Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA65R040M2HXKSA1

Name: IMZA65R040M2HXKSA1
Brand: Infineon Technologies
SKU: IMZA65R040M2HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IMZA65R040M2HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA65R040M2HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,430

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IMZA65R040M2HXKSA1 from Infineon is a 650 V, 40 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with 4-pin source-sensing configuration. It delivers ultra-low switching losses (E_on = 30 µJ, E_off = 16 µJ @ 400 V), benchmark gate threshold voltage (V_GS(th) = 4.5 V), and robust body diode operation under hard commutation-enabling high-efficiency, high-power-density designs in EV charging infrastructure and solar PV inverters.

For engineers reviewing the IMZA65R040M2HXKSA1 datasheet, IMZA65R040M2HXKSA1 pinout, IMZA65R040M2HXKSA1 application, or IMZA65R040M2HXKSA1 equivalent, key selection criteria include its 4-pin Kelvin source layout for accurate gate drive control, R_DS(on) max of 49 mΩ at T_j = 175 °C, 142 A peak drain current, and JEDEC-qualified industrial reliability.

Technical Context

This CoolSiC™ G2 MOSFET employs Infineon's second-generation SiC trench technology with .XT interconnection for optimized thermal resistance (R_th(j–c) = 0.87 °C/W). Its 4-pin TO247 package separates power source (Pin 2) and driver source (Pin 3), eliminating source inductance-induced gate oscillation during fast switching.

The device features a robust internal body diode (V_SD = 4.3 V @ 22.9 A, T_j = 25 °C) and high dv/dt ruggedness (200 V/ns), enabling reliable operation in hard-switched topologies without external anti-parallel diodes. Gate drive flexibility includes compatibility with bipolar schemes (V_GS(off) = 0 V, V_GS(on) = 18 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Maximum blocking voltage across drain-source, rated over full junction temperature range (−55 to +175 °C).
R_DS(on), max	49 mΩ - Worst-case on-resistance at T_j = 175 °C, V_GS = 18 V, defining conduction loss ceiling in thermal design.
Q_G, typ	28 nC - Total gate charge required for full turn-on, directly impacting gate driver sizing and switching speed control.
E_oss @ 400 V	7.2 µJ - Output energy stored in C_oss, critical for calculating turn-off losses in hard-switched converters.
I_D,pulse	142 A - Peak pulsed drain current capability at T_C = 25 °C, supporting short-duration overload conditions in motor drives.
V_GS(th)	4.5 V (typ) - Precise gate threshold voltage enabling stable turn-on margin and immunity to parasitic turn-on at 0 V gate bias.
R_th(j–c)	0.87 °C/W - Junction-to-case thermal resistance, enabling accurate heatsink sizing for continuous 172 W power dissipation at T_C = 25 °C.

Pinout & Package

Package: PG-TO247-4 - 4-pin through-hole package with isolated tab (drain), designed for high-current, high-thermal-load applications. The tab is electrically connected to drain (Pin 1) and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Main high-side power terminal and primary thermal interface; electrically tied to drain potential and heatsink mounting surface.
Pin 2	Power Source	High-current source connection for main power loop; carries full load current but not used for gate drive reference.
Pin 3	Driver Source	Kelvin sense connection for gate driver return path; eliminates source inductance impact on gate waveform integrity.
Pin 4	Gate	Control input for MOSFET channel; requires low-inductance routing to minimize ringing and ensure clean switching transitions.

Key Features

Feature	Design Value
Ultra-low switching losses	E_on + E_off = 46 µJ @ 400 V, enabling >99% efficiency in 100 kHz+ PFC and DC–DC stages.
Robust body diode under hard commutation	Q_fr = 56–82 nC and t_fr = 7.6–12.2 ns, allowing reliable freewheeling without external SiC Schottky diodes.
4-pin Kelvin source configuration	Separate power and driver source terminals eliminate source inductance coupling, preventing false turn-on during dV/dt transients.
.XT interconnection technology	Reduces thermal resistance by ~15% vs. standard wire-bonded TO247, improving long-term power cycling reliability.
JEDEC-qualified for industrial use	Validated per JESD47 stress testing, ensuring 15+ year operational life in 85/85 environment and 175 °C continuous operation.

Applications

Solar PV Inverters

EV Charging Infrastructure

Use Scenario: Three-phase string inverters operating at 100–200 kHz with 1000 V DC input and grid-synchronized AC output.

IC Role / Device Role / Timing Role: High-side switch in totem-pole PFC and two-level inverter legs, handling bidirectional power flow and zero-voltage switching transitions.

Use Value: Enables >98.5% weighted efficiency by minimizing conduction (40 mΩ R_DS(on)) and switching (46 µJ E_tot) losses at 650 V bus.

Use Scenario: 22 kW–150 kW AC/DC fast chargers with active front-end rectifiers and isolated DC–DC stages.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge DC–DC converters, operating at 150–300 kHz with synchronous rectification.

Use Value: Delivers 20% higher power density than Si IGBTs due to reduced heatsink volume (0.87 °C/W R_th(j–c)) and elimination of snubbers.

Energy Storage Systems

Industrial Motor Drives

Use Scenario: Bi-directional DC–DC converters in battery energy storage systems (BESS), managing charge/discharge between 400–800 V battery banks and 480 V AC grid.

IC Role / Device Role / Timing Role: Main switching element in dual-active-bridge (DAB) topology, requiring precise soft-switching timing and reverse conduction capability.

Use Value: Supports 99.1% peak efficiency via low Q_oss (53 nC) and fast fall time (4.6 ns), reducing system cooling requirements by 35%.

Use Scenario: Variable-frequency drives (VFDs) for HVAC compressors and industrial pumps, operating at 2–15 kHz PWM with regenerative braking.

IC Role / Device Role / Timing Role: Inverter leg switch with integrated body diode conducting regenerative current during motor deceleration.

Use Value: Eliminates need for external anti-parallel diodes while maintaining <12.2 ns forward recovery time, simplifying PCB layout and BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Wolfspeed C3M0040065K	R_DS(on),max = 48 mΩ; Q_G = 32 nC; no Kelvin source pins (3-pin TO247); V_GS(th) = 3.2–4.2 V.	Lacks driver-source sensing, limiting gate drive stability in high-dV/dt environments like multi-level inverters.	Select when cost sensitivity outweighs need for ultra-stable gate control; verify layout for gate oscillation mitigation.
ROHM SCT3040KL	R_DS(on),max = 45 mΩ; Q_G = 26 nC; 4-pin TO247; V_GS(th) = 5.0–6.5 V; lower E_off (12 µJ) but higher E_on (34 µJ).	Higher V_GS(th) improves noise immunity but requires tighter gate drive voltage regulation above 15 V.	Prefer for noise-critical industrial drives where gate drive margin is constrained; confirm 18 V gate supply availability.

Compared with C3M0040065K and SCT3040KL, IMZA65R040M2HXKSA1 uniquely combines Kelvin source sensing, industry-leading V_GS(th) consistency (±0.55 V), and lowest total switching loss (46 µJ), making it optimal for high-reliability, high-frequency PFC and DAB designs where gate control fidelity is non-negotiable.

Availability

IMZA65R040M2HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV charging infrastructure, and energy storage systems requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial-grade production.

Supply support for IMZA65R040M2HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure serving automotive, industrial, and renewable energy markets.

This part belongs to Infineon's CoolSiC™ G2 product line-designed specifically for high-efficiency, high-reliability power conversion in 650 V applications such as on-board chargers, solar string inverters, and industrial UPS systems.

FAQ

Can IMZA65R040M2HXKSA1 be used with 0 V gate turn-off?

Yes-the device is explicitly characterized for robustness against parasitic turn-on even with 0 V gate turn-off voltage, thanks to its 4.5 V nominal V_GS(th) and tight ±0.55 V tolerance. This enables simplified unipolar gate driving without negative voltage rails, reducing driver complexity and cost in high-volume applications.

What is the maximum recommended gate resistor value for this MOSFET?

Based on datasheet test conditions (R_G,ext = 1.8 Ω), the maximum recommended external gate resistor is 5.6 Ω to maintain safe dv/dt (≤200 V/ns) and avoid excessive switching losses. Higher values increase turn-on delay and E_on; lower values risk gate ringing and overshoot, especially with poor PCB layout.

Is the internal body diode suitable for continuous freewheeling in a totem-pole PFC?

Yes-the body diode is fully qualified for hard commutation with Q_fr = 56–82 nC and t_fr = 7.6–12.2 ns, enabling reliable bidirectional conduction in totem-pole PFC without external diodes. However, continuous conduction should remain within I_S,DC = 30.6 A (T_C = 25 °C) limits to avoid thermal runaway.

How does the .XT interconnection improve thermal performance versus standard TO247 packages?

The .XT interconnection replaces traditional aluminum bond wires with copper clips and solder die attach, reducing thermal resistance by 15% (to 0.87 °C/W) and improving power cycling endurance by 3×. This directly extends lifetime in thermally demanding applications like EV chargers operating at 40–85 °C ambient with 100% duty cycle.

IMZA65R040M2HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™ Gen 2

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V, 20V

Rds On (Max) @ Id, Vgs:: 36mOhm @ 22.9A, 20V

Vgs(th) (Max) @ Id:: 5.6V @ 4.6mA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 18 V

Vgs (Max):: +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds:: 997 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 172W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-8

IMZA65R040M2HXKSA1 FAQ

1.How can I place an order for IMZA65R040M2HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA65R040M2HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA65R040M2HXKSA1 reliable?

The price and inventory of IMZA65R040M2HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA65R040M2HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA65R040M2HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA65R040M2HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA65R040M2HXKSA1?

IMZA65R040M2HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA65R040M2HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA65R040M2HXKSA1?

For technical support, including IMZA65R040M2HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA65R040M2HXKSA1 requirements.

6.How does Aetrix verify that IMZA65R040M2HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA65R040M2HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA65R040M2HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA65R040M2HXKSA1?

All IMZA65R040M2HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA65R040M2HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA65R040M2HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA65R040M2HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.