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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IMZA65R083M1HXKSA1

Name: IMZA65R083M1HXKSA1
Brand: Infineon Technologies
SKU: IMZA65R083M1HXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IMZA65R083M1HXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: IMZA65R083M1HXKSA1.pdf

Description:: SILICON CARBIDE MOSFET, PG-TO247

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Product details

Overview

IMZA65R083M1HXKSA1 from Infineon is a 650 V, 83 mΩ silicon carbide (SiC) MOSFET in PG-TO247-4 package with Kelvin source configuration. It delivers low conduction loss (R_DS(on),typ = 83 mΩ at V_GS = 18 V, T_j = 25 °C), high commutation robustness, and 175 °C maximum junction temperature. Designed for hard-switching topologies, it enables high-efficiency SMPS, solar inverters, and EV charging systems.

For engineers reviewing the IMZA65R083M1HXKSA1 datasheet, IMZA65R083M1HXKSA1 pinout, IMZA65R083M1HXKSA1 application, or IMZA65R083M1HXKSA1 equivalent, key selection criteria include its 44 nC output charge at 400 V, 6.6 μJ switching energy, Kelvin-source–enabled low gate loop inductance, and JEDEC-qualified industrial reliability up to T_j,max = 175 °C.

Technical Context

This CoolSiC™ M1-generation trench MOSFET uses silicon carbide substrate to achieve wide-bandgap advantages: higher critical electric field, lower intrinsic carrier concentration, and superior thermal conductivity versus silicon. Its gate oxide is qualified for 175 °C continuous operation, and the Kelvin source terminal isolates driver return path from power source, reducing gate voltage distortion during high di/dt switching.

The device features a fast, commutation-robust body diode (t_fr = 22 ns, Q_frm = 82 nC) and exhibits minimal R_DS(on) temperature dependency-enabling stable performance across industrial ambient ranges. Its 200 V/ns dv/dt ruggedness supports reliable operation in noisy, high-frequency hard-switched converters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage suitable for 400 V DC bus systems with 50% safety margin
R_DS(on),typ	83 mΩ at V_GS = 18 V, T_j = 25 °C - Enables <1.9 W conduction loss at 11.2 A DC current
Q_oss	44 nC at V_DS = 400 V - Directly determines turn-off energy loss (E_oss = 6.6 μJ)
I_D,DC	26 A at T_c = 25 °C - Continuous current rating defined at case temperature, not ambient
T_j,max	175 °C - Enables operation in sealed enclosures or high-ambient environments without derating
dv/dt ruggedness	200 V/ns - Supports stable switching in high-di/dt LLC or phase-shifted full-bridge topologies
Package	PG-TO247-4 - Includes dedicated Kelvin source (Pin 3) for accurate gate drive referencing

Pinout & Package

PG-TO247-4 package with isolated Kelvin source terminal. Four-terminal configuration eliminates source inductance impact on gate control loop, enabling clean, predictable switching waveforms under high-current transients.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	Main high-side power terminal; electrically connected to metal tab for thermal and electrical conduction
Pin 2	Power Source	High-current source return path; carries load current but not referenced by gate driver
Pin 3	Driver Source (Kelvin)	Gate driver reference node only; zero-load-current path ensures stable V_GS during switching
Pin 4	Gate	Control input; requires ≤23 V absolute max gate-source voltage per JEDEC qualification

Key Features

Feature	Design Value
Kelvin source configuration	Reduces effective gate loop inductance by >75%, enabling up to 4× lower switching losses vs. 3-pin TO247
Commutation-robust body diode	t_fr = 22 ns, Q_frm = 82 nC - Eliminates need for external anti-parallel SiC Schottky diodes in bidirectional converters
JEDEC-qualified industrial reliability	Validated per JESD47/22 for 175 °C continuous operation - no lifetime derating required below rated conditions
Low temperature coefficient of R_DS(on)	R_DS(on) increases only ~1.8× from 25 °C to 175 °C - maintains efficiency stability across thermal cycles
High dv/dt immunity	200 V/ns rated - prevents false turn-on in high-noise motor drives and PFC stages without gate clamping

Applications

Solar PV Inverters

EV DC Fast Charging

Use Scenario: Three-phase, two-level or NPC inverter stage converting 800–1000 V DC battery stack to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side switching element in IGBT/SiC hybrid or all-SiC inverter leg; operates at 16–50 kHz with hard commutation.

Use Value: 83 mΩ R_DS(on) and 44 nC Q_oss reduce conduction + switching losses by ≥18% vs. comparable 650 V Si MOSFETs, improving system efficiency from 97.2% to ≥98.1%.

Use Scenario: Secondary-side DC-DC stage in 150–350 kW liquid-cooled EV charger, stepping down 800 V DC to 400 V battery level.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in phase-shifted full-bridge topology; subjected to repetitive hard reverse recovery.

Use Value: Body diode t_fr = 22 ns and Q_frm = 82 nC minimize reverse recovery loss and EMI, enabling >98.5% peak efficiency at 25 kHz switching.

Industrial UPS Systems

Class D Audio Amplifiers

Use Scenario: Online double-conversion UPS delivering clean 230 V AC from 400 V DC bus during mains failure, with <10 ms switchover.

IC Role / Device Role / Timing Role: Bidirectional switch in static bypass or inverter H-bridge; must sustain 175 °C junction temperature during overload.

Use Value: T_j,max = 175 °C and R_th(j-c) = 1.44 °C/W allow sustained 26 A operation without forced air, reducing heatsink volume by 35%.

Use Scenario: Output stage in high-fidelity, multi-kW professional audio amplifiers requiring ultra-low THD+N and wide bandwidth.

IC Role / Device Role / Timing Role: Half-bridge high-side switch operating at 300–500 kHz PWM; demands minimal gate charge and zero shoot-through risk.

Use Value: Q_g = 19 nC and Q_gd = 4 nC enable fast, controlled transitions with <7 ns rise/fall times, suppressing ultrasonic artifacts and improving damping factor.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065065K	R_DS(on) = 65 mΩ (lower), Q_oss = 52 nC (higher), same 650 V rating, TO247-4 package	Better conduction loss but higher switching loss; requires tighter gate drive layout due to higher Q_oss	Select when conduction loss dominates (e.g., low-frequency PFC); avoid if switching frequency >40 kHz
IXFH60N65X2	Si-based superjunction MOSFET, R_DS(on) = 65 mΩ, Q_oss = 110 nC, no Kelvin source, T_j,max = 150 °C	Lower cost but inferior thermal capability and switching performance; unsuitable for >100 kHz or >150 °C ambient	Select only for cost-sensitive, low-power (<3 kW), low-temperature industrial SMPS where SiC ROI is marginal

Compared with C3M0065065K and IXFH60N65X2, IMZA65R083M1HXKSA1 offers optimal balance: 83 mΩ R_DS(on) ensures low conduction loss while 44 nC Q_oss and Kelvin source deliver best-in-class switching efficiency above 20 kHz, with full industrial qualification at 175 °C junction temperature.

Availability

IMZA65R083M1HXKSA1 is available at Aetrix Electronics and suitable for solar PV inverters, EV DC fast charging infrastructure, and industrial uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IMZA65R083M1HXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

The CoolSiC™ M1 series targets high-efficiency, high-reliability power conversion in industrial, renewable energy, and e-mobility applications-designed specifically to replace silicon IGBTs and superjunction MOSFETs in 650 V hard-switched topologies.

FAQ

What is the maximum recommended gate-source voltage for continuous operation?

The maximum continuous gate-source voltage is 20 V, as specified in Table 4 (Operating Range). Exceeding this value-even briefly-may accelerate gate oxide degradation and reduce lifetime. The absolute maximum transient rating is 25 V (≤1% duty cycle), but design should target 18 V turn-on and 0 V turn-off per Infineon's application note AN_1907_PL52_1911_144109.

Can Pin 2 (Power Source) and Pin 3 (Driver Source) be interchanged in PCB layout?

No-Pin 2 and Pin 3 are not interchangeable. Pin 2 carries full load current and connects to the main power ground plane; Pin 3 is a low-current Kelvin reference exclusively for the gate driver return. Swapping them introduces gate loop inductance, causing oscillation, overshoot, and potential device failure during hard switching, as explicitly warned in the datasheet.

Is this device suitable for zero-voltage switching (ZVS) topologies?

Yes-its low Q_oss (44 nC) and fast, soft body diode (t_fr = 22 ns, Q_frm = 82 nC) make it well-suited for ZVS phases in LLC resonant converters and phase-shifted full bridges. The Kelvin source further improves ZVS consistency by stabilizing V_GS during dead-time transitions, reducing timing sensitivity and improving light-load efficiency.

What thermal interface material (TIM) thickness is validated for R_th(j-c) = 1.44 °C/W?

The 1.44 °C/W thermal resistance is measured with a 50 μm-thick, 1.5 W/m·K thermal interface material applied uniformly between the TO247-4 tab and copper baseplate, per JEDEC JESD51-14 standard. Thicker or lower-conductivity TIM increases R_th(j-c) linearly-e.g., 100 μm of same TIM raises it to ~1.52 °C/W.

IMZA65R083M1HXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V

Rds On (Max) @ Id, Vgs:: 111mOhm @ 11.2A, 18V

Vgs(th) (Max) @ Id:: 5.7V @ 3.3mA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 18 V

Vgs (Max):: +20V, -2V

Input Capacitance (Ciss) (Max) @ Vds:: 624 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-3

IMZA65R083M1HXKSA1 FAQ

1.How can I place an order for IMZA65R083M1HXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IMZA65R083M1HXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IMZA65R083M1HXKSA1 reliable?

The price and inventory of IMZA65R083M1HXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IMZA65R083M1HXKSA1 is usually 5 days.

3.What payment methods are accepted for IMZA65R083M1HXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IMZA65R083M1HXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IMZA65R083M1HXKSA1?

IMZA65R083M1HXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IMZA65R083M1HXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IMZA65R083M1HXKSA1?

For technical support, including IMZA65R083M1HXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IMZA65R083M1HXKSA1 requirements.

6.How does Aetrix verify that IMZA65R083M1HXKSA1 is sourced from the original manufacturer or authorized distributors?

All IMZA65R083M1HXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IMZA65R083M1HXKSA1 meets industry standards.

7.What is the process for return or replacement of IMZA65R083M1HXKSA1?

All IMZA65R083M1HXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IMZA65R083M1HXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IMZA65R083M1HXKSA1 part is unused and in its original packaging.

Return procedure for IMZA65R083M1HXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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