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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IGLR65R200D2XUMA1

Name: IGLR65R200D2XUMA1
Brand: Infineon Technologies
SKU: IGLR65R200D2XUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGLR65R200D2XUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IGLR65R200D2XUMA1.pdf

Description:: IGLR65R200D2XUMA1

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Product details

Overview

IGLR65R200D2XUMA1 from Infineon is a 650 V enhancement-mode gallium nitride (GaN) power transistor in PG-TSON-8 package, with R_DS(on) = 200 mΩ (typ), Q_G = 1.26 nC, Q_oss = 15 pF, and rated for 9.2 A continuous drain current at T_j = 25°C. It serves as a high-frequency, high-efficiency switching device in hard- and soft-switching topologies including totem-pole PFC and LLC resonant converters.

For engineers reviewing the IGLR65R200D2XUMA1 datasheet, IGLR65R200D2XUMA1 pinout, IGLR65R200D2XUMA1 application, or IGLR65R200D2XUMA1 equivalent, key selection criteria include its 200 mΩ on-resistance, 9.6 nC output charge at 400 V, ultra-low reverse recovery charge (Q_rr = 0 nC), Kelvin source configuration, and JEDEC-qualified industrial reliability.

Technical Context

This CoolGaN™ G5 transistor employs normally-off GaN-on-silicon technology with integrated gate protection diode and Kelvin source terminal for precise gate control. Its dynamic characteristics-C_iss = 91 pF, C_rss = 0.21 pF, and t_f = 28 ns-enable MHz-range switching while maintaining low EMI and commutation losses.

The device features a dedicated Kelvin source (Pin 3) separate from power source (Pins 1–2), enabling accurate gate drive referencing and eliminating source inductance-induced oscillation. Its 2 kV HBM ESD rating and 150°C maximum junction temperature support robust operation in thermally constrained industrial and datacenter SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	650 V - supports 700 V DC bus systems with 750 V surge capability for reliable operation in high-voltage PFC stages
R_DS(on),typ	200 mΩ - enables low conduction loss at 7.1 mA gate drive, critical for efficiency in 10–30 kW server PSUs
Q_G	1.26 nC - reduces gate driver power demand and allows use of compact, low-cost gate drivers
Q_oss@400 V	15 pF - minimizes turn-off energy loss and improves light-load efficiency in LLC converters
I_D,pulse	16 A - supports peak current handling in transient overload conditions without derating
T_j,max	150°C - permits operation in sealed, fanless enclosures common in telecom rectifiers and industrial adapters
dv/dt rating	200 V/ns - ensures noise immunity and stable switching in fast-rising voltage environments

Pinout & Package

IGLR65R200D2XUMA1 uses the PG-TSON-8 surface-mount package with exposed thermal pad (source-connected), optimized for high-power density layouts and efficient PCB heat spreading.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1–2 (Source)	Main power source terminal	Carries full load current; connected to PCB copper pour for thermal dissipation
Pin 3 (Kelvin Source)	Reference return for gate drive loop	Isolates gate control path from power source inductance, preventing false turn-off during high di/dt
Pin 4 (Gate)	Control input	Receives gate voltage (±10 V continuous); internal clamping limits negative swing to –8 V
Pin 5 (Drain)	High-side power output	Connects to DC bus or transformer primary; rated for 650 V continuous and 900 V transient

Key Features

Feature	Design Value
Enhancement-mode GaN	Ensures fail-safe operation: zero current flow with no gate bias, eliminating external pull-down requirements
No reverse-recovery charge (Q_rr = 0 nC)	Eliminates body diode losses in synchronous rectification and bidirectional topologies like totem-pole PFC
Kelvin source configuration	Enables precise gate-source voltage regulation under high di/dt, improving switching consistency and reducing overshoot
2 kV HBM ESD rating	Reduces need for external ESD protection during assembly and field operation in automated manufacturing lines
JEDEC-qualified for industrial use	Validated for 150°C continuous operation and 1 million pulse surge stress, supporting 10+ year field life

Applications

Server PSU Totem-Pole PFC

Datacenter LLC Resonant Converter

Use Scenario: High-density 3–10 kW AC-DC front-end with >98% efficiency target and <15 mm height constraint.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole PFC stage operating at 100–300 kHz.

Use Value: 200 mΩ R_DS(on) and 9.6 nC Q_oss reduce conduction + switching losses by 22% vs. Si MOSFET equivalents, enabling smaller heatsinks.

Use Scenario: Secondary-side regulated 48 V output LLC converter in AI accelerator racks requiring <100 μs transient response.

IC Role / Device Role / Timing Role: Primary-side half-bridge switch operating at 500 kHz–1 MHz with ZVS.

Use Value: Zero Q_rr and 28 ns fall time enable clean ZVS turn-on across full load range, minimizing dead-time loss and audible noise.

Industrial 5G Telecom Rectifier

Ultra-Compact Laptop Adapter

Use Scenario: Outdoor base station rectifier operating at –40°C to +85°C ambient with forced-air cooling.

IC Role / Device Role / Timing Role: Main switching element in phase-shifted full-bridge topology delivering 1200 W @ 54 V.

Use Value: 150°C T_j,max and 3.7 °C/W R_thJC allow full-rated power at 85°C case temperature without derating.

Use Scenario: 100 W GaN-based adapter achieving 30 W/in³ power density and USB PD 3.1 compliance.

IC Role / Device Role / Timing Role: Single-ended flyback switch operating at 750 kHz with valley switching.

Use Value: PG-TSON-8 footprint and 1.26 nC Q_G permit integration of gate driver + controller in <12 mm² area, meeting UL62368 creepage requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TPH3205WS	650 V Si MOSFET, R_DS(on) = 320 mΩ, Q_G = 11.5 nC, no Kelvin source	Limited to ≤150 kHz due to higher Q_rr and slower switching; requires larger gate driver	Select when cost sensitivity outweighs efficiency targets and board space is unconstrained
GS66508T	650 V GaN, R_DS(on) = 150 mΩ, Q_G = 2.2 nC, same PG-TSON-8 but no integrated gate diode	Higher gate charge increases driver loss; lacks internal GS clamp, requiring external protection	Select when lower R_DS(on) justifies added gate drive complexity and BOM count

Compared with TPH3205WS and GS66508T, IGLR65R200D2XUMA1 delivers optimal balance of low Q_G, integrated protection, and Kelvin source-making it preferred for high-volume, thermally demanding, and layout-sensitive 650 V GaN designs where reliability and ease of implementation are prioritized.

Availability

IGLR65R200D2XUMA1 is available at Aetrix Electronics and suitable for server PSU totem-pole PFC, datacenter LLC resonant converters, and industrial 5G telecom rectifiers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IGLR65R200D2XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and wafer fabrication facilities.

This part belongs to the CoolGaN™ G5 product line, engineered specifically for high-frequency, high-efficiency 650 V power conversion in datacenter, telecom, and industrial SMPS-emphasizing ruggedness, manufacturability, and system-level miniaturization.

FAQ

What is the purpose of the Kelvin source (Pin 3) on IGLR65R200D2XUMA1?

Pin 3 provides a dedicated low-inductance return path for the gate drive circuit, decoupling gate loop impedance from main source current paths. This prevents voltage spikes across source inductance during high di/dt switching, ensuring stable V_GS control and eliminating false turn-off events in high-frequency hard-switching applications.

Does IGLR65R200D2XUMA1 require negative gate voltage for reliable turn-off?

No. The device operates as an enhancement-mode transistor with V_GS(th) = 0.9–1.6 V and is fully specified for 0 V to +6 V gate drive. Its internal gate-source clamp limits negative transients to –8 V, making external negative bias unnecessary-simplifying driver design and reducing component count.

How does the 0 nC reverse recovery charge (Q_rr) impact totem-pole PFC performance?

Zero Q_rr eliminates reverse recovery losses and associated voltage overshoot during body-diode conduction in the low-side switch position. This enables true ZVS across full load range, reduces EMI generation, and allows higher switching frequencies without efficiency penalty-critical for meeting 80 PLUS Titanium efficiency requirements.

Can IGLR65R200D2XUMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) and matched dynamic parameters (C_iss, C_rss, Q_G) support current sharing in paralleled operation. However, strict layout symmetry (equal gate and source loop inductances) and individual gate resistors are required to ensure balanced dynamic current distribution and avoid oscillation.

IGLR65R200D2XUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 9.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 710µA

Gate Charge (Qg) (Max) @ Vgs:: 1.26 nC @ 3 V

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 91 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSON-8-8

IGLR65R200D2XUMA1 FAQ

1.How can I place an order for IGLR65R200D2XUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGLR65R200D2XUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGLR65R200D2XUMA1 reliable?

The price and inventory of IGLR65R200D2XUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGLR65R200D2XUMA1 is usually 5 days.

3.What payment methods are accepted for IGLR65R200D2XUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGLR65R200D2XUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGLR65R200D2XUMA1?

IGLR65R200D2XUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGLR65R200D2XUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGLR65R200D2XUMA1?

For technical support, including IGLR65R200D2XUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGLR65R200D2XUMA1 requirements.

6.How does Aetrix verify that IGLR65R200D2XUMA1 is sourced from the original manufacturer or authorized distributors?

All IGLR65R200D2XUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGLR65R200D2XUMA1 meets industry standards.

7.What is the process for return or replacement of IGLR65R200D2XUMA1?

All IGLR65R200D2XUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGLR65R200D2XUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGLR65R200D2XUMA1 part is unused and in its original packaging.

Return procedure for IGLR65R200D2XUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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