Infineon Technologies IMZA65R020M2HXKSA1

Overview

IMZA65R020M2HXKSA1 from Infineon is a 650 V, 20 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with integrated body diode, designed for high-frequency hard-switching power stages in industrial and EV infrastructure. It delivers 291 A pulsed drain current, 57 nC total gate charge, and 14.7 µJ output switching energy at 400 V - enabling >99% efficiency in 3-phase totem-pole PFC and DC fast-charging inverters.

For engineers reviewing the IMZA65R020M2HXKSA1 datasheet, IMZA65R020M2HXKSA1 pinout, IMZA65R020M2HXKSA1 application, or IMZA65R020M2HXKSA1 equivalent, key selection criteria include its 4.5 V gate threshold voltage, robust 0 V turn-off immunity, 200 V/ns dv/dt ruggedness, and dedicated driver source pin for Miller clamping - all critical for reliable operation in high-power SiC half-bridges.

Technical Context

This CoolSiC™ Gen2 MOSFET uses Infineon's trench-based SiC process with .XT interconnection technology, delivering 0.55 °C/W junction-to-case thermal resistance and stable R_DS(on) up to 175 °C. Its 11.5 pF reverse transfer capacitance and 12.0 ns rise time support >200 kHz switching in isolated DC-DC converters without excessive gate drive loss.

The 4-pin TO247 layout separates driver source (Pin 3) from power source (Pin 2), eliminating common-source inductance effects during turn-on. Internal body diode exhibits 18.0 ns forward recovery time and 110 nC Q_fr at 1000 A/µs, enabling unidirectional hard commutation in bidirectional LLC resonant topologies.

Key Specifications

Pinout & Package

PG-TO247-4 package with isolated tab (Drain), featuring four discrete terminals: Pin 1 (Drain), Pin 2 (Power Source), Pin 3 (Driver Source), Pin 4 (Gate). The tab serves as high-current Drain connection; Pins 2 and 3 are electrically distinct and non-interchangeable.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Compared with C3M0021065K and SCT3022KL, IMZA65R020M2HXKSA1 offers superior dv/dt immunity and dedicated Kelvin source - critical for scalable, high-reliability designs above 50 kW where layout-induced oscillation must be eliminated at system level.

Availability

IMZA65R020M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV charging infrastructure, and industrial UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IMZA65R020M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's CoolSiC™ Gen2 650 V MOSFET product line, engineered specifically for high-efficiency, high-power-density power conversion in demanding industrial and EV infrastructure applications.

FAQ

What is the maximum continuous drain current for IMZA65R020M2HXKSA1 at 100 °C case temperature?

The maximum continuous DC drain current is 58 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.2 datasheet. This rating is limited by junction temperature constraints and assumes proper heatsinking with ≤0.55 °C/W thermal resistance. Operation beyond this current requires active cooling verification per application-specific thermal modeling.

Can Pin 2 (Power Source) and Pin 3 (Driver Source) be connected together in PCB layout?

No - Infineon explicitly states these pins are not exchangeable and their shorting may cause malfunction. Pin 2 carries high-current source return for the power loop, while Pin 3 provides a low-inductance Kelvin reference for gate driver feedback. Connecting them defeats the purpose of the 4-pin architecture and degrades switching waveform fidelity and noise immunity.

Is the internal body diode rated for continuous reverse conduction in bidirectional applications?

Yes - the device supports continuous reverse drain current up to 52.3 A at T_C = 25 °C (Table 2) and has been validated for hard commutation with 110 nC forward recovery charge and 18.0 ns recovery time (Table 8). However, sustained reverse conduction must remain within SOA limits and avoid linear-mode operation, which is not recommended per datasheet Section 5 footnote.

What gate driver voltage is required to achieve specified R_DS(on) and switching performance?

A 18 V gate drive is required for turn-on to achieve the 20 mΩ typical R_DS(on) and specified switching times (e.g., 12.0 ns rise time). Turn-off must use 0 V, not negative bias, due to the device's robust 0 V turn-off immunity. Driving outside the recommended V_GS(on)/V_GS(off) range in Table 4 risks increased conduction loss or unreliable switching behavior.