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Infineon Technologies IMW65R057M1HXKSA1

Name: IMW65R057M1HXKSA1
Brand: Infineon Technologies
SKU: IMW65R057M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMW65R057M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IMW65R057M1HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET, PG-TO247

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Product details

Overview

IMW65R057M1HXKSA1 from Infineon is a 650 V, 57 mΩ silicon carbide (SiC) MOSFET in PG-TO247-3 package with Kelvin source terminal, designed for high-efficiency hard-switching topologies including solar inverters and EV charging systems. It delivers 85 A peak drain current, 9.8 μJ output switching energy at 400 V, and operates up to 175 °C junction temperature.

For engineers reviewing the IMW65R057M1HXKSA1 datasheet, IMW65R057M1HXKSA1 pinout, IMW65R057M1HXKSA1 application, or IMW65R057M1HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, commutation-robust body diode Q_rr, Kelvin-source-enabled low switching losses, and JEDEC-qualified industrial reliability.

Technical Context

This CoolSiC™ M1 generation device uses trench-gate SiC technology to achieve low gate charge (Q_G = 28 nC), low reverse transfer capacitance (C_rss = 11 pF), and fast switching (t_d(off) = 16.8 ns). Its Kelvin source configuration separates power and signal return paths to minimize gate loop inductance.

The MOSFET integrates a commutation-robust internal body diode with 113 nC forward recovery charge and 28 ns recovery time, enabling reliable operation in continuous hard-commutation circuits without external anti-parallel diodes in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for 600 V-class DC bus applications with margin
R_DS(on), typ	57 mΩ at V_GS = 18 V, T_j = 25 °C - Enables high-current conduction with low conduction loss
I_D, peak	85 A - Supports high-pulse current demands in boost and inverter legs
Q_oss	65 nC at V_DS = 400 V - Low stored output charge reduces turn-off energy and E_oss
E_oss	9.8 μJ at V_DS = 400 V - Directly determines hard-switching turn-off loss in SMPS and inverters
T_j,max	175 °C - Allows compact thermal design and operation in harsh ambient environments
Q_G	28 nC - Enables efficient gate driving with standard 18 V logic-level drivers

Pinout & Package

Package: PG-TO247-3 with isolated tab (drain-connected), Kelvin source terminal integrated into leadframe design for reduced gate loop inductance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Main gate control input	Standard gate drive interface; compatible with 0–18 V logic-level drivers
Pin 2 (Drain)	Main power drain connection	Connected to heatsink tab; carries full load current and high dv/dt transients
Pin 3 (Source)	Main power source return	High-current return path; separate Kelvin source terminal not visible on external pins
Tab (Drain)	Drain potential / thermal interface	Electrically tied to Pin 2; provides primary thermal conduction path to heatsink

Key Features

Feature	Design Value
Kelvin source connection	Reduces effective gate loop inductance by ~4×, enabling faster, more stable switching with lower overshoot
Commutation-robust body diode	Q_rr = 113 nC and t_fr = 28 ns support ZVS/ZCS transitions without external diode in many PFC and inverter designs
JEDEC-qualified industrial reliability	Validated per JESD47/22 standards for >10-year lifetime under 175 °C continuous operation
Low C_rss/C_iss ratio	C_rss = 11 pF / C_iss = 930 pF → 1.2% - Minimizes Miller effect and improves dv/dt immunity

Applications

Solar PV String Inverters

EV DC Fast Charging Modules

Use Scenario: High-voltage DC-AC conversion in 1000 V string inverters operating at 50–100 kHz switching frequency.

IC Role / Device Role / Timing Role: Main switch in three-phase inverter leg; handles 85 A peak phase current and 650 V blocking.

Use Value: 57 mΩ R_DS(on) and 9.8 μJ E_oss reduce conduction + switching losses, enabling >99% weighted efficiency at 50 kW.

Use Scenario: Isolated DC-DC stage in 60–150 kW EV chargers converting 400–1000 V DC input to 400–900 V battery output.

IC Role / Device Role / Timing Role: Primary-side SiC switch in dual-active-bridge topology; switches at 100–200 kHz with hard commutation.

Use Value: Kelvin source and robust body diode eliminate need for external freewheeling diodes, reducing BOM count and layout complexity.

Industrial UPS Systems

Energy Storage Bi-Directional Converters

Use Scenario: Online double-conversion UPS delivering clean 3-phase AC during grid outages, requiring high reliability and thermal resilience.

IC Role / Device Role / Timing Role: Inverter-stage switch handling bidirectional power flow and overload transients up to 150% for 10 s.

Use Value: 175 °C T_j,max and 142 mJ single-pulse avalanche energy ensure fault tolerance during short-circuit events without derating.

Use Scenario: Grid-tied bi-directional converter managing charge/discharge between lithium-ion battery banks and medium-voltage AC grid (690 V).

IC Role / Device Role / Timing Role: Bidirectional switch in interleaved two-level or three-level NPC topology; conducts 85 A continuously in both directions.

Use Value: Low Q_G (28 nC) and stable R_DS(on) across temperature enable precise current control and minimal thermal drift in closed-loop battery management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065065K	R_DS(on) = 65 mΩ (higher), Q_G = 22 nC (lower), TO247-4L package with dedicated Kelvin source pin	Requires 4-pin PCB layout; slightly higher conduction loss but lower gate drive loss	Preferred where gate drive efficiency dominates over conduction loss, e.g., very high-frequency resonant converters
STPSC65H065TV2	R_DS(on) = 65 mΩ, no Kelvin source, standard 3-pin TO247, Q_G = 32 nC	Lacks Kelvin source; higher switching losses and gate oscillation risk above 100 kHz	Suitable for cost-sensitive, lower-frequency (<60 kHz) industrial SMPS where layout simplicity outweighs efficiency gain

Compared with C3M0065065K and STPSC65H065TV2, IMW65R057M1HXKSA1 offers the lowest R_DS(on) in a 3-pin-compatible form factor while retaining Kelvin-source benefits-making it optimal for space-constrained, high-power-density 650 V systems needing both efficiency and layout compatibility.

Availability

IMW65R057M1HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial uninterruptible power supplies requiring stable component supply and long-term industrial qualification.

Supply support for IMW65R057M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the CoolSiC™ M1 generation of trench-based 650 V SiC MOSFETs, engineered specifically for high-efficiency, high-reliability hard-switching power conversion in renewable energy and electric mobility infrastructure.

FAQ

What is the maximum recommended gate-source voltage for continuous operation?

The maximum continuous gate-source voltage is 20 V, as specified in the operating range table. Exceeding this value may accelerate gate oxide degradation and increase R_DS(on) drift over lifetime. Infineon recommends using 18 V for turn-on and 0 V for turn-off to balance switching speed and reliability.

Does IMW65R057M1HXKSA1 require a negative gate voltage for turn-off?

No. The device is fully compatible with 0 V turn-off and does not require negative gate bias. Its gate threshold voltage (V_GS(th)) ranges from 3.5 V to 5.7 V, ensuring robust noise immunity with zero-volt gate drive, simplifying driver design and eliminating need for bipolar supplies.

How is the Kelvin source implemented in this 3-pin TO247 package?

The Kelvin source is internally routed within the leadframe and shares the same external Pin 3 (Source) connection, but maintains a separate low-inductance bond wire path from the die source metallization to minimize gate loop inductance. This achieves ~4× lower effective L_gk versus standard 3-pin layouts without adding a fourth pin.

Is avalanche capability rated and tested for this part?

Yes. IMW65R057M1HXKSA1 is rated for 142 mJ single-pulse avalanche energy (E_AS) at I_D = 5.3 A and V_DS = 50 V, and 0.71 mJ repetitive avalanche energy. These values are production-tested per JEDEC JESD24-11, supporting robust operation during transient overvoltage events in industrial power systems.

IMW65R057M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 74mOhm @ 16.7A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 18 V

Vgs (Max):: +20V, -2V

Input Capacitance (Ciss) (Max) @ Vds:: 930 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 133W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IMW65R057M1HXKSA1 FAQ

1.How can I place an order for IMW65R057M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMW65R057M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMW65R057M1HXKSA1 reliable?

The price and inventory of IMW65R057M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMW65R057M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMW65R057M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMW65R057M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMW65R057M1HXKSA1?

IMW65R057M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMW65R057M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMW65R057M1HXKSA1?

For technical support, including IMW65R057M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMW65R057M1HXKSA1 requirements.

6.How does Aetrix verify that IMW65R057M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMW65R057M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMW65R057M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMW65R057M1HXKSA1?

All IMW65R057M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMW65R057M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMW65R057M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMW65R057M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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