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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IGOT60R070D1AUMA1

Name: IGOT60R070D1AUMA1
Brand: Infineon Technologies
SKU: IGOT60R070D1AUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGOT60R070D1AUMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 20-PowerSOIC (0.433", 11.00mm Width)

Datasheet:: IGOT60R070D1AUMA1.pdf

Description:: GANFET N-CH 600V 31A 20DSO

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Product details

Overview

IGOT60R070D1AUMA1 from Infineon is a 600 V, 70 mΩ enhancement-mode GaN power transistor in PG-DSO-20-87 package, designed as a normally-off high-frequency switching device for hard- and soft-switching topologies. It delivers 60 A pulsed drain current, 5.8 nC gate charge, zero reverse recovery charge (Q_rr = 0 nC), and supports 400 V output charge (Q_oss = 41 nC), enabling high-efficiency totem-pole PFC and LLC resonant converters in datacenter SMPS.

For engineers reviewing the IGOT60R070D1AUMA1 datasheet, IGOT60R070D1AUMA1 pinout, IGOT60R070D1AUMA1 application, or IGOT60R070D1AUMA1 equivalent, key selection criteria include its GaN-specific gate drive requirements (V_GS(th) = 0.9–1.6 V), Kelvin source configuration for low-inductance switching, ultra-low Q_rr, and industrial qualification per JESD47/JESD22.

Technical Context

This CoolGaN™ transistor employs enhancement-mode gallium nitride-on-silicon technology with integrated gate driver compatibility, featuring a split-source (Kelvin source) pinout to minimize source inductance and suppress voltage spikes during dV/dt transients. Its zero reverse-recovery charge eliminates body-diode losses and enables bidirectional conduction without commutation failure.

The device operates with a maximum junction temperature of 150 °C, thermal resistance R_thJC of 1 °C/W, and is rated for 750 V pulsed drain-source voltage under surge conditions. Gate threshold voltage shifts from 0.9 V at 25 °C to 1.2 V at 125 °C, requiring stable gate drive bias across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	600 V - Maximum continuous blocking voltage for primary-side switching in 400 V DC bus systems
R_DS(on),max	70 mΩ - On-resistance at T_j = 25 °C, defining conduction loss in high-current totem-pole PFC stages
Q_G,typ	5.8 nC - Low gate charge enabling fast turn-on/turn-off with reduced gate driver power demand
Q_oss @ 400 V	41 nC - Output charge determining energy loss during hard-switching transitions
Q_rr	0 nC - Zero reverse recovery charge eliminating tail current and associated switching loss in bridge-leg commutation
dV/dt rating	200 V/ns - High voltage slew rate capability supporting operation in fast-switching LLC and resonant topologies
T_j,max	150 °C - Maximum junction temperature enabling high-power density thermal design with 1 °C/W R_thJC

Pinout & Package

IGOT60R070D1AUMA1 uses the PG-DSO-20-87 surface-mount package with exposed thermal pad (heatslug not connected electrically), optimized for high-current, high-frequency PCB layouts. The 20-pin layout includes dedicated Kelvin source terminals to decouple power and signal return paths.

Pin/Terminal	Circuit Role	Design Meaning
1–7, 11–12, 19–20	Source	Main power source connection; paralleled pins reduce resistance and inductance for high-current conduction
8	Kelvin Source	Low-current reference path for gate driver feedback-critical for stable V_GS control during fast dI/dt
9–10	Gate	Control input; requires low-impedance gate driver due to 0.78 Ω internal gate resistance
13–18	Drain	Main high-voltage power terminal; multiple pins minimize inductance in high-dI/dt switching nodes

Key Features

Feature	Design Value
Enhancement-mode operation	Normally-off behavior (V_GS(th) ≥ 0.9 V) ensures intrinsic safety during gate drive loss or startup
No reverse-recovery charge	Q_rr = 0 nC eliminates shoot-through risk and EMI from diode reverse recovery in half-bridge configurations
Capable of reverse conduction	V_SD = 2.2–2.5 V at 8 A enables synchronous rectification without external body diode
Ultra-fast switching	Turn-on delay = 10 ns, fall time = 15 ns - supports >1 MHz operation in resonant converters
Industrial qualification	JEDEC JESD47/JESD22 compliant - validated for 15-year reliability in telecom/datacenter power supplies

Applications

High-Frequency LLC Resonant Converter

Totem-Pole PFC Stage

Use Scenario: Primary-side switch in 500–1000 W server PSU LLC converters operating at 300–800 kHz.

IC Role / Device Role / Timing Role: High-side GaN switch controlling resonant tank current with zero-voltage switching (ZVS) capability.

Use Value: 0 nC Q_rr and 41 nC Q_oss reduce switching loss by >35% vs. Si MOSFETs, enabling >98% peak efficiency.

Use Scenario: Active switch in interleaved totem-pole PFC front-end for 3 kW AI accelerator racks.

IC Role / Device Role / Timing Role: Fast-switching leg element handling bidirectional line current with synchronous conduction.

Use Value: Reverse conduction capability (V_SD = 2.2 V) eliminates need for anti-parallel SiC diodes, reducing BOM count and layout area.

48 V Intermediate Bus Converter

Telecom Rectifier Module

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V/50 A intermediate bus converter for edge computing.

IC Role / Device Role / Timing Role: Low-side GaN switch replacing Si MOSFETs in active clamp forward topology.

Use Value: 70 mΩ R_DS(on) and 5.8 nC Q_G cut conduction + gate loss by 28%, improving full-load efficiency to 96.2%.

Use Scenario: Primary switch in 3 kW telecom rectifier modules with 380–400 V DC output and 96% efficiency target.

IC Role / Device Role / Timing Role: Hard-switched high-voltage switch in phase-shifted full-bridge configuration.

Use Value: 200 V/ns dV/dt rating and Kelvin source enable stable operation under 100 kV/μs common-mode noise in telecom base stations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar GaN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
GAN063-650WSBDA	650 V, 65 mΩ, 6.2 nC Q_G, TO-247-4L package with integrated driver	Higher voltage margin but larger footprint; requires external gate driver IC	Preferred for designs needing higher V_DS margin and simpler gate drive interface
TPH3205WS	600 V, 55 mΩ, 11.5 nC Q_G, TO-220AB package; SiC MOSFET, not GaN	Higher Q_G limits max frequency; exhibits measurable Q_rr (~15 nC)	Suitable where cost sensitivity outweighs ultra-high-frequency performance needs

Compared with GAN063-650WSBDA and TPH3205WS, IGOT60R070D1AUMA1 offers lowest Q_rr (0 nC) and smallest Q_G among the three, making it optimal for >500 kHz totem-pole PFC and LLC where switching loss dominates system efficiency.

Availability

IGOT60R070D1AUMA1 is available at Aetrix Electronics and suitable for high-frequency LLC resonant converters, totem-pole PFC stages, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IGOT60R070D1AUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolGaN™ product line, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial SMPS where silicon limitations in speed and loss are critical.

FAQ

What gate drive voltage is required for reliable operation?

IGOT60R070D1AUMA1 requires a nominal gate drive of +6 V to +7 V for full enhancement, with absolute maximum V_GS = 10 V. Gate threshold ranges from 0.9 V (25 °C) to 1.2 V (125 °C); undershoot must be limited to –25 V (pulsed) and –10 V (continuous) to avoid gate oxide stress.

Is a negative gate voltage needed during turn-off?

No negative gate voltage is required for safe turn-off due to its enhancement-mode GaN structure and robust gate oxide. However, applying –2 V to –3 V improves noise immunity in high-dV/dt environments and reduces Miller-induced false turn-on risk in half-bridge configurations.

How does the Kelvin source pin improve performance?

The Kelvin source (Pin 8) provides a dedicated low-current return path for the gate driver's source reference, isolating it from high-current source loop inductance. This prevents V_GS distortion during fast dI/dt events, ensuring precise gate control and preventing oscillation or premature turn-off.

Can this device replace silicon MOSFETs directly in existing PCB layouts?

No direct drop-in replacement is possible due to different pinout (PG-DSO-20-87 vs. TO-220/TO-247), Kelvin source requirement, and stricter gate drive timing. Layout redesign is mandatory to accommodate split-source routing, low-inductance gate loops, and thermal pad isolation per Infineon's mounting guidelines.

IGOT60R070D1AUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 20-PowerSOIC (0.433", 11.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-20-87

IGOT60R070D1AUMA1 FAQ

1.How can I place an order for IGOT60R070D1AUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGOT60R070D1AUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGOT60R070D1AUMA1 reliable?

The price and inventory of IGOT60R070D1AUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGOT60R070D1AUMA1 is usually 5 days.

3.What payment methods are accepted for IGOT60R070D1AUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGOT60R070D1AUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGOT60R070D1AUMA1?

IGOT60R070D1AUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGOT60R070D1AUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGOT60R070D1AUMA1?

For technical support, including IGOT60R070D1AUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGOT60R070D1AUMA1 requirements.

6.How does Aetrix verify that IGOT60R070D1AUMA1 is sourced from the original manufacturer or authorized distributors?

All IGOT60R070D1AUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGOT60R070D1AUMA1 meets industry standards.

7.What is the process for return or replacement of IGOT60R070D1AUMA1?

All IGOT60R070D1AUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGOT60R070D1AUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGOT60R070D1AUMA1 part is unused and in its original packaging.

Return procedure for IGOT60R070D1AUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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