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Infineon Technologies IMBG65R260M1HXTMA1
- Part No.:
- IMBG65R260M1HXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Datasheet:
-
IMBG65R260M1HXTMA1.pdf
- Description:
- SILICON CARBIDE MOSFET PG-TO263-
- Quantity:
- Payment:
- Shipping:
Inventory:5,294
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Product details
Overview
IMBG65R260M1HXTMA1 from Infineon is a 650 V, 260 mΩ silicon carbide (SiC) MOSFET in PG-TO263-7 package with Kelvin source configuration, rated for 19 A pulsed drain current and optimized for high-efficiency hard-switching topologies including telecom SMPS and solar PV inverters. It features 6 nC total gate charge, 22 nC output charge at 400 V, and 3.4 μJ switching energy, enabling up to 4× lower switching losses versus conventional Si MOSFETs.
For engineers reviewing the IMBG65R260M1HXTMA1 datasheet, IMBG65R260M1HXTMA1 pinout, IMBG65R260M1HXTMA1 application, or IMBG65R260M1HXTMA1 equivalent, key selection criteria include its 175 °C maximum junction temperature, 2.30 °C/W junction-to-case thermal resistance, Kelvin-source layout for gate drive stability, and JEDEC-qualified industrial reliability.
Technical Context
This CoolSiC™ M1 generation device uses trench-gate SiC technology with a robust gate oxide validated for 175 °C continuous operation and high dv/dt immunity (200 V/ns). Its body diode exhibits low forward recovery charge (33 nC) and fast commutation robustness, critical for ZVS and hard-commutated PFC stages.
The Kelvin source pin (Pin 2) separates power and driver return paths to eliminate source inductance effects on gate control, while the 650 V blocking voltage and 260 mΩ RDS(on) at 18 VGS support high-power-density designs in 400–800 V DC-link systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - Enables use in 400 V AC input rectified bus and 800 V DC-link systems without derating. |
| RDS(on), typ | 260 mΩ at VGS = 18 V, Tj = 25 °C - Delivers low conduction loss in high-current, medium-voltage applications. |
| QG, tot | 6 nC at VDS = 400 V - Supports high-frequency switching (>100 kHz) with moderate gate drive power requirements. |
| Eoss | 3.4 μJ at VDS = 400 V - Reduces turn-off energy loss and enables efficient soft-switching implementation. |
| Tj,max | 175 °C - Allows operation in thermally constrained environments such as sealed server PSUs or EV charging modules. |
| Rth(j–c) | 2.30 °C/W - Enables direct heatsink mounting with predictable thermal performance and minimal interface resistance. |
| ID,pulse | 19 A - Sustains peak currents in transient overload conditions typical of UPS and battery formation systems. |
Pinout & Package
Package: PG-TO263-7 (D²PAK-7), surface-mount with isolated drain tab, Kelvin source configuration, and RoHS-compliant lead-free finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain Tab | Main power drain connection | Large copper area for low-inductance, high-current path and primary thermal conduction to heatsink. |
| Pin 1 | Power Source | High-current source return for main power loop; carries full load current and contributes to thermal dissipation. |
| Pin 2 | Kelvin Source | Dedicated low-current sense return for gate driver; eliminates source inductance impact on switching waveform fidelity. |
| Pin 3–7 | Driver Source / Gate / NC | Pins 3–6 are internally shorted as driver source; Pin 7 is gate input; unused pins are not connected. |
Key Features
| Feature | Design Value |
|---|---|
| Kelvin source configuration | Separates power and signal source returns to suppress gate oscillation and ensure clean turn-on/turn-off under high di/dt. |
| Commutation-robust body diode | Low Qrr (33 nC) and fast tfr (16.6 ns) enable reliable hard commutation without external anti-parallel diodes. |
| JEDEC-qualified industrial reliability | Validated per JESD47 and JEP180 for 10+ year lifetime in continuous operation at Tj ≤ 150 °C. |
| Gate oxide stability at 175 °C | Guarantees stable VGS(th) and RDS(on) drift over lifetime, reducing system-level derating needs. |
| Low Ciss/Coss ratio | Ciss = 201 pF, Coss = 48 pF - Improves Miller immunity and enables simpler gate drive design in high-side configurations. |
Applications
| Telecom & Server SMPS | UPS Systems |
|---|---|
|
Use Scenario: High-frequency LLC resonant converter in 3 kW telecom rectifier with 48 V output. IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–300 kHz with zero-voltage switching. Use Value: 260 mΩ RDS(on) and 3.4 μJ Eoss reduce conduction + switching loss by >25% vs. 600 V Si MOSFET, enabling 97.2% peak efficiency. |
Use Scenario: Dual-active-bridge (DAB) isolation stage in 10 kVA online UPS with bidirectional power flow. IC Role / Device Role / Timing Role: Bidirectional switching element in high-side/low-side legs, handling 500 V DC-link and 50 A peak current. Use Value: Kelvin source and 19 A pulse rating maintain gate control integrity during rapid polarity reversal, eliminating shoot-through risk. |
| Solar PV Inverters | EV Charging Infrastructure |
|
Use Scenario: Three-phase T-type NPC inverter stage in 15 kW string inverter with 1000 V DC input. IC Role / Device Role / Timing Role: Outer-leg switching device in NPC topology, blocking 650 V and conducting 25 A RMS. Use Value: 175 °C Tj,max and 2.30 °C/W Rth(j–c) allow compact heatsinking in outdoor-rated enclosures with ambient up to 65 °C. |
Use Scenario: Active front-end (AFE) rectifier in 22 kW AC-to-DC EV charging module with PFC + DC–DC stages. IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC with 400 V AC input and 800 V DC-link. Use Value: Low Qg (6 nC) and low Qoss (22 nC) minimize gate drive loss and improve light-load efficiency compliance with IEC 62612. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar 650 V SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Wolfspeed C3M0065065K | RDS(on) = 65 mΩ (lower), but TO247-4L package; no Kelvin source; higher Ciss (420 pF). | Better conduction loss, but less gate drive stability in high-di/dt layouts; requires more complex PCB layout for noise immunity. | Select when lowest RDS(on) dominates and thermal margin allows larger TO247 footprint. |
| STMicroelectronics SCT3065KLHAG | RDS(on) = 65 mΩ, same PG-TO263-7 package, but no Kelvin source; VGS(th) = 5.5–7.5 V (higher threshold). | Higher gate drive voltage needed; no dedicated Kelvin return limits high-frequency hard-switching robustness. | Select for cost-sensitive designs where gate drive simplicity outweighs switching loss optimization. |
Compared with C3M0065065K and SCT3065KLHAG, IMBG65R260M1HXTMA1 trades higher RDS(on) for superior gate control fidelity via Kelvin source and lower dynamic losses in hard-switched topologies-making it optimal for telecom SMPS and UPS where waveform integrity and reliability are prioritized over absolute conduction loss.
Availability
IMBG65R260M1HXTMA1 is available at Aetrix Electronics and suitable for telecom SMPS, UPS systems, and solar PV inverters requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.
Supply support for IMBG65R260M1HXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN technologies since 2001.
The CoolSiC™ M1 series targets high-efficiency, high-reliability power conversion in industrial and renewable energy systems, emphasizing ruggedness, thermal resilience, and ease of integration into existing Si-based gate drive architectures.
FAQ
Can IMBG65R260M1HXTMA1 be driven with standard 0–12 V or 0–15 V gate drivers?
Yes-it supports gate voltages from –2 V to +20 V, with recommended turn-on at 18 V and turn-off at 0 V. Its 3.5–5.7 V threshold and robust oxide allow compatibility with industry-standard isolated gate drivers like the 1EDC60H12AH or UCC5350, without requiring negative bias for noise immunity in most applications.
What is the purpose of the Kelvin source (Pin 2), and can it be left unconnected?
Pin 2 is the dedicated Kelvin source terminal for gate driver return; it must be connected directly to the driver's source reference node. Leaving it unconnected or tying it to Pin 1 causes gate ringing, delayed turn-off, and potential device failure due to source inductance coupling-Infineon explicitly warns against exchanging Pins 1 and 2.
How does the body diode performance compare to silicon alternatives in hard-commutation scenarios?
This device's body diode delivers 33 nC forward recovery charge and 16.6 ns recovery time at 1000 A/μs di/dt-significantly lower than 600 V Si MOSFETs (typically >100 nC, >50 ns). That enables reliable hard commutation in totem-pole PFC and bidirectional converters without snubbers or external diodes.
Is IMBG65R260M1HXTMA1 suitable for automotive applications?
No-it is qualified per JEDEC for industrial applications only, not AEC-Q101. Its packaging, test coverage, and documentation lack automotive-specific stress screening, traceability, and failure analysis reporting required for车载 use; Infineon offers separate AEC-Q101-qualified CoolSiC™ variants (e.g., IMBG65R260M1HXKSA1) for automotive.
IMBG65R260M1HXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSIC™ M1
- Package/Case:
- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 18V
- Rds On (Max) @ Id, Vgs:
- 346mOhm @ 3.6A, 18V
- Vgs(th) (Max) @ Id:
- 5.7V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 6 nC @ 18 V
- Vgs (Max):
- +23V, -5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 201 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-7-12
IMBG65R260M1HXTMA1 FAQ
1.How can I place an order for IMBG65R260M1HXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IMBG65R260M1HXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IMBG65R260M1HXTMA1 reliable?
The price and inventory of IMBG65R260M1HXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMBG65R260M1HXTMA1 is usually 5 days.
3.What payment methods are accepted for IMBG65R260M1HXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMBG65R260M1HXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IMBG65R260M1HXTMA1?
IMBG65R260M1HXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IMBG65R260M1HXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IMBG65R260M1HXTMA1?
For technical support, including IMBG65R260M1HXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMBG65R260M1HXTMA1 requirements.
6.How does Aetrix verify that IMBG65R260M1HXTMA1 is sourced from the original manufacturer or authorized distributors?
All IMBG65R260M1HXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMBG65R260M1HXTMA1 meets industry standards.
7.What is the process for return or replacement of IMBG65R260M1HXTMA1?
All IMBG65R260M1HXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMBG65R260M1HXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IMBG65R260M1HXTMA1 part is unused and in its original packaging.
Return procedure for IMBG65R260M1HXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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