional current flow without commutation losses. The low C_oss (22 pF) and energy-related C_oss,er (26 pF) support high-frequency operation beyond 1 MHz while maintaining predictable switching energy.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	650 V - rated blocking voltage for primary-side switch in 400–600 V DC bus applications
R_DS(on),typ	140 mΩ at 25°C - enables <1.5 W conduction loss at 10 A RMS in compact 1–3 kW converters
Q_G	1.8 nC - reduces gate driver power demand and allows use of low-current, cost-effective drivers
Q_OSS@400 V	14 nC - defines stored energy (2.1 µJ) critical for ZVS timing and snubber design in LLC
dV/dt rating	200 V/ns - ensures reliable operation under fast transients in high-frequency bridge configurations
R_thJC	2.7 °C/W - supports >40 W continuous power dissipation with moderate heatsinking in SMD layout
HBM ESD	2 kV - provides robust handling margin during PCB assembly and system integration

Pinout & Package

IGLR65R140D2XUMA1 uses the PG-TSON-8 surface-mount package (8 mm × 8 mm × 1.2 mm), featuring exposed drain pad for thermal performance and integrated Kelvin source terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1–2 (Source)	Main power source connection	Carries full load current; tied to PCB ground plane for thermal and electrical return
Pin 3 (Kelvin Source)	Gate reference return	Isolated low-inductance path to gate driver IC ground-critical for stable high-dV/dt switching
Pin 4 (Gate)	Control input	Receives gate drive signal; requires tight layout to Pin 3 to avoid oscillation
Pin 5 (Drain)	High-voltage power output	Connected to DC bus or transformer primary; soldered to large copper area for heat extraction

Key Features

Feature	Design Value
Enhancement-mode GaN HEMT	Normally-off operation eliminates external bias circuitry and improves system safety during startup/fault
No reverse-recovery charge (Q_rr = 0 nC)	Enables true zero-voltage switching in bidirectional topologies without body-diode losses
Kelvin source configuration	Decouples gate loop from power loop-reducing Miller-induced false turn-on by >50% vs. standard 3-pin layout
Ultra-low Q_G/Q_OSS ratio (1.8/14 nC)	Improves switching efficiency above 300 kHz while easing gate driver thermal management
JEDEC-qualified for industrial temp range	Validated for continuous operation from –55°C to +150°C junction temperature

Applications

Server PSU Totem-Pole PFC

Datacenter LLC Resonant Converter

Use Scenario: High-efficiency front-end AC–DC conversion in 3–6 kW rack-mounted PSUs using interleaved totem-pole topology.

IC Role / Device Role / Timing Role: Fast-switching high-side GaN switch operating at 100–200 kHz with synchronous rectification capability.

Use Value: Achieves >99% PFC efficiency at full load by eliminating Si MOSFET body-diode conduction loss and reducing switching energy by 40%.

Use Scenario: Isolated DC–DC stage in AI accelerator power supplies requiring 12 V or 48 V output at >100 A.

IC Role / Device Role / Timing Role: Primary-side half-bridge switch in high-frequency LLC resonant converter running at 500 kHz–1 MHz.

Use Value: Enables smaller magnetics and capacitors due to reduced EMI and tighter ZVS window enabled by precise Q_OSS control.

Industrial Motor Drive Inverter

EV On-Board Charger (OBC) PFC Stage

Use Scenario: Compact 7.5–15 kW variable-frequency drives for HVAC and pump systems with active cooling constraints.

IC Role / Device Role / Timing Role: 650 V bridge leg switch supporting 10–20 kHz PWM with field-oriented control.

Use Value: Reduces heatsink volume by 35% versus silicon superjunction MOSFETs while maintaining <150°C peak junction temperature.

Use Scenario: Bidirectional 11 kW OBC with combined AC/DC and DC/AC functionality for V2G applications.

IC Role / Device Role / Timing Role: Dual-role switch performing PFC and inverter functions via software-controlled conduction direction.

Use Value: Eliminates need for separate SiC diodes or dual-MOSFET anti-parallel arrangements-cutting BOM count and layout area by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
GS66508T (GaN Systems)	650 V, 130 mΩ, no Kelvin source, higher Q_G (3.2 nC), larger 5×6 mm PQFN package	Lacks dedicated Kelvin source-requires careful gate loop layout to mitigate dV/dt coupling	Preferred where board space permits larger footprint and gate drive design accommodates higher Q_G
TPH3205WS (Transphorm)	650 V, 150 mΩ, Kelvin source present, higher R_DS(on), lower Q_OSS (10 nC)	Better suited for ZVS-critical designs needing minimal output capacitance energy	Select when optimizing for lowest possible switching loss at expense of slightly higher conduction loss

Compared with GS66508T and TPH3205WS, IGLR65R140D2XUMA1 offers the optimal balance of low R_DS(on), integrated Kelvin source, and industry-leading Q_OSS/Q_G ratio-making it the preferred choice for thermally constrained, high-frequency industrial and datacenter power stages requiring production-grade reliability.

Availability

IGLR65R140D2XUMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, and EV on-board chargers requiring stable component supply, JEDEC-qualified industrial reliability, and consistent parametric performance across production lots.

Supply support for IGLR65R140D2XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors-with over 30 years of high-reliability component manufacturing heritage.

This part belongs to the CoolGaN™ G5 product line, engineered specifically for high-frequency, high-efficiency power conversion in datacenter, telecom, and industrial SMPS-where minimizing switching loss and thermal footprint is paramount.

FAQ

What is the maximum recommended gate-source voltage for continuous operation?

The absolute maximum continuous gate-source voltage is ±10 V, with pulsed rating up to ±25 V for ≤50 ns. Operation within –5 V to +6 V is recommended for long-term reliability and threshold stability. Exceeding +6 V increases gate oxide stress and accelerates parameter drift over lifetime.

Does IGLR65R140D2XUMA1 require negative gate drive for robust turn-off?

No-negative gate drive is not required. The device features a robust 1.2 V typical gate threshold and stable enhancement-mode behavior. However, a small negative offset (–2 to –3 V) during turn-off improves noise immunity in high-dV/dt environments and is recommended for >100 kHz hard-switching applications.

How does the Kelvin source (Pin 3) connect in a typical gate driver layout?

Pin 3 must be routed directly to the gate driver IC's source/ground pin with minimal trace length (<2 mm) and no shared vias or planes. It must remain isolated from the main source (Pins 1–2) except at the PCB's single-point ground star near the heatsink mounting area-ensuring gate loop inductance stays below 1 nH for stable 100+ V/ns edge rates.

Can this GaN transistor replace silicon MOSFETs in existing 650 V designs without layout changes?

Direct replacement is not advised without revision. While pin-compatible with some TO-220 or DPAK layouts, the PG-TSON-8 package demands updated thermal pads, Kelvin source routing, and gate loop optimization. Also, gate drive strength and dead-time settings must be revalidated due to faster switching and absence of reverse recovery.

IGLR65R140D2XUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 1.8 nC @ 3 V

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 155 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSON-8-8

IGLR65R140D2XUMA1 FAQ

1.How can I place an order for IGLR65R140D2XUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGLR65R140D2XUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGLR65R140D2XUMA1 reliable?

The price and inventory of IGLR65R140D2XUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGLR65R140D2XUMA1 is usually 5 days.

3.What payment methods are accepted for IGLR65R140D2XUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGLR65R140D2XUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGLR65R140D2XUMA1?

IGLR65R140D2XUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGLR65R140D2XUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGLR65R140D2XUMA1?

For technical support, including IGLR65R140D2XUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGLR65R140D2XUMA1 requirements.

6.How does Aetrix verify that IGLR65R140D2XUMA1 is sourced from the original manufacturer or authorized distributors?

All IGLR65R140D2XUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGLR65R140D2XUMA1 meets industry standards.

7.What is the process for return or replacement of IGLR65R140D2XUMA1?

All IGLR65R140D2XUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGLR65R140D2XUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGLR65R140D2XUMA1 part is unused and in its original packaging.

Return procedure for IGLR65R140D2XUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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