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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IGT60R070D1ATMA1

Name: IGT60R070D1ATMA1
Brand: Infineon Technologies
SKU: IGT60R070D1ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IGT60R070D1ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSFN

Datasheet:: IGT60R070D1ATMA1.pdf

Description:: GANFET N-CH 600V 31A 8HSOF

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IGT60R070D1ATMA1 from Infineon is a 600 V, 70 mΩ enhancement-mode GaN power transistor in PG-HSOF-8-3 package, featuring zero reverse-recovery charge (Q_rr = 0 nC), 5.8 nC typical gate charge, and 60 A pulsed drain current. It serves as a high-frequency, normally-OFF switching device in hard- and soft-switching topologies including totem-pole PFC and LLC resonant converters.

For engineers reviewing the IGT60R070D1ATMA1 datasheet, IGT60R070D1ATMA1 pinout, IGT60R070D1ATMA1 application, or IGT60R070D1ATMA1 equivalent, key selection criteria include its Kelvin-source configuration for gate-drive stability, ultra-low output charge (Q_oss = 41 nC @ 400 V), and industrial qualification per JEDEC JESD47/JESD22.

Technical Context

This CoolGaN™ transistor employs a lateral enhancement-mode GaN-on-Si structure with integrated Kelvin source terminal to decouple power and signal return paths-enabling precise gate control under high dV/dt (200 V/ns) and minimizing dynamic R_DS(on) rise. Its zero Q_rr eliminates body-diode losses and commutation ringing in bridge-leg configurations.

The device operates with V_GS(th) of 0.9–1.6 V (25 °C), supports gate drive up to ±10 V continuous and ±25 V pulsed, and delivers stable R_DS(on) ≤ 70 mΩ across –55 °C to 150 °C junction temperature, validated for industrial SMPS where efficiency, power density, and EMI reduction are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS,max	600 V - Withstands DC bus voltages up to 400 V in totem-pole PFC with 50% margin
R_DS(on),max	70 mΩ - Enables <1.5 W conduction loss at 8 A, supporting compact heatsink design
Q_G,typ	5.8 nC - Reduces gate driver power demand and enables >1 MHz switching without excessive loss
Q_oss @ 400 V	41 nC - Low stored energy minimizes turn-off loss and improves ZVS capability in LLC
Q_rr	0 nC - Eliminates reverse recovery loss and associated voltage overshoot in half-bridge freewheeling
dV/dt rating	200 V/ns - Supports robust operation in high-slew-rate hard-switched converters
T_j,max	150 °C - Rated for continuous industrial ambient conditions up to 100 °C case temperature

Pinout & Package

Package: PG-HSOF-8-3 - Surface-mount, thermally enhanced 8-pin package with isolated Kelvin source terminal and dual drain pads for low-inductance, high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,4,5,6 - Drain	Main power drain connection	Parallel drain terminals reduce current density and thermal resistance (R_thJC = 1 °C/W)
7 - Source	Power source return path	High-current source node tied to PCB ground plane; handles full load current
8 - Gate	Control input	Standard MOS-compatible gate interface; requires <±10 V drive with <20 mA avg. current
SK - Kelvin Source	Reference for gate drive loop	Isolated low-current sense path ensures accurate V_GS control during fast switching, suppressing gate oscillation

Key Features

Feature	Design Value
Enhancement-mode GaN	Normally-OFF operation eliminates external bias circuitry and improves system safety
Kelvin source configuration	Separates power and signal return paths to maintain gate control integrity under >100 A/μs di/dt
Zero reverse-recovery charge	Enables bidirectional conduction without shoot-through risk in synchronous rectification
Industrial qualification	Validated per JEDEC JESD47 stress testing and JESD22 reliability standards for 10+ year field life
Low Q_oss/Q_G ratio	7.07 - Optimized for high-frequency ZVS/ZCS topologies with minimal switching loss trade-off

Applications

Totem-Pole PFC

High-Frequency LLC Resonant Converter

Use Scenario: 3.3 kW server PSU with active clamp and digital control operating at 150–300 kHz.

IC Role / Device Role / Timing Role: High-side switch in interleaved totem-pole bridge; handles AC line rectification and reactive power control.

Use Value: Zero Q_rr eliminates body-diode conduction loss and allows true bidirectional switching, improving efficiency by ≥0.5% at full load.

Use Scenario: 1.5 kW telecom rectifier using asymmetric half-bridge LLC with variable frequency control.

IC Role / Device Role / Timing Role: Primary-side high-frequency switch; operates at 500 kHz–1 MHz with ZVS over 90% load range.

Use Value: Ultra-low Q_oss (41 nC) and fast turn-off (t_f = 15 ns) enable reliable ZVS down to light load, reducing no-load consumption.

Industrial Motor Drive Inverter Stage

48 V–600 V DC-DC Isolated Bidirectional Converter

Use Scenario: 7.5 kW servo drive with three-phase inverter stage and SiC/GaN hybrid gate drivers.

IC Role / Device Role / Timing Role: Phase-leg upper switch; commutates 20–40 kHz PWM with <100 ns dead-time requirements.

Use Value: Kelvin source and 200 V/ns dV/dt rating prevent false turn-on during cross-conduction, enabling tighter dead-time optimization.

Use Scenario: Energy storage system bi-directional DC-DC with 48 V battery and 400 V HV bus, operating in both buck and boost modes.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-active-bridge topology; conducts reverse current during boost mode.

Use Value: Capable of controlled reverse conduction (V_SD = 2.2 V @ 8 A) with no reverse recovery, enabling efficient bidirectional power transfer without body-diode penalty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency GaN power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
TPH3205WS	650 V SiC MOSFET, R_DS(on) = 55 mΩ, Q_rr = 0 nC, but higher C_iss (650 pF vs. 380 pF) and slower switching (t_f = 25 ns)	Better thermal conductivity than GaN but lower switching speed limits operation above 500 kHz	Prefer when board-level thermal management dominates over switching loss
EPC2050	65 V GaN FET, R_DS(on) = 3.4 mΩ, Q_G = 1.9 nC - not voltage-scalable to 600 V systems	Only suitable for low-voltage DC-DC; cannot replace in 400 V bus applications	Not a functional substitute - excluded from 600 V designs due to voltage rating mismatch

Compared with TPH3205WS and EPC2050, IGT60R070D1ATMA1 uniquely balances 600 V rating, sub-6 nC gate charge, and Kelvin-source layout-making it optimal for >300 kHz totem-pole and LLC topologies where gate drive fidelity and zero Q_rr are non-negotiable.

Availability

IGT60R070D1ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, telecom rectifiers, and datacenter SMPS requiring stable component supply, long-term lifecycle support, and traceable GaN sourcing.

Supply support for IGT60R070D1ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's CoolGaN™ product line-engineered specifically for high-efficiency, high-frequency power conversion in industrial and datacenter applications where Si MOSFETs and SiC reach performance limits.

FAQ

What gate drive voltage and current are required for reliable operation?

IGT60R070D1ATMA1 requires V_GS = +6 V to +10 V for full enhancement and –10 V for safe turn-off. Continuous gate current must stay ≤20 mA average, with peak pulses ≤2000 mA for ≤50 ns. The Kelvin source terminal must be routed separately from the power source to avoid gate-loop inductance-induced oscillation.

Does this GaN transistor support reverse conduction, and how is it implemented?

Yes-it supports controlled reverse conduction with V_SD = 2.2 V at 8 A and no reverse recovery charge. Unlike silicon MOSFETs, it conducts in reverse direction via the same channel, enabled by its enhancement-mode GaN structure and symmetric gate control-ideal for synchronous rectification in DAB and LLC topologies.

How does the Kelvin source terminal improve switching performance?

The dedicated SK pin provides a low-inductance reference for the gate driver's source node, isolating it from high di/dt power return paths. This prevents voltage drop across source inductance from distorting effective V_GS, ensuring consistent turn-on timing and eliminating spurious turn-on during high-speed switching in half-bridge configurations.

Is thermal derating required above 100 °C case temperature?

Yes-continuous drain current drops from 31 A at T_C = 25 °C to 14 A at T_C = 125 °C per datasheet Figure 4. Derating follows linear interpolation between points; operation beyond 125 °C case requires forced cooling or reduced duty cycle to maintain T_j ≤ 150 °C and ensure JEDEC-qualified reliability.

IGT60R070D1ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolGaN™

Package/Case:: 8-PowerSFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: GaNFET (Gallium Nitride)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 1.6V @ 2.6mA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -10V

Input Capacitance (Ciss) (Max) @ Vds:: 380 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOF-8-3

IGT60R070D1ATMA1 FAQ

1.How can I place an order for IGT60R070D1ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IGT60R070D1ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IGT60R070D1ATMA1 reliable?

The price and inventory of IGT60R070D1ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IGT60R070D1ATMA1 is usually 5 days.

3.What payment methods are accepted for IGT60R070D1ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IGT60R070D1ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IGT60R070D1ATMA1?

IGT60R070D1ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IGT60R070D1ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IGT60R070D1ATMA1?

For technical support, including IGT60R070D1ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IGT60R070D1ATMA1 requirements.

6.How does Aetrix verify that IGT60R070D1ATMA1 is sourced from the original manufacturer or authorized distributors?

All IGT60R070D1ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IGT60R070D1ATMA1 meets industry standards.

7.What is the process for return or replacement of IGT60R070D1ATMA1?

All IGT60R070D1ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IGT60R070D1ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IGT60R070D1ATMA1 part is unused and in its original packaging.

Return procedure for IGT60R070D1ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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