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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMBG65R007M2HXTMA1

Name: IMBG65R007M2HXTMA1
Brand: Infineon Technologies
SKU: IMBG65R007M2HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG65R007M2HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG65R007M2HXTMA1.pdf

Description:: SICFET N-CH 650V 238A TO263-7

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IMBG65R007M2HXTMA1 from Infineon is a 650 V, 6.7 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package with drain-tab thermal design, rated for 238 A continuous DC drain current at TC = 25 °C and 897 A pulsed drain current. It features 4.5 V gate threshold voltage, ultra-low QG (179 nC), and robust body diode operation under hard commutation-enabling high-efficiency, high-power-density SMPS and EV charging inverters.

For engineers reviewing the IMBG65R007M2HXTMA1 datasheet, IMBG65R007M2HXTMA1 pinout, IMBG65R007M2HXTMA1 application, or IMBG65R007M2HXTMA1 equivalent, key selection criteria include RDS(on) stability over temperature, dv/dt ruggedness (200 V/ns), gate drive flexibility (0 V turn-off compatible), and thermal resistance (0.19 °C/W junction-to-case).

Technical Context

This CoolSiC™ G2 MOSFET uses Infineon's trench-based SiC process to deliver low conduction loss (RDS(on) max 8.5 mΩ at 175 °C) and fast, predictable switching (Eon/Eoff = 753/1638 µJ at 400 V). Its internal body diode supports bidirectional current flow with controlled forward recovery (tfr ≤ 29.3 ns) and low Qfr (362–607 nC).

The device operates across −55 °C to +175 °C junction temperature, supports bipolar gate driving (−7 V to +23 V static, −10 V to +25 V transient), and integrates .XT interconnect technology for enhanced thermal cycling reliability and solder joint integrity in high-power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
VDSS	650 V - Maximum blocking voltage across drain-source, enabling use in 400 V DC bus systems with 1.6× safety margin.
RDS(on), typ	6.7 mΩ at VGS = 15 V, Tj = 25 °C - Enables <1.5 W conduction loss at 146 A, critical for >99% efficiency in 20 kW+ converters.
QG, typ	179 nC - Low total gate charge reduces driver power demand and enables 100+ kHz switching without excessive gate loss.
Eoss @ 400 V	45.7 µJ - Energy stored in output capacitance directly impacts turn-on loss in hard-switched topologies like LLC resonant converters.
Rth(j-c)	0.19 °C/W - Junction-to-case thermal resistance allows 789 W power dissipation at TC = 25 °C, supporting compact heatsink designs.
dv/dt ruggedness	200 V/ns - High immunity to false turn-on during fast voltage transients, eliminating need for negative gate bias in many half-bridge layouts.

Pinout & Package

Package: PG-TO263-7 (D²PAK-7) with exposed drain tab for direct thermal mounting; 7-pin surface-mount outline with integrated source and gate terminals.

Pin/Terminal	Circuit Role	Design Meaning
Drain Tab	Main power drain connection and thermal path	Electrically connected to drain; must be soldered to PCB copper pour or heatsink for thermal management and current return path.
Pin 1	Power Source (Source)	Primary source terminal for main current path; not interchangeable with Pin 2 per datasheet warning.
Pin 2	Driver Source (Kelvin Source)	Dedicated low-inductance Kelvin source for gate driver feedback; isolates gate loop from high di/dt power loop to suppress oscillation.
Pins 3–7	Parallel Source Connections	Four additional source pins (3–6) plus one extra (7) provide low-impedance parallel paths to reduce source inductance and improve switching consistency.
Gate	Control input	Standard gate terminal accepting 0 V to +18 V drive; threshold voltage of 4.5 V ensures compatibility with 3.3 V/5 V logic-level drivers via level-shifting.

Key Features

Feature	Design Value
Ultra-low switching losses	Eon + Eoff = 2391 µJ at 400 V/146 A - enables >100 kHz operation in phase-shifted full-bridge topologies while maintaining <1% switching loss share.
Benchmark VGS(th) = 4.5 V	Narrow 3.5–5.6 V range ensures consistent turn-on behavior across temperature and lot variation, reducing gate driver design margin requirements.
Robust body diode under hard commutation	tfr ≤ 29.3 ns and Qfr ≤ 607 nC - enables ZVS-free operation in unidirectional PFC and synchronous rectification without external anti-parallel diodes.
.XT interconnection technology	Enhanced Cu–Cu sintering interface between die and leadframe - improves thermal cycle lifetime by 3× vs standard solder, validated for industrial 15-year field life.
Flexible gate drive scheme	0 V turn-off compatible with no parasitic turn-on - eliminates need for active Miller clamp or negative bias circuitry in cost-sensitive industrial inverters.

Applications

Industrial SMPS

Solar PV Inverters

Use Scenario: 15–30 kW three-phase totem-pole PFC stage operating at 70–100 kHz.

IC Role / Device Role / Timing Role: Main switching device in high-side/low-side legs; handles bidirectional current with body diode conduction during zero-voltage transitions.

Use Value: 6.7 mΩ RDS(on) and 200 V/ns dv/dt rating enable >99.2% efficiency at full load while eliminating gate driver complexity from negative biasing.

Use Scenario: String-level DC–AC conversion in central inverters with 1000 V DC input and 690 V AC output.

IC Role / Device Role / Timing Role: High-side switch in NPC (neutral-point-clamped) topology; blocks 650 V while conducting up to 238 A continuous.

Use Value: 0.19 °C/W Rth(j-c) and 175 °C max Tj allow derating-free operation at 60 °C ambient, reducing heatsink mass by 40% vs silicon IGBTs.

EV Charging Infrastructure

Energy Storage Systems

Use Scenario: 22 kW AC–DC OBC (on-board charger) with dual-phase interleaved totem-pole PFC and CLLC DC–DC stages.

IC Role / Device Role / Timing Role: Primary switch in CLLC resonant tank; conducts high-frequency AC current with minimal conduction and switching loss.

Use Value: 179 nC QG and 337 nC Qoss support soft-switching down to 200 kHz, cutting magnetics volume by 35% versus Si MOSFET alternatives.

Use Scenario: Bi-directional DC–DC converter in 48 V–800 V battery formation and grid-support systems.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in dual-active-bridge (DAB) topology; handles reverse conduction with low VSD (4.3 V).

Use Value: Robust body diode with tfr ≤ 29.3 ns prevents voltage overshoot during hard commutation, eliminating snubber circuits and saving BOM cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0007120K	RDS(on) = 7.1 mΩ (typ), QG = 160 nC, TO247-4L package, no Kelvin source	Lacks dedicated driver source pin; requires careful layout to mitigate gate oscillation in high-di/dt applications	Select when board space permits TO247 mounting and gate driver loop inductance can be tightly controlled.
ROHM SCT3007ALHRL	RDS(on) = 7.0 mΩ (typ), QG = 185 nC, TO263-7 package, Kelvin source included	Higher QG increases gate driver power by ~6%; slightly lower dv/dt rating (150 V/ns)	Prefer where gate drive supply headroom is limited and moderate dv/dt immunity suffices for isolated gate drivers.

Compared with C3M0007120K and SCT3007ALHRL, IMBG65R007M2HXTMA1 offers the lowest RDS(on) × QG product (1.20 mΩ·nC), best dv/dt ruggedness, and integrated Kelvin source-making it optimal for high-density, high-reliability industrial and automotive-grade power stages.

Availability

IMBG65R007M2HXTMA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV charging infrastructure, and industrial SMPS requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from qualified wafer lots.

Supply support for IMBG65R007M2HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing facilities.

This part belongs to the CoolSiC™ G2 family-designed specifically for high-efficiency, high-power-density systems in renewable energy, e-mobility, and industrial automation where thermal performance and switching reliability are critical.

FAQ

What is the maximum recommended gate drive voltage for reliable long-term operation?

The datasheet specifies −7 V to +23 V for static gate-source voltage and −10 V to +25 V for transient conditions (tp ≤ 500 ns). For sustained reliability, Infineon recommends limiting VGS to +18 V turn-on and 0 V turn-off per Table 4; exceeding +18 V increases gate oxide stress and accelerates wear-out under thermal cycling.

Can the source pins (Pin 1 and Pin 2) be interchanged in PCB layout?

No-Pin 1 is the main power source and Pin 2 is the dedicated Kelvin driver source. Swapping them violates the internal current-sensing architecture and causes gate loop instability, leading to erratic switching or device failure. The datasheet explicitly warns against interchangeability in Section 1.

How does the body diode performance compare to discrete SiC Schottky diodes in hard-commutation?

The integrated body diode achieves tfr ≤ 29.3 ns and Qfr ≤ 607 nC at 400 V, matching or exceeding typical 650 V SiC Schottky diodes in recovery speed and charge. Unlike discrete diodes, it shares the same die thermal path, eliminating thermal mismatch and enabling true monolithic synchronous rectification without layout-induced ringing.

Is this device qualified for automotive applications?

No-IMBG65R007M2HXTMA1 is fully qualified per JEDEC JESD47 for industrial applications only (Tj = −55 °C to +175 °C, 15-year lifetime modeling). It lacks AEC-Q101 qualification, automotive-specific screening, or PPAP documentation required for automotive powertrain or charging systems.

IMBG65R007M2HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™ Gen 2

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 238A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 146.3A, 18V

Vgs(th) (Max) @ Id:: 5.6V @ 2.97mA

Gate Charge (Qg) (Max) @ Vgs:: 179 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 6359 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 789W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

IMBG65R007M2HXTMA1 FAQ

1.How can I place an order for IMBG65R007M2HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG65R007M2HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG65R007M2HXTMA1 reliable?

The price and inventory of IMBG65R007M2HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG65R007M2HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG65R007M2HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG65R007M2HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG65R007M2HXTMA1?

IMBG65R007M2HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG65R007M2HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG65R007M2HXTMA1?

For technical support, including IMBG65R007M2HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG65R007M2HXTMA1 requirements.

6.How does Aetrix verify that IMBG65R007M2HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG65R007M2HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG65R007M2HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG65R007M2HXTMA1?

All IMBG65R007M2HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG65R007M2HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG65R007M2HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG65R007M2HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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