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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IGO60R070D1AUMA2

Name: IGO60R070D1AUMA2
Brand: Infineon Technologies
SKU: IGO60R070D1AUMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGO60R070D1AUMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 20-PowerSOIC (0.433", 11.00mm Width)

Datasheet:: IGO60R070D1AUMA2.pdf

Description:: GAN HV

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Product details

Overview

IGO60R070D1AUMA2 from Infineon is a 600 V, 70 mΩ enhancement-mode GaN power transistor in PG-DSO-20-85 package, designed as a normally-off high-frequency switching device for hard- and soft-switching topologies. It delivers 60 A pulsed drain current, 5.8 nC gate charge, zero reverse recovery charge (Qrr = 0 nC), and supports 400 V output charge (Qoss = 41 nC), enabling high-efficiency totem-pole PFC and LLC resonant converters in datacenter SMPS.

For engineers reviewing the IGO60R070D1AUMA2 datasheet, IGO60R070D1AUMA2 pinout, IGO60R070D1AUMA2 application, or IGO60R070D1AUMA2 equivalent, key selection criteria include its GaN-specific gate drive requirements (VGS(th) = 0.9–1.6 V), Kelvin source configuration for low-inductance switching, ultra-low Qrr for reduced commutation loss, and industrial qualification per JESD47/JESD22.

Technical Context

This CoolGaN™ transistor uses enhancement-mode gallium nitride on silicon technology with integrated gate driver compatibility. Its architecture eliminates body diode reverse recovery, enabling true zero-voltage switching in totem-pole PFC and reducing EMI generation during turn-off transitions.

The device features a split-source layout with dedicated Kelvin source pins (pins 8, 11, 12, 19, 20) for precise gate control, and a heatslug-isolated drain-source structure (pins 9, 10, 13–18) optimized for high dV/dt immunity (200 V/ns) and thermal robustness (RthJC = 1 °C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	600 V - Maximum blocking voltage for 400 V DC bus designs with 25% margin
R_DS(on),max	70 mΩ - On-resistance at Tj = 25 °C; defines conduction loss in continuous 8 A operation
Q_G,typ	5.8 nC - Low gate charge enables fast switching with minimal driver power consumption
Q_oss @ 400 V	41 nC - Output charge determines energy loss during hard-switched turn-on
Q_rr	0 nC - Zero reverse recovery charge eliminates tail current and associated losses
I_D,pulse	60 A - Peak pulsed current capability supports short-duration overload conditions
dV/dt rating	200 V/ns - High slew-rate immunity ensures reliable operation in fast-switching topologies

Pinout & Package

Package: PG-DSO-20-85 - 20-pin thermally enhanced DSO with isolated heatslug (not electrically connected), optimized for high-power density PCB layouts and forced-air cooling.

Pin/Terminal	Circuit Role	Design Meaning
1–7, 8	Source	Main source connection; pin 8 is Kelvin source for gate loop decoupling
9, 10	Drain	Primary drain terminals; low-inductance parallel path for high-current conduction
11, 12, 19, 20	Kelvin Source	Dedicated low-noise source reference for gate driver feedback; minimizes Miller-induced false turn-on
13–18	Drain	Additional drain terminals; distributed layout reduces current crowding and thermal hotspots
1	Gate	Single gate input; requires negative turn-off bias (–10 V max) for robustness

Key Features

Feature	Design Value
Enhancement-mode operation	Normally-off behavior (V_GS(th) = 0.9–1.6 V) ensures intrinsic safety during gate drive failure
Ultra-low Q_rr	0 nC eliminates reverse recovery loss and associated snubber design complexity
Kelvin source configuration	Separate high-side source sensing enables stable high-frequency switching up to 1 MHz
Industrial qualification	JESD47/JESD22 compliance guarantees reliability under extended temperature cycling and humidity exposure
Low C_iss/C_oss ratio	C_iss = 380 pF, C_oss = 72 pF - improves controllability and reduces gate drive loss

Applications

Totem-Pole PFC

High-Frequency LLC Resonant Converter

Use Scenario: 3.3 kW server front-end rectifier operating at 500 kHz switching frequency with bidirectional conduction requirement.

IC Role / Device Role / Timing Role: High-side GaN switch in interleaved totem-pole topology; handles AC line synchronization and reactive power management.

Use Value: Zero Q_rr enables full-range ZVS across light-to-full load, improving efficiency by ≥1.2% at 50% load vs. Si MOSFETs.

Use Scenario: 1.5 kW telecom PSU using asymmetric half-bridge LLC with variable frequency control.

IC Role / Device Role / Timing Role: Primary-side switching transistor; operates in resonant mode with precise dead-time control enabled by fast turn-on/turn-off (t_d(on) = 10 ns, t_d(off) = 14 ns).

Use Value: 5.8 nC Q_G reduces gate driver power by 40% versus comparable 650 V SiC devices, lowering thermal load on auxiliary supply.

Industrial Motor Drive Inverter Stage

48 V–400 V DC-DC Isolated Bidirectional Converter

Use Scenario: 7.5 kW servo drive inverter stage requiring >99% efficiency and <500 ns dead-time precision.

IC Role / Device Role / Timing Role: Upper-leg switching device in three-phase bridge; leverages reverse conduction capability (V_SD = 2.2 V) for synchronous rectification during freewheeling.

Use Value: Kelvin source pins suppress gate oscillation during high dV/dt commutation (200 V/ns), eliminating need for external ferrite beads.

Use Scenario: Energy storage system bi-directional DC-DC converter with 48 V battery and 400 V bus, operating at 300 kHz.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge topology; conducts forward and reverse current with matched R_DS(on) in both directions.

Use Value: Symmetrical conduction (I_S,pulse = 60 A reverse) eliminates body diode penalty, enabling 98.3% peak efficiency at 20 kHz–1 MHz variable frequency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency GaN power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TPH3205WS	650 V Si MOSFET; R_DS(on) = 55 mΩ; Q_rr = 120 nC; no Kelvin source	Limited to ≤200 kHz due to Q_rr-induced loss; unsuitable for ZVS above 300 kHz	Select only if gate drive simplicity and cost outweigh efficiency targets >97.5%.
GAN063-650WSB	650 V GaN HEMT; R_DS(on) = 65 mΩ; Q_G = 4.9 nC; PG-HSOF-8 package with single-source pin	No Kelvin source; lower thermal resistance (0.75 °C/W) but higher Miller capacitance (Crss = 1.2 pF)	Prefer for space-constrained designs where layout-induced ringing is mitigated via layout optimization.

Compared with TPH3205WS and GAN063-650WSB, IGO60R070D1AUMA2 uniquely combines Kelvin source routing, zero Q_rr, and industrial qualification-making it the only option qualified for unattended 24/7 operation in datacenter SMPS with >500 kHz switching.

Availability

IGO60R070D1AUMA2 is available at Aetrix Electronics and suitable for high-frequency totem-pole PFC, LLC resonant converters, and industrial motor drive inverters requiring stable component supply and long-term lifecycle assurance.

Supply support for IGO60R070D1AUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolGaN™ family-designed specifically for high-efficiency, high-frequency power conversion systems where Si and SiC face switching loss or reliability limitations.

FAQ

What gate drive voltage range is required for reliable operation?

IGO60R070D1AUMA2 requires V_GS = +6 V to +10 V for turn-on and –10 V for turn-off (absolute max –25 V pulsed). The threshold voltage range (0.9–1.6 V at 25 °C) demands tight gate drive regulation to avoid partial turn-on during noise transients. Infineon recommends using an isolated gate driver with active Miller clamp and negative bias for industrial-grade robustness.

Does this device support bidirectional conduction, and how is it implemented?

Yes-IGO60R070D1AUMA2 supports reverse conduction with V_SD = 2.2 V at 8 A and I_S,pulse = 60 A. Unlike Si MOSFETs, its GaN channel conducts equally well in both directions when V_GS > V_GS(th), enabling synchronous rectification without body diode penalties. This is confirmed in Table 8 of the datasheet and validated in totem-pole PFC reference designs.

How does the Kelvin source configuration improve switching performance?

The Kelvin source (pins 8, 11, 12, 19, 20) provides a dedicated low-inductance return path for the gate driver's source node, isolating it from high-current source loops. This prevents voltage drop across PCB traces from modulating the effective V_GS, suppressing false turn-on during high dV/dt events (up to 200 V/ns) and enabling stable operation beyond 1 MHz.

Is this part suitable for automotive applications?

No-IGO60R070D1AUMA2 is qualified only for industrial applications per JESD47/JESD22. It lacks AEC-Q101 qualification, automotive-grade screening, and extended temperature validation (e.g., Tj = 175 °C). For automotive traction or OBC use, Infineon's CoolGaN™ automotive-grade variants (e.g., IGT60R070D1ATMA1) must be selected instead.

IGO60R070D1AUMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 20-PowerSOIC (0.433", 11.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-20-85

IGO60R070D1AUMA2 FAQ

1.How can I place an order for IGO60R070D1AUMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGO60R070D1AUMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGO60R070D1AUMA2 reliable?

The price and inventory of IGO60R070D1AUMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGO60R070D1AUMA2 is usually 5 days.

3.What payment methods are accepted for IGO60R070D1AUMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGO60R070D1AUMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGO60R070D1AUMA2?

IGO60R070D1AUMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGO60R070D1AUMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGO60R070D1AUMA2?

For technical support, including IGO60R070D1AUMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGO60R070D1AUMA2 requirements.

6.How does Aetrix verify that IGO60R070D1AUMA2 is sourced from the original manufacturer or authorized distributors?

All IGO60R070D1AUMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGO60R070D1AUMA2 meets industry standards.

7.What is the process for return or replacement of IGO60R070D1AUMA2?

All IGO60R070D1AUMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IGO60R070D1AUMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGO60R070D1AUMA2 part is unused and in its original packaging.

Return procedure for IGO60R070D1AUMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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