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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMW65R015M2HXKSA1

Name: IMW65R015M2HXKSA1
Brand: Infineon Technologies
SKU: IMW65R015M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMW65R015M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IMW65R015M2HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET

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Product details

Overview

IMW65R015M2HXKSA1 from Infineon is a 650 V, 14.5 mΩ silicon carbide (SiC) MOSFET in PG-TO247-3 package, featuring ultra-low switching losses, robust body diode operation under hard commutation, and benchmark gate threshold voltage of 4.5 V. It serves as a high-efficiency power switch in high-frequency DC-DC converters, solar inverters, and EV charging systems.

For engineers reviewing the IMW65R015M2HXKSA1 datasheet, IMW65R015M2HXKSA1 pinout, IMW65R015M2HXKSA1 application, or IMW65R015M2HXKSA1 equivalent, key selection criteria include R_DS(on) at 175 °C, Q_G = 79 nC, E_oss = 20.1 µJ, dv/dt ruggedness up to 200 V/ns, and thermal resistance R_th(j-c) = 0.44 °C/W.

Technical Context

This CoolSiC™ Gen 2 MOSFET uses trench-based SiC technology with .XT interconnection for enhanced thermal performance. Its gate threshold voltage (V_GS(th) = 4.5 V typ) ensures stable turn-on behavior and immunity to parasitic turn-on even with 0 V gate drive during turn-off.

The device integrates an internal body diode rated for hard commutation, with forward recovery time t_fr = 40.5 ns and Q_fr = 221 nC. Dynamic parameters-including C_iss = 2792 pF, C_rss = 16 pF, and E_on/E_off = 825/191 µJ at 400 V-are optimized for high-frequency, high-efficiency topologies like Totem-Pole PFC and three-level NPC inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports 400 V DC bus designs with ≥50% voltage margin for transient overvoltage handling
R_DS(on), max	18 mΩ at T_j = 175 °C - enables <93 A continuous conduction at 100 °C case temperature without derating
Q_G	79 nC - determines gate driver power requirement and influences switching speed control in 100–500 kHz applications
E_oss	20.1 µJ @ 400 V - directly impacts zero-voltage switching (ZVS) capability and soft-switching design feasibility
R_th(j-c)	0.44 °C/W - allows 341 W power dissipation at T_C = 25 °C, supporting compact heatsink integration
dv/dt ruggedness	200 V/ns - ensures reliable operation in fast-switching half-bridge configurations without false triggering
I_D,pulse	393 A - supports short-duration overload conditions in motor drive and UPS peak-load scenarios

Pinout & Package

IMW65R015M2HXKSA1 uses the PG-TO247-3 package with isolated tab (Drain-connected), enabling direct mounting to heatsinks while maintaining electrical isolation. The package features copper clip bonding and .XT interconnect technology for low-inductance, high-current capability and superior thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires 0–18 V swing; internal R_G,int = 2.1 Ω affects Miller plateau timing
Pin 2 (Drain)	High-side power terminal	Connected to internal SiC die drain; tab is electrically tied to Pin 2 - must be isolated from heatsink unless referenced to system ground
Pin 3 (Source)	Reference node	Serves as return path for load current and gate drive loop; critical for minimizing common-source inductance in high-dI/dt switching

Key Features

Feature	Design Value
Ultra-low switching losses	E_on + E_off = 1016 µJ @ 400 V - reduces conduction + switching loss trade-off, enabling >99% efficiency in 100 kHz+ PFC stages
Robust body diode	t_fr = 40.5 ns, Q_fr = 221 nC - eliminates need for external anti-parallel Si diode in bidirectional topologies like active rectification
Benchmark V_GS(th)	4.5 V typ (3.5–5.6 V range) - provides clear logic-level distinction between on/off states, reducing risk of partial turn-on during noise transients
Flexible gate drive	Rated for V_GS = –10 to +25 V transient - supports bipolar gate driving (e.g., –5 V / +15 V) to suppress Miller-induced turn-on
.XT interconnection	Reduces package inductance and thermal resistance - improves current sharing in paralleled devices and extends lifetime under thermal cycling

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-phase string inverters operating at 100–150 kHz with 1000 V DC input and grid-synchronized AC output.

IC Role / Device Role / Timing Role: High-side switching element in NPC or T-type multilevel topology, handling 30–50 kW per phase.

Use Value: Enables >98.5% weighted efficiency due to low R_DS(on) and E_oss, reducing thermal stress on heatsinks and enabling air-cooled module designs.

Use Scenario: 150–350 kW liquid-cooled charging stations with bidirectional AC/DC and DC/DC conversion stages.

IC Role / Device Role / Timing Role: Primary switch in isolated dual-active-bridge (DAB) DC/DC converter, operating at 150–300 kHz.

Use Value: Supports ZVS across full load range using low Q_oss and fast turn-off (t_f = 8.0 ns), cutting transformer size by 35% versus Si IGBT solutions.

Industrial UPS Systems

High-Density SMPS

Use Scenario: Online double-conversion UPS delivering clean 3-phase 400 V output with <10 ms switchover and harmonic mitigation.

IC Role / Device Role / Timing Role: Output inverter switch in three-level ANPC configuration, managing regenerative braking energy and battery charge/discharge cycles.

Use Value: Withstands repetitive avalanche energy (E_AR = 1.86 mJ) and 200 V/ns dv/dt, ensuring reliability during grid fault transients and load dumps.

Use Scenario: 3–10 kW telecom/server PSUs using interleaved totem-pole PFC + LLC resonant DC/DC stages.

IC Role / Device Role / Timing Role: Active switch in totem-pole PFC bridge leg, conducting both AC line half-cycles with synchronous rectification.

Use Value: Body diode's hard-commutation capability (I_SM = 393 A pulse) eliminates dead-time optimization complexity and prevents shoot-through during zero-crossing transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0015065K	R_DS(on) = 15 mΩ (typ), Q_G = 82 nC, R_th(j-c) = 0.45 °C/W, TO247-3 package	Higher gate charge increases driver loss; slightly lower thermal performance limits peak power density	Preferred where legacy Wolfspeed ecosystem support or qualification history is required
ROHM SCT3015AL	R_DS(on) = 15 mΩ (typ), Q_G = 72 nC, R_th(j-c) = 0.47 °C/W, TO247N package with non-isolated tab	Non-isolated tab requires insulating interface to heatsink; lower Q_G eases gate drive but body diode Q_fr not specified	Selected when cost sensitivity outweighs thermal margin needs and board layout accommodates tab isolation constraints

Compared with C3M0015065K and SCT3015AL, IMW65R015M2HXKSA1 delivers the lowest combined E_oss + Q_G product (20.1 µJ + 79 nC), enabling tighter dead-time control and higher frequency operation in ZVS designs without compromising avalanche robustness or thermal headroom.

Availability

IMW65R015M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified industrial reliability.

Supply support for IMW65R015M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure serving automotive, industrial, and renewable energy markets.

This part belongs to Infineon's CoolSiC™ Gen 2 family, engineered specifically for high-efficiency, high-power-density systems operating above 60 kHz-targeting next-generation energy conversion in solar, EV, and industrial power supplies.

FAQ

What is the maximum recommended gate drive voltage for reliable long-term operation?

The datasheet specifies a static gate-source voltage limit of –7 V to +23 V and a transient rating of –10 V to +25 V for pulses ≤500 ns. For sustained reliability, Infineon recommends limiting V_GS to 0–18 V during normal switching, aligning with the recommended turn-on/turn-off voltages and avoiding prolonged exposure above 20 V to prevent oxide degradation.

Does IMW65R015M2HXKSA1 require an external anti-parallel diode in bridge configurations?

No. The integrated body diode is fully characterized for hard commutation with t_fr = 40.5 ns and Q_fr = 221 nC, and it is qualified for repetitive reverse recovery stress. This eliminates the need for external diodes in totem-pole PFC or bidirectional DC/DC topologies, simplifying layout and reducing component count.

How does the .XT interconnection technology improve thermal performance compared to standard wire-bonded TO-247?

.XT (eXtreme Thermal) uses copper clips instead of aluminum wires to connect the die to leads, reducing thermal resistance by ~12% and package inductance by ~30%. This yields R_th(j-c) = 0.44 °C/W versus ~0.50 °C/W in conventional variants, directly improving power handling and thermal cycling endurance in high-reliability applications.

Is this device qualified for automotive applications?

No. IMW65R015M2HXKSA1 is fully qualified per JEDEC JESD47 for industrial applications only (T_j = –55 °C to +175 °C). It is not AEC-Q101 qualified, lacks automotive-specific test reports (e.g., HTGB, HTRB), and is not listed in Infineon's automotive-grade CoolSiC™ portfolio. Automotive use requires explicit qualification validation.

IMW65R015M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™ Gen 2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 13.2mOhm @ 64.2A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 13mA

Gate Charge (Qg) (Max) @ Vgs:: 79 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 2792 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 341W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-40

IMW65R015M2HXKSA1 FAQ

1.How can I place an order for IMW65R015M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMW65R015M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMW65R015M2HXKSA1 reliable?

The price and inventory of IMW65R015M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMW65R015M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMW65R015M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMW65R015M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMW65R015M2HXKSA1?

IMW65R015M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMW65R015M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMW65R015M2HXKSA1?

For technical support, including IMW65R015M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMW65R015M2HXKSA1 requirements.

6.How does Aetrix verify that IMW65R015M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMW65R015M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMW65R015M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMW65R015M2HXKSA1?

All IMW65R015M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMW65R015M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMW65R015M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMW65R015M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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