Infineon Technologies IMW65R083M1HXKSA1

Overview

IMW65R083M1HXKSA1 from Infineon is a 650 V, 83 mΩ silicon carbide (SiC) MOSFET in PG-TO247-3 package with Kelvin source configuration, rated for 59 A peak drain current and 104 W power dissipation at T_c = 25 °C. It features low Q_oss (44 nC @ 400 V), fast commutation-robust body diode (t_fr = 22 ns), and operates up to T_j,max = 175 °C - enabling high-efficiency, high-power-density designs in solar inverters and EV charging systems.

For engineers reviewing the IMW65R083M1HXKSA1 datasheet, IMW65R083M1HXKSA1 pinout, IMW65R083M1HXKSA1 application, or IMW65R083M1HXKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, dv/dt ruggedness (200 V/ns), gate oxide reliability under 23 V static V_GS, and Kelvin-source–enabled switching loss reduction in hard-switched topologies.

Technical Context

This CoolSiC™ M1-generation trench MOSFET uses silicon carbide substrate to deliver wide-bandgap advantages: low conduction loss (R_DS(on),typ = 83 mΩ @ 25 °C, 111 mΩ @ 175 °C), minimal pulse-current dependency on temperature, and enhanced avalanche capability (E_AS = 95 mJ). Its internal body diode supports continuous hard commutation without external anti-parallel diodes.

The Kelvin source terminal (Pin 2 tab + Pin 3 source) separates power and signal return paths, reducing gate-drive loop inductance and enabling up to 4× lower switching losses versus standard TO-247 configurations. Gate threshold voltage is tightly distributed (V_GS(th) = 3.5–5.7 V), supporting robust turn-on with 18 V drive while maintaining immunity to spurious turn-on under high dv/dt.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (lead-free, RoHS-compliant, isolated tab). Thermal resistance R_th(j–c) = 1.44 °C/W enables direct heatsink mounting with low thermal impedance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0065065K and SCT3080ALHRC11, IMW65R083M1HXKSA1 offers balanced trade-offs: superior dv/dt immunity (200 V/ns), JEDEC industrial qualification, and proven body-diode performance - making it optimal for mission-critical renewable energy and EV infrastructure where reliability outweighs marginal R_DS(on) gains.

Availability

IMW65R083M1HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging stations, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.

Supply support for IMW65R083M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide technology since 2001.

This device belongs to the CoolSiC™ M1 generation - engineered specifically for high-efficiency, high-reliability power conversion in renewable energy, e-mobility, and industrial motor drives where thermal resilience and switching fidelity are critical.

FAQ

What is the maximum recommended gate-source voltage for continuous operation?

The datasheet specifies V_GS = –5 V to +23 V for static conditions, but the recommended operating range is –2 V to +20 V (Table 4). Continuous use above +20 V risks accelerated gate oxide degradation; +18 V is the preferred turn-on voltage to ensure long-term reliability while maintaining noise immunity.

Does IMW65R083M1HXKSA1 include a Kelvin source terminal?

No - this variant uses the standard PG-TO247-3 pinout (Gate–Drain–Source), not the 4-pin Kelvin-source configuration. Pin 2 is the drain-connected tab; Pin 3 is the source. True Kelvin-source versions (e.g., IMW65R083M1H) have separate source and Kelvin-source pins, which this part does not implement.

How is avalanche capability validated for this MOSFET?

It is fully qualified per JEDEC JESD22-A115 for single-pulse avalanche energy (E_AS = 95 mJ at I_D = 3.6 A, V_DS = 50 V) and repetitive avalanche (E_AR = 0.48 mJ). Testing follows standardized waveforms and thermal boundary conditions, confirming robustness in overvoltage fault scenarios common in inverter short-circuit protection.

Can this device replace silicon IGBTs in existing 1700 V-class designs?

No - its 650 V V_DS rating is incompatible with 1700 V DC-link systems. It replaces 600–650 V silicon MOSFETs or low-current IGBTs in 400–800 V applications. For 1700 V systems, Infineon's 1200 V CoolSiC™ devices (e.g., IMZ120R030M1H) are required, not this 650 V part.