Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA65R007M2HXKSA1

Name: IMZA65R007M2HXKSA1
Brand: Infineon Technologies
SKU: IMZA65R007M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IMZA65R007M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA65R007M2HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,463

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IMZA65R007M2HXKSA1 from Infineon is a 650 V, 6.7 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with 4-pin source-sense configuration, designed for high-efficiency hard-switching and resonant topologies in industrial power conversion. It delivers 890 A pulsed drain current, ultra-low QG (179 nC), and Eoss (45.7 µJ at 400 V), enabling compact, high-frequency SMPS and EV charging systems.

For engineers reviewing the IMZA65R007M2HXKSA1 datasheet, IMZA65R007M2HXKSA1 pinout, IMZA65R007M2HXKSA1 application, or IMZA65R007M2HXKSA1 equivalent, key selection criteria include its 4.5 V gate threshold voltage, robust body diode operation under hard commutation, .XT interconnection technology for thermal performance, and non-interchangeable source/driver-source pins.

Technical Context

This CoolSiC™ G2 MOSFET uses Infineon's second-generation SiC trench process to achieve benchmark RDS(on) stability over temperature and immunity to parasitic turn-on-even with 0 V gate turn-off. Its 4-pin TO247 layout separates power source (Pin 2) and driver source (Pin 3), enabling precise gate loop control and minimizing common-source inductance.

The device integrates an internal body diode rated for 4.3 V forward voltage at 146.3 A and supports bipolar gate driving (−10 V to +25 V transient). Its dv/dt ruggedness of 200 V/ns and JEDEC-qualified industrial reliability ensure stable operation in high-noise motor drive and solar inverter environments.

Key Specifications

Parameter	Value and Actual Design Meaning
VDSS	650 V - Maximum blocking voltage across drain-source, enabling use in 400–600 V DC bus applications without derating.
RDS(on), typ	6.7 mΩ at VGS = 15 V, Tj = 25 °C - Enables low conduction loss in high-current stages like PFC and output switches.
QG	179 nC - Low total gate charge reduces driver power requirement and enables >100 kHz switching in LLC converters.
Eoss @ 400 V	45.7 µJ - Minimizes turn-on energy loss during zero-voltage switching transitions in resonant topologies.
ID,pulse	890 A - Supports short-duration overload conditions in UPS and EV charger peak-power bursts.
VGS(th)	4.5 V (typ) - Higher than silicon MOSFETs, improving noise immunity and eliminating need for negative turn-off bias in many designs.
Rth(j-c)	0.24 °C/W - Enables high power dissipation (625 W at TC = 25 °C) with minimal junction-to-case thermal rise.

Pinout & Package

Package: PG-TO247-4 - 4-pin through-hole package with isolated tab (drain), optimized for high-current, high-thermal-demand applications. Tab is electrically connected to drain (Pin 1).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Main high-side power terminal; electrically tied to metal tab for direct heatsink mounting and lowest inductance path.
Pin 2	Power Source	High-current source return path; carries full load current but not used for gate loop sensing.
Pin 3	Driver Source	Gate loop reference point only; must not be exchanged with Pin 2-swap causes gate oscillation and malfunction.
Pin 4	Gate	Control input; driven with 0 V (turn-off) to 18 V (turn-on); supports ±10 V transient tolerance per IPC-9592B.

Key Features

Feature	Design Value
Ultra-low switching losses	Eon = 753 µJ, Eoff = 1638 µJ at 400 V/146.3 A - Reduces thermal stress and enables smaller heatsinks in 3–10 kW converters.
Robust body diode	tfr = 22.7–29.3 ns, Qfr = 362–607 nC - Sustains hard commutation in totem-pole PFC without external anti-parallel SiC diode.
.XT interconnection technology	0.24 °C/W Rth(j-c) - Achieves best-in-class thermal resistance via copper clip bonding, critical for continuous 210 A DC operation.
Benchmark VGS(th)	4.5 V (typ), 3.5–5.6 V range - Ensures consistent turn-on behavior across temperature and batch, simplifying gate driver design.
dv/dt ruggedness	200 V/ns - Withstands fast voltage transients in high-di/dt motor drives without spurious turn-on.

Applications

Solar PV Inverters

EV Charging Infrastructure

Use Scenario: Three-phase string inverters operating at 1000 V DC input with 17–22 kHz switching in boost and H-bridge stages.

IC Role / Device Role / Timing Role: High-side SiC switch in interleaved boost converter and grid-tie inverter bridge leg.

Use Value: 6.7 mΩ RDS(on) and 45.7 µJ Eoss reduce conduction and switching losses by >35% vs. 650 V Si IGBTs, enabling >99% peak efficiency.

Use Scenario: 11–22 kW AC/DC on-board chargers and 150–350 kW DC fast-charging modules with dual active bridge (DAB) topology.

IC Role / Device Role / Timing Role: Primary-side switch in DAB isolation stage, operating at 100–300 kHz with ZVS.

Use Value: 179 nC QG and low Crss (35 pF) enable clean ZVS transition and <10 ns gate delay variation across temperature, ensuring timing margin.

Industrial UPS Systems

High-Power Motor Drives

Use Scenario: Online double-conversion UPS with 400 V DC bus, delivering 10–50 kVA output with <5% THD and <20 ms transfer time.

IC Role / Device Role / Timing Role: Output inverter switch handling bidirectional power flow and battery charging cycles.

Use Value: JEDEC industrial qualification (−55 to +175 °C) and 848 mJ single-pulse avalanche energy ensure fault ride-through during line surges and short circuits.

Use Scenario: 30–100 kW servo and traction drives using space-vector PWM with >15 kHz carrier frequency and regenerative braking.

IC Role / Device Role / Timing Role: Inverter leg switch managing both motoring and active rectification modes with reverse diode conduction.

Use Value: Robust body diode with 4.3 V VF and 29.3 ns tfr allows efficient regen without snubbers, reducing system BOM count and footprint.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0065065K	RDS(on) = 6.5 mΩ, QG = 160 nC, TO247-4L package, no separate driver source pin	Lacks dedicated driver source pin; requires careful PCB layout to minimize gate loop inductance	Preferred where gate driver layout is tightly controlled and cost sensitivity outweighs layout flexibility
ROHM SCT3060AL	RDS(on) = 60 mΩ (650 V), QG = 120 nC, TO247-4L, lower voltage rating (650 V max), higher RDS(on)	Higher conduction loss limits use to <5 kW applications; less suitable for high-current EV charging	Selected for cost-sensitive 1–3 kW industrial SMPS where thermal margin permits higher RDS(on)

Compared with C3M0065065K and SCT3060AL, IMZA65R007M2HXKSA1 provides superior thermal performance (0.24 °C/W), guaranteed driver-source separation for gate control fidelity, and JEDEC industrial qualification-making it optimal for mission-critical, high-power, high-reliability systems.

Availability

IMZA65R007M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV charging infrastructure, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IMZA65R007M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

This part belongs to Infineon's CoolSiC™ G2 product line, engineered specifically for high-efficiency, high-power-density industrial and automotive power conversion systems demanding reliability beyond 15 years of field operation.

FAQ

What is the function of Pin 2 versus Pin 3 in the IMZA65R007M2HXKSA1?

Pin 2 is the power source terminal carrying full load current to the source metallization, while Pin 3 is the driver source terminal used exclusively as the gate loop reference. They are physically and electrically distinct; swapping them introduces gate oscillation and can cause destructive shoot-through due to uncontrolled common-source inductance.

Can IMZA65R007M2HXKSA1 operate with gate drive voltages below 15 V?

Yes-it is specified for recommended turn-on voltage of 18 V but functions reliably down to 15 V, where RDS(on) remains ≤8.5 mΩ at 175 °C. Operation below 12 V increases RDS(on) significantly and risks incomplete enhancement; gate drivers must maintain ≥15 V under all load and temperature conditions.

Is the internal body diode suitable for continuous freewheeling in totem-pole PFC?

Yes-the body diode is fully characterized for hard commutation with tfr = 22.7–29.3 ns and Qfr = 362–607 nC. It supports continuous conduction mode (CCM) totem-pole PFC up to 10 kW without external SiC diodes, provided junction temperature stays within −55 to +175 °C and di/dt is limited to ≤4000 A/µs.

Does IMZA65R007M2HXKSA1 require negative gate voltage for reliable turn-off?

No-its 4.5 V gate threshold voltage and robust immunity to parasitic turn-on allow safe operation with 0 V turn-off. Negative gate bias (e.g., −5 V) is optional and only beneficial in extreme EMI environments; the datasheet confirms stable turn-off at 0 V even with dv/dt = 200 V/ns.

IMZA65R007M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 210A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 6.1mOhm @ 146.3A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 29.7mA

Gate Charge (Qg) (Max) @ Vgs:: 179 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 6359 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 625W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-U02

IMZA65R007M2HXKSA1 FAQ

1.How can I place an order for IMZA65R007M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA65R007M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA65R007M2HXKSA1 reliable?

The price and inventory of IMZA65R007M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA65R007M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA65R007M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA65R007M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA65R007M2HXKSA1?

IMZA65R007M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA65R007M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA65R007M2HXKSA1?

For technical support, including IMZA65R007M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA65R007M2HXKSA1 requirements.

6.How does Aetrix verify that IMZA65R007M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA65R007M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA65R007M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA65R007M2HXKSA1?

All IMZA65R007M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA65R007M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA65R007M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA65R007M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.