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Infineon Technologies IMBG65R083M1HXTMA1

Name: IMBG65R083M1HXTMA1
Brand: Infineon Technologies
SKU: IMBG65R083M1HXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMBG65R083M1HXTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IMBG65R083M1HXTMA1.pdf

Description:: SILICON CARBIDE MOSFET PG-TO263-

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Product details

Overview

IMBG65R083M1HXTMA1 from Infineon is a 650 V, 83 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package with Kelvin source configuration, rated for 28 A continuous drain current at 25 °C and 175 °C junction temperature, featuring low Q_oss (44 nC @ 400 V), fast commutation-robust body diode, and compatibility with standard gate drivers. It is engineered for high-efficiency, high-power-density hard-switching topologies including telecom/server SMPS and EV charging infrastructure.

For engineers reviewing the IMBG65R083M1HXTMA1 datasheet, IMBG65R083M1HXTMA1 pinout, IMBG65R083M1HXTMA1 application, or IMBG65R083M1HXTMA1 equivalent, key selection criteria include R_DS(on) temperature stability, avalanche energy rating (95 mJ single-pulse), dv/dt ruggedness (200 V/ns), and Kelvin-source-enabled switching loss reduction in high-frequency PFC and LLC stages.

Technical Context

This CoolSiC™ M1-generation trench MOSFET employs silicon carbide substrate technology to deliver superior thermal conductivity and wide bandgap performance versus silicon counterparts. Its optimized gate oxide supports reliable operation up to T_j,max = 175 °C, while the integrated Kelvin source terminal enables precise gate drive referencing independent of power source voltage drop.

The device exhibits low reverse recovery charge (Q_frm = 54 nC) and fast forward recovery time (t_fr = 18.2 ns), enabling robust hard commutation in continuous conduction mode (CCM) PFC and bidirectional DC-DC converters. Its C_oss,er = 82 pF ensures predictable turn-off energy behavior across 0–400 V V_DS range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage suitable for 400 V AC input systems with margin for transients and ringing
R_DS(on),typ	83 mΩ @ V_GS = 18 V, I_D = 11.2 A, T_j = 25 °C - Enables low conduction loss in high-current primary-side switches
Q_G,total	18 nC @ V_DS = 400 V - Low total gate charge reduces driver power demand and enables >100 kHz switching
E_oss	6.6 μJ @ V_DS = 400 V - Energy-related output capacitance directly impacts turn-off losses in hard-switched topologies
T_j,max	175 °C - Supports compact heatsinking and operation in high-ambient environments without derating
dv/dt rating	200 V/ns - Ensures immunity to false turn-on during high-speed switching in noisy power stages
Thermal R_th(j-c)	1.19 °C/W - Enables direct mounting to heatsink with minimal thermal interface resistance for high-power dissipation

Pinout & Package

Package: PG-TO263-7 (D²PAK-7L), surface-mount with isolated drain tab, Kelvin source pin, and 7-terminal layout optimized for low-inductance high-current routing and gate loop decoupling.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power drain connection	Large copper area for thermal conduction and high-current path; electrically connected to internal SiC die drain
Pin 1	Gate	Standard gate control input; referenced to driver source (Pin 2), not power source (Pins 3–7)
Pin 2	Driver Source (Kelvin)	Reference node for gate driver IC; isolates gate loop from high di/dt power source return, reducing switching losses by ~4×
Pins 3–7	Power Source	Parallel-connected source terminals carrying main load current; must not be interchanged with Pin 2 to avoid malfunction

Key Features

Feature	Design Value
Kelvin source configuration	Enables accurate gate drive referencing, reducing effective gate resistance impact and lowering E_on by up to 4× versus non-Kelvin packages
Commutation-robust body diode	Q_frm = 54 nC and t_fr = 18.2 ns support zero-voltage switching (ZVS) initiation and reduce snubber stress in resonant topologies
High-temperature gate oxide reliability	Qualified per JEDEC JESD47 for industrial applications up to 175 °C junction temperature with no degradation in V_GS(th) or R_DS(on)
Low C_oss,er / C_oss,tr ratio	C_oss,er = 82 pF vs. C_oss,tr = 109 pF indicates favorable energy-to-time capacitance balance for soft turn-off and reduced voltage overshoot
Avalanche-rated ruggedness	Single-pulse E_AS = 95 mJ at I_D = 3.6 A confirms capability to withstand unclamped inductive switching events without failure

Applications

Telecom & Server SMPS

EV Charging Infrastructure

Use Scenario: High-frequency totem-pole PFC stage in 3.3 kW server PSU operating at 100–200 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side SiC MOSFET switch handling full line-frequency rectified current with ZVS-assisted turn-on.

Use Value: 83 mΩ R_DS(on) and 18 nC Q_G enable >98% efficiency at full load while maintaining thermal margin at 175 °C junction temperature.

Use Scenario: Output DC-DC stage in 22 kW AC/DC on-board charger for BEVs, delivering 400–800 V battery voltage.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) topology managing bidirectional power flow with hard commutation.

Use Value: 200 V/ns dv/dt rating and 54 nC Q_frm ensure reliable operation under rapid voltage reversal during phase-shift modulation.

Solar PV Inverters

Energy Storage Systems

Use Scenario: Three-level NPC inverter stage converting 1000 V DC string voltage to grid-synchronized 230/400 V AC.

IC Role / Device Role / Timing Role: Outer-leg switching device handling full DC link voltage with partial conduction duty cycle.

Use Value: 650 V V_DS rating provides 20% overvoltage margin against DC link transients, while low C_oss,er minimizes turn-off loss at 16 kHz switching frequency.

Use Scenario: Bidirectional DC-DC converter in 48 V–800 V battery formation system requiring precise current control and high reliability over 10,000+ cycles.

IC Role / Device Role / Timing Role: Isolation-stage switch enabling controlled charge/discharge with low conduction loss and repeatable avalanche tolerance.

Use Value: 95 mJ single-pulse E_AS and JEDEC-qualified industrial reliability ensure long-term field operation without gate oxide wear-out.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065065K	R_DS(on),typ = 65 mΩ, Q_G = 22 nC, TO-247-4L package, no Kelvin source	Higher conduction efficiency but higher switching loss due to lack of Kelvin source and higher Q_G	Select when lowest R_DS(on) dominates over switching loss and board space allows TO-247 mounting
IXFH60N65X2	650 V SiC planar MOSFET, R_DS(on),typ = 85 mΩ, Q_G = 25 nC, TO-247-3L, no Kelvin source	Lower dv/dt rating (150 V/ns), no commutation-robust body diode data published	Select only for lower-cost, non-hard-commutation applications where gate drive simplicity outweighs efficiency targets

Compared with C3M0065065K and IXFH60N65X2, IMBG65R083M1HXTMA1 delivers superior switching efficiency via Kelvin source and lower Q_G, better hard-switching ruggedness via 200 V/ns dv/dt and 54 nC Q_frm, and verified industrial lifetime at 175 °C-making it optimal for high-reliability, high-frequency power conversion.

Availability

IMBG65R083M1HXTMA1 is available at Aetrix Electronics and suitable for telecom/server SMPS, EV charging infrastructure, and solar PV inverters requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp.

Supply support for IMBG65R083M1HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the CoolSiC™ M1 generation of trench-based SiC MOSFETs, designed specifically for high-efficiency, high-power-density industrial and automotive power conversion systems demanding reliability at elevated junction temperatures.

FAQ

Can IMBG65R083M1HXTMA1 be driven with standard silicon MOSFET gate drivers?

Yes-its V_GS operating range (–2 V to +20 V) and gate threshold voltage (3.5–5.7 V) are compatible with industry-standard 15 V gate drivers. The Kelvin source (Pin 2) must be connected directly to the driver's source output, while power source pins (3–7) connect to the main current return path to preserve low-loss switching performance.

What is the maximum recommended gate resistor value for this device?

The datasheet specifies R_G,ext = 1.8 Ω in dynamic test conditions (V_DD = 400 V, I_D = 11.2 A). For most 100–200 kHz applications, R_G between 2.2 Ω and 4.7 Ω balances switching loss, EMI, and dv/dt stress. Lower values increase peak gate current and require careful PCB layout to avoid oscillation.

Is the drain tab electrically isolated from the package body?

Yes-the PG-TO263-7 package features an isolated drain tab with creepage and clearance compliant to IPC-9592B. The tab is the sole electrical connection to the internal SiC die drain and must be soldered to a dedicated copper pour on the PCB for thermal and electrical performance; no additional insulation is required for standard 650 V isolation requirements.

Does IMBG65R083M1HXTMA1 support parallel operation?

Yes-its positive temperature coefficient of R_DS(on) and matched dynamic parameters across production lots enable stable current sharing. Parallel use requires symmetrical PCB layout, individual gate resistors, and Kelvin source connections to each device's driver to maintain balanced switching and prevent circulating currents.

IMBG65R083M1HXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSIC™ M1

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 111mOhm @ 11.2A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 3.3mA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 18 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 624 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 126W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

IMBG65R083M1HXTMA1 FAQ

1.How can I place an order for IMBG65R083M1HXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMBG65R083M1HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMBG65R083M1HXTMA1 reliable?

The price and inventory of IMBG65R083M1HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG65R083M1HXTMA1 is usually 5 days.

3.What payment methods are accepted for IMBG65R083M1HXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG65R083M1HXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMBG65R083M1HXTMA1?

IMBG65R083M1HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMBG65R083M1HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMBG65R083M1HXTMA1?

For technical support, including IMBG65R083M1HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG65R083M1HXTMA1 requirements.

6.How does Aetrix verify that IMBG65R083M1HXTMA1 is sourced from the original manufacturer or authorized distributors?

All IMBG65R083M1HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG65R083M1HXTMA1 meets industry standards.

7.What is the process for return or replacement of IMBG65R083M1HXTMA1?

All IMBG65R083M1HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG65R083M1HXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMBG65R083M1HXTMA1 part is unused and in its original packaging.

Return procedure for IMBG65R083M1HXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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