Infineon Technologies IGLR65R270D2XUMA1

Overview

IGLR65R270D2XUMA1 from Infineon is a 650 V enhancement-mode gallium nitride (GaN) power transistor in PG-TSON-8 package, featuring R_DS(on) = 270 mΩ (typ), Q_G = 1 nC, and Q_oss = 7.8 nC @ 400 V. It delivers ultra-fast switching with zero reverse-recovery charge and supports hard/soft-switching topologies in high-frequency SMPS. Used in totem-pole PFC and LLC resonant converters for datacenter and telecom power supplies.

For engineers reviewing the IGLR65R270D2XUMA1 datasheet, IGLR65R270D2XUMA1 pinout, IGLR65R270D2XUMA1 application, or IGLR65R270D2XUMA1 equivalent, key selection criteria include its 650 V V_DS,max, Kelvin-source configuration for gate drive stability, low output charge enabling >1 MHz operation, and JEDEC-qualified industrial reliability.

Technical Context

This CoolGaN™ G5 device uses lateral GaN-on-Si technology with integrated Kelvin source terminal to decouple power and signal return paths-critical for minimizing gate loop inductance and suppressing oscillation during dV/dt >200 V/ns transitions. Its normally-off operation relies on a recessed gate structure with V_GS(th) = 0.9–1.6 V and gate clamping at –8 V.

The transistor exhibits no body diode reverse recovery (Q_rr = 0 nC), enabling bidirectional conduction without commutation loss. Its C_oss,er = 14 pF and C_oss,tr = 19 pF reflect energy- and time-based capacitance models optimized for soft-switching design and ZVS timing prediction in half-bridge configurations.

Key Specifications

Pinout & Package

PG-TSON-8 is a thermally optimized 8-pin leadless package with exposed drain pad (Pin 5–8) for low-inductance, high-current routing and improved thermal transfer. The Kelvin source (Pin 3) separates gate return path from power source (Pins 1–2), reducing gate voltage error under high di/dt.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage GaN transistor applications.

Compared with GAN063-650WSBDA and TPH3205WS, IGLR65R270D2XUMA1 offers superior switching speed (7 ns t_d(on)), lower R_DS(on), and Kelvin-source stability-making it optimal for high-density, high-frequency designs where layout-induced oscillation must be avoided.

Availability

IGLR65R270D2XUMA1 is available at Aetrix Electronics and suitable for server power supplies, 5G telecom rectifiers, and industrial AC-DC adapters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IGLR65R270D2XUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolGaN™ G5 product line-designed specifically for high-frequency, high-efficiency power conversion in datacenter, telecom, and industrial SMPS where silicon limitations in speed and loss are critical.

FAQ

What is the maximum recommended gate resistor value for stable switching?

Infineon recommends R_G ≤ 27 Ω for turn-on and turn-off to maintain gate voltage integrity under dV/dt stress. Higher values increase switching time and risk of false triggering due to Miller coupling; lower values may exceed the 4.2 mA continuous gate current rating. Layout inductance must be minimized regardless of R_G value.

Does IGLR65R270D2XUMA1 require negative gate voltage for reliable turn-off?

No. The device operates reliably with 0 V to +6 V gate drive. Negative gate voltage is not required, though V_GS,pulse down to –25 V is rated for transient immunity. Gate clamping at –8 V protects against accidental negative spikes, but standard 0–6 V drive suffices for all normal operation.

How is thermal performance affected by PCB copper area for the drain pad?

With 6 cm² of 70 μm copper on FR4, R_thJA drops to 74 °C/W. Reducing copper area below 4 cm² increases junction-to-ambient resistance nonlinearly-e.g., 2 cm² raises R_thJA to ~110 °C/W. The exposed drain pad must be fully soldered; voids >15% degrade thermal transfer and accelerate aging.

Can this GaN transistor replace a silicon MOSFET in an existing design without layout changes?

No. Direct replacement requires redesign: Kelvin source routing, shorter gate loops, tighter gate drive impedance matching, and verification of dV/dt immunity in adjacent traces. The absence of reverse recovery simplifies dead-time tuning but demands updated gate driver timing and snubber optimization for the faster edges.