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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMW120R007M1HXKSA1

Name: IMW120R007M1HXKSA1
Brand: Infineon Technologies
SKU: IMW120R007M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMW120R007M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IMW120R007M1HXKSA1.pdf

Description:: SIC DISCRETE

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Product details

Overview

IMW120R007M1HXKSA1 from Infineon is a 1200 V, 7 mΩ silicon carbide trench MOSFET in PG-TO247-3-U06 package, rated for 225 A DC drain current at T_C = 25°C and optimized for high-efficiency hard-switching power conversion. It features a benchmark gate threshold voltage of 4.2 V, robust body diode for hard commutation, and XT interconnection technology enabling 0.15 K/W junction-to-case thermal resistance - deployed in solar string inverters and EV DC fast chargers.

For engineers reviewing the IMW120R007M1HXKSA1 datasheet, IMW120R007M1HXKSA1 pinout, IMW120R007M1HXKSA1 application, or IMW120R007M1HXKSA1 equivalent, key selection criteria include R_DS(on) stability over temperature (7–14 mΩ from 25°C to 175°C), low C_oss (420 pF) and E_oss (172 µJ), and validated dV/dt robustness up to 150 V/ns under industrial operating conditions.

Technical Context

This SiC MOSFET employs a trench-gate structure with optimized channel geometry and field-stop doping to achieve low on-resistance while maintaining high avalanche ruggedness (E_AS = 638 mJ). Its gate oxide is qualified for 200 kV/µs transient immunity, and the device operates with a fixed V_GS(th) range (3.5–5.2 V) that minimizes parasitic turn-on risk.

The integrated body diode exhibits low forward voltage (3.8 V at 108 A, 25°C) and controlled reverse recovery (Q_fr = 900 nC), enabling zero-voltage switching (ZVS) in totem-pole PFC and bidirectional DC-DC topologies without external anti-parallel diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - supports 1000 V DC bus systems with 20% safety margin for overvoltage transients in solar and EV charging applications.
R_DS(on)	7 mΩ @ V_GS = 18 V, T_vj = 25°C - enables <1.5 W conduction loss at 100 A, critical for >99% efficiency in 15–30 kW inverters.
I_D_DC	225 A @ T_C = 25°C - delivers high power density in compact heatsink designs when paired with low-R_th(j-c) (0.15 K/W).
E_off	1200 µJ @ V_DD = 800 V, I_D = 108 A - reduces switching losses by ~40% vs. comparable Si IGBTs, enabling >100 kHz operation.
Q_GD	57.7 nC - low gate-drain charge improves Miller immunity and simplifies gate driver design for stable high-dV/dt operation.
T_vj(max)	175°C - allows sustained operation in high-ambient environments (e.g., outdoor EV chargers) without derating below 150°C junction.

Pinout & Package

Supplied in PG-TO247-3-U06 package - a thermally enhanced variant of TO-247 with optimized copper clip bonding and reduced parasitic inductance for high-frequency switching. The package features isolated mounting hole and 3.5 mm creepage/clearance per IEC 60664-1.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control terminal	Accepts recommended V_GS(on) = 15–18 V and V_GS(off) = –5 to 0 V; internal R_G,int = 1.8 Ω limits ringing during fast transitions.
2 (Drain)	High-side power output	Connected to DC bus or transformer primary; rated for 1200 V blocking and 504 A peak surge current.
3 (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; low-inductance layout essential for minimizing V_GS disturbance during switching.

Key Features

Feature	Design Value
XT interconnection technology	Reduces R_th(j-c) to 0.15 K/W - enables 30% higher power density vs. standard TO-247 SiC MOSFETs under identical cooling conditions.
Robust body diode	Q_fr = 900 nC @ 25°C - supports hard commutation in bidirectional converters without external diode, reducing BOM count and layout area.
Benchmark V_GS(th)	4.2 V typ. with tight 3.5–5.2 V spread - ensures consistent turn-on timing across temperature and batch, critical for paralleling multiple devices.
dV/dt immunity	150 V/ns - prevents false triggering in high-noise motor drive and UPS environments without requiring negative gate bias.

Applications

Solar String Inverter

EV DC Fast Charger

Use Scenario: High-voltage DC-AC conversion stage in multi-string photovoltaic inverters operating at 1000–1500 V DC input.

IC Role / Device Role / Timing Role: Main switching device in three-phase NPC or T-type inverter leg, switching at 30–100 kHz with ZVS capability.

Use Value: Low E_off (1200 µJ) and stable R_DS(on) reduce thermal stress and enable air-cooled designs up to 25 kW per string.

Use Scenario: Isolated DC-DC stage in 150–350 kW EV charging stations converting grid AC to 200–1000 V DC for battery packs.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology, operating at 100–200 kHz with soft switching.

Use Value: 0.15 K/W R_th(j-c) and 175°C T_vj,max support continuous 200 A operation under ambient temperatures up to 65°C.

Industrial Online UPS

General Purpose Drive (GPD)

Use Scenario: Double-conversion UPS delivering clean 3-phase 400 V AC output with <10 ms switchover time and 98% efficiency.

IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional power flow between rectifier and output filter, supporting regenerative braking.

Use Value: Body diode Q_fr = 900 nC and low V_SD = 3.8 V minimize conduction loss during regeneration, improving system efficiency by 1.2%.

Use Scenario: Motor control in HVAC compressors, pumps, and conveyors requiring 10–100 kW variable-speed drives with IEC 61800-3 compliance.

IC Role / Device Role / Timing Role: Output bridge switch in 2-level or 3-level inverter, operating at 8–16 kHz with active gate control.

Use Value: 150 V/ns dV/dt rating eliminates need for snubbers in noisy industrial environments, reducing component count and board space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K	R_DS(on) = 6.5 mΩ, but R_th(j-c) = 0.22 K/W; no XT interconnect; lower E_off (1050 µJ) but higher Q_GD (65 nC)	Limited to lower-power (<15 kW) designs due to higher thermal resistance; less suitable for forced-air-cooled high-density modules	Select when lowest possible conduction loss dominates over thermal performance and layout simplicity.
STW70N120DF2	Si IGBT with V_CE(sat) = 2.5 V; higher switching loss (E_off ≈ 4500 µJ); T_j(max) = 150°C; no body diode recovery specification	Requires external freewheeling diode; unsuitable for ZVS or bidirectional topologies; limited to <20 kHz switching	Select only for cost-sensitive, low-frequency (<10 kHz), non-regenerative applications where SiC ROI is not justified.

Compared with C3M0065120K and STW70N120DF2, IMW120R007M1HXKSA1 delivers superior thermal performance (0.15 K/W), tighter V_GS(th) distribution, and verified hard-commutation capability - making it the preferred choice for high-power, high-reliability, and high-frequency industrial power systems.

Availability

IMW120R007M1HXKSA1 is available at Aetrix Electronics and suitable for solar string inverters, EV DC fast chargers, and industrial online UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing from Infineon's certified production lines.

Supply support for IMW120R007M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This device belongs to the CoolSiC™ 1200 V trench MOSFET product line, engineered specifically for high-efficiency, high-reliability industrial power conversion systems operating above 1000 V DC bus voltage.

FAQ

What gate drive voltage is recommended for reliable operation?

Infineon specifies V_GS(on) = 15–18 V and V_GS(off) = –5 to 0 V. A 18 V turn-on voltage ensures full enhancement and minimal R_DS(on), while 0 V turn-off (not negative) is sufficient due to the device's robust immunity to parasitic turn-on - confirmed by dV/dt testing up to 150 V/ns.

Can IMW120R007M1HXKSA1 be paralleled for higher current capacity?

Yes - its positive temperature coefficient of R_DS(on) and tight V_GS(th) distribution (3.5–5.2 V) enable stable current sharing. Parallel operation requires matched gate loop inductance and Kelvin source connections; Infineon Application Note AN2019-05 provides layout guidelines for multi-device configurations.

Is the body diode suitable for continuous reverse conduction?

Yes - the body diode is fully characterized for hard commutation with IS_DC = 205 A at T_C = 25°C and Q_fr = 900 nC. It supports bidirectional power flow in DAB and totem-pole PFC without external diodes, though thermal design must account for V_SD = 3.8 V forward drop at rated current.

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies I_D_DC = 168 A at T_C = 100°C and P_tot = 375 W under those conditions. For continuous operation, T_C must not exceed 100°C unless derated per the P_tot = f(T_C) curve - exceeding this risks accelerated wear-out due to bond wire fatigue, as validated in JEDEC JESD22-A108 power cycling tests.

IMW120R007M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 225A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 18V

Rds On (Max) @ Id, Vgs:: 9.9mOhm @ 108A, 18V

Vgs(th) (Max) @ Id:: 5.2V @ 47mA

Gate Charge (Qg) (Max) @ Vgs:: 289 nC @ 18 V

Vgs (Max):: +20V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 9170 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 750W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IMW120R007M1HXKSA1 FAQ

1.How can I place an order for IMW120R007M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMW120R007M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMW120R007M1HXKSA1 reliable?

The price and inventory of IMW120R007M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMW120R007M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMW120R007M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMW120R007M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMW120R007M1HXKSA1?

IMW120R007M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMW120R007M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMW120R007M1HXKSA1?

For technical support, including IMW120R007M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMW120R007M1HXKSA1 requirements.

6.How does Aetrix verify that IMW120R007M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMW120R007M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMW120R007M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMW120R007M1HXKSA1?

All IMW120R007M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMW120R007M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMW120R007M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMW120R007M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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