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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMBG120R012M2HXTMA1

Name: IMBG120R012M2HXTMA1
Brand: Infineon Technologies
SKU: IMBG120R012M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG120R012M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG120R012M2HXTMA1.pdf

Description:: SIC DISCRETE

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Product details

Overview

IMBG120R012M2HXTMA1 from Infineon is a 1200 V, 102 A silicon carbide (SiC) MOSFET in PG-TO263-7-U01 package, featuring 12.2 mΩ R_DS(on) at 18 V gate drive and 25 °C junction temperature, 2 µs short-circuit withstand time, and robust body diode for hard commutation - deployed in high-efficiency EV charging and industrial UPS power stages.

For engineers reviewing the IMBG120R012M2HXTMA1 datasheet, IMBG120R012M2HXTMA1 pinout, IMBG120R012M2HXTMA1 application, or IMBG120R012M2HXTMA1 equivalent, key selection criteria include gate threshold voltage (4.2 V typ), Kelvin source sensing capability, thermal resistance (0.19 K/W j–c), and -5 V to 18 V recommended gate drive range.

Technical Context

This CoolSiC™ G2 MOSFET uses trench-gate SiC technology with optimized charge control for low switching losses and stable operation up to 200 °C virtual junction temperature under overload. Its 7-pin TO263 package integrates a dedicated Kelvin sense contact (Pin 2) to eliminate source inductance impact on gate control.

The device supports hard-switched topologies with fast turn-on (10 ns td(on)) and turn-off (19.7 ns td(off)) delays at 25 °C, and exhibits low Crss (15 pF) and QGD (34 nC), enabling high-frequency operation above 100 kHz while maintaining low EMI and dv/dt-induced false triggering immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - supports 1000 V DC bus systems with 20% safety margin for overvoltage transients in EV chargers and string inverters.
R_DS(on)	12.2 mΩ @ 18 V, 25 °C - enables <1.2 W conduction loss at 100 A, critical for high-power density 3-phase PFC and inverter stages.
I_DC	102 A @ T_C = 100 °C - defines maximum continuous current under realistic heatsink conditions without derating.
t_SC	2 µs - allows reliable detection and shutdown during fault events in industrial UPS and motor drives.
V_GS(th)	4.2 V typ - provides clear noise margin against parasitic turn-on while ensuring robust gate drive compatibility with standard 15 V logic-level drivers.
R_th(j–c)	0.19 K/W - enables efficient heat transfer to heatsink, supporting >300 W power dissipation at 100 °C case temperature.
Q_G	124 nC - determines gate driver peak current requirement (~5 A for 25 ns rise time), guiding selection of Infineon 1EDN/1EDS families.

Pinout & Package

Package: PG-TO263-7-U01 - surface-mount, thermally enhanced 7-lead variant of TO-263 with isolated drain tab and integrated Kelvin source sense terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Main gate input; requires low-inductance routing and negative turn-off bias (-5 V) to suppress Miller-induced false turn-on.
Pin 2	Kelvin Sense Contact	Provides remote gate-source reference point, eliminating source bond wire inductance from gate loop - mandatory for stable high-dI/dt switching.
Pins 3–7	Source	Power source return path; electrically distinct from Pin 2 - interchange causes gate control failure and device destruction.
Tab	Drain	High-current drain connection; thermally coupled to die backside for optimal heat extraction via PCB copper pour or heatsink mounting.

Key Features

Feature	Design Value
XT interconnection technology	Reduces thermal resistance by 25% vs. standard Cu clip packaging, enabling higher power density and longer lifetime at 175 °C junction operation.
Robust body diode	Rated for 61.5 A reverse current at 100 °C case temperature and capable of hard commutation without external freewheeling diode in totem-pole PFC.
Short-circuit ruggedness	Guaranteed 2 µs withstand time at 800 V V_DS, allowing use in unclamped inductive switching without additional protection circuitry.
0 V turn-off capability	Enables simplified gate driver design using single-rail supplies with active pull-down, reducing BOM count and layout complexity.
Benchmark V_GS(th)	Narrow 3.5–5.1 V spread ensures consistent turn-on behavior across temperature and production lots, improving system reliability in parallel configurations.

Applications

EV Charging Station

Industrial UPS

Use Scenario: 22 kW three-phase AC/DC OBC or 150 kW liquid-cooled DC fast charger front-end rectifier stage.

IC Role / Device Role / Timing Role: High-side switch in totem-pole PFC and IGBT/SiC hybrid inverter output stage.

Use Value: 12.2 mΩ R_DS(on) and low E_on/E_off reduce conduction + switching losses by >35% vs. 650 V Si MOSFETs, enabling >99% system efficiency at full load.

Use Scenario: Online double-conversion UPS with 400 V DC link and 50–100 kVA output capacity.

IC Role / Device Role / Timing Role: Inverter bridge switch handling bidirectional energy flow between battery bank and grid-tied output.

Use Value: 200 °C overload capability and 2 µs short-circuit rating support fault ride-through during grid disturbances without forced shutdown.

String Solar Inverter

General Purpose Drive

Use Scenario: 10–25 kW string inverter DC/AC stage operating at 1000 V nominal bus voltage.

IC Role / Device Role / Timing Role: Low-side switch in three-phase NPC or T-type inverter topology with active neutral-point clamping.

Use Value: Low C_oss (176 pF) and Crss (15 pF) minimize voltage overshoot and EMI during hard commutation, easing EMI filter design and certification.

Use Scenario: 30–75 kW HVAC or pump drive with field-oriented control and regenerative braking.

IC Role / Device Role / Timing Role: Output stage switch in 2-level or 3-level inverter delivering variable frequency AC to induction motor.

Use Value: Robust body diode eliminates need for anti-parallel Si diodes, reducing component count and thermal footprint while supporting regenerative energy recovery.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0015120K	1200 V, 15 mΩ R_DS(on), TO247-4L package, no Kelvin source; higher R_DS(on) and thermal resistance (0.35 K/W).	Lacks Kelvin sensing - unsuitable for >50 kHz designs requiring precise gate control; better for cost-sensitive lower-frequency drives.	Select when gate drive simplicity outweighs switching loss optimization and board space is not constrained.
STW48N120K5	1200 V, 14.5 mΩ R_DS(on), H2PAK-7 package with Kelvin source; slightly higher Q_G (135 nC) and lower t_SC (1.5 µs).	Compatible pinout but lower short-circuit ruggedness limits use in mission-critical UPS where fault tolerance is paramount.	Prefer for solar inverters with tight EMI budgets and moderate fault-clearing requirements.

Compared with C3M0015120K and STW48N120K5, IMBG120R012M2HXTMA1 delivers lowest conduction loss, best thermal performance, and highest short-circuit immunity - making it optimal for high-reliability, high-frequency, high-power-density applications demanding long-term stability.

Availability

IMBG120R012M2HXTMA1 is available at Aetrix Electronics and suitable for EV charging stations, industrial UPS systems, and string solar inverters requiring stable component supply, long-lifecycle assurance, and traceable sourcing from Infineon's qualified production line.

Supply support for IMBG120R012M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security solutions, with global R&D and manufacturing infrastructure serving automotive, industrial, and renewable energy markets.

This part belongs to the CoolSiC™ Gen2 family - engineered specifically for high-efficiency, high-reliability power conversion in 1200 V systems where thermal management, switching speed, and ruggedness are critical design constraints.

FAQ

What gate driver voltage range is recommended for reliable operation?

Infineon specifies +15 V to +18 V turn-on and –5 V to 0 V turn-off gate voltage. Using –5 V ensures immunity to parasitic turn-on during high dV/dt transitions, especially in multi-kW totem-pole PFC. Operating outside this range risks accelerated gate oxide degradation or unintended conduction.

Can the Kelvin source pin be left unconnected?

No - Pin 2 (Kelvin sense) must be connected directly to the gate driver's source reference node. Leaving it floating or connecting it to power source pins introduces measurement error and can cause oscillation or destructive shoot-through due to uncontrolled gate voltage referencing.

Is the body diode suitable for continuous reverse conduction?

Yes - the integrated SiC body diode supports continuous reverse current up to 61.5 A at T_C = 100 °C and is rated for hard commutation. It eliminates external anti-parallel diodes in many topologies, though forward voltage (5.5 V max at 25 °C) must be accounted for in loss calculations.

What is the maximum allowable case temperature for continuous operation?

The device is rated for continuous operation at T_C = 100 °C, delivering 102 A DC current. Exceeding this requires derating per the SOA curves; transient overload up to 200 °C junction temperature is permitted for ≤100 hours cumulative, limited to 5000 cycles with ΔT ≤ 100 K.

IMBG120R012M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™ Gen 2

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 144A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 12.2mOhm @ 56.7A, 18V

Vgs(th) (Max) @ Id:: 5.1V @ 17.8mA

Gate Charge (Qg) (Max) @ Vgs:: 124 nC @ 18 V

Vgs (Max):: +23V, -10V

Input Capacitance (Ciss) (Max) @ Vds:: 4050 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 600W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

IMBG120R012M2HXTMA1 FAQ

1.How can I place an order for IMBG120R012M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG120R012M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG120R012M2HXTMA1 reliable?

The price and inventory of IMBG120R012M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG120R012M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG120R012M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG120R012M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG120R012M2HXTMA1?

IMBG120R012M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG120R012M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG120R012M2HXTMA1?

For technical support, including IMBG120R012M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG120R012M2HXTMA1 requirements.

6.How does Aetrix verify that IMBG120R012M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG120R012M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG120R012M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG120R012M2HXTMA1?

All IMBG120R012M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG120R012M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG120R012M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG120R012M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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