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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA028N04NM3SXKSA1

Name: IPA028N04NM3SXKSA1
Brand: Infineon Technologies
SKU: IPA028N04NM3SXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA028N04NM3SXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA028N04NM3SXKSA1.pdf

Description:: TRENCH <= 40V PG-TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPA028N04NM3SXKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO220FP package, rated for 40 V V_DS, 2.8 mΩ R_DS(on) at V_GS = 10 V, and 89 A continuous drain current at T_C = 25 °C. It features low gate charge (Q_G = 90 nC), 100% avalanche tested, and is optimized for high-frequency synchronous rectification in DC-DC converters and motor drives.

For engineers reviewing the IPA028N04NM3SXKSA1 datasheet, IPA028N04NM3SXKSA1 pinout, IPA028N04NM3SXKSA1 application, or IPA028N04NM3SXKSA1 equivalent, key selection criteria include R_DS(on) stability over temperature, Q_g × R_DS(on) figure-of-merit, avalanche ruggedness, thermal resistance (R_thJC = 3.9 °C/W), and TO-220FP drain-connected package layout compatibility.

Technical Context

This OptiMOSTM 3-generation power transistor uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its gate threshold voltage (V_GS(th) = 2–4 V) supports standard 10 V gate drive, and its Q_gd = 11 nC and C_iss = 7.3–9.5 nF enable efficient hard-switching up to several hundred kHz.

The device integrates a robust body diode with Q_rr = 80 nC and V_SD = 0.87 V at 38 A, making it suitable for synchronous rectifier operation where reverse recovery loss must be minimized. Thermal design is supported by a low junction-to-case resistance of 3.9 °C/W and validated JEDEC qualification per AEC-Q101 stress test conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V/48 V bus applications
R_DS(on), max	2.8 mΩ at V_GS = 10 V, I_D = 89 A - Enables <1 W conduction loss at 30 A in high-current POL stages
Q_G	90 nC - Low total gate charge reduces driver power and enables faster turn-on/turn-off
E_AS	150 mJ - Avalanche energy rating supports unclamped inductive switching in motor control
R_thJC	3.9 °C/W - Enables 38 W power dissipation at 25 °C case temperature with minimal heatsink
Q_OSS	73 nC - Output charge directly impacts turn-off loss in hard-switched topologies
V_GS(th)	2–4 V - Ensures reliable enhancement-mode turn-on with standard logic-level gate drivers

Pinout & Package

Package: PG-TO220FP (FullPAK), thermally enhanced variant with exposed drain pad on leadframe; pin 2 is drain (electrically connected to tab), pin 1 is gate, pin 3 is source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires low-inductance routing due to 90 nC Q_G and 1.9–2.9 Ω internal R_G
Pin 2 (Drain)	High-side power node	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground
Pin 3 (Source)	Return path / reference node	Serves as local ground reference for gate drive; critical for minimizing common-source inductance in high-dI/dt switching

Key Features

Feature	Design Value
Optimized FOM (Q_G × R_DS(on))	252 nC·mΩ - Enables high-efficiency operation in 300–500 kHz DC-DC converters
100% avalanche tested	Rated E_AS = 150 mJ - Guarantees ruggedness under transient overvoltage or inductive kickback
Pb-free & halogen-free	Complies with RoHS and IEC61249-2-21 - Supports environmentally compliant industrial and automotive production
Low Q_gd/Q_g ratio	12% (11/90 nC) - Reduces Miller-induced shoot-through risk in half-bridge configurations

Applications

Server VRM

Industrial Motor Drive

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter, operating at 300–600 kHz switching frequency.

Use Value: 2.8 mΩ R_DS(on) and 73 nC Q_OSS reduce conduction and turn-off losses, improving efficiency by ≥0.8% at 60 A load versus prior-gen 3.5 mΩ devices.

Use Scenario: Half-bridge output stage in 0.5–2 kW BLDC motor inverters for HVAC and pumps.

IC Role / Device Role / Timing Role: Low-side switch with integrated body diode used for PWM-controlled phase current commutation.

Use Value: 150 mJ E_AS and 3.9 °C/W R_thJC allow safe operation during short-circuit events and sustained 89 A peak currents without derating.

Telecom PSU

Automotive DC-DC Converter

Use Scenario: Primary-side switch in 48 V input telecom rectifiers delivering 1.2 kW output.

IC Role / Device Role / Timing Role: High-side switch in active clamp forward or LLC resonant topology.

Use Value: 90 nC Q_G and 11 nC Q_gd minimize gate drive loss and improve ZVS margin, enabling >96% full-load efficiency.

Use Scenario: 12 V–48 V bidirectional DC-DC converter in 48 V mild hybrid vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous rectification stage.

Use Value: 0.87 V V_SD and 80 nC Q_rr reduce reverse recovery loss and forward conduction loss, lowering thermal stress in confined under-hood space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB027N04LGATMA1	Same V_DS (40 V), lower R_DS(on) (2.7 mΩ), higher Q_G (105 nC), PG-TDSON8 package	Surface-mount alternative requiring PCB redesign; better thermal performance in forced-air cooling but no isolated tab	Select when board space is constrained and thermal interface to heatsink is via soldered copper area rather than mechanical mounting.
IRL40B213TRPBF	Higher R_DS(on) (3.1 mΩ), lower Q_G (72 nC), TO-220AB package, non-avalanche-rated	Lacks E_AS rating and JEDEC qualification; unsuitable for inductive loads or automotive environments	Acceptable only in cost-sensitive, low-reliability consumer power supplies with clamped inductive loads.

Compared with IPB027N04LGATMA1 and IRL40B213TRPBF, IPA028N04NM3SXKSA1 delivers optimal balance of low R_DS(on), moderate Q_G, proven avalanche ruggedness, and through-hole mechanical robustness-making it preferred for industrial and telecom systems requiring field reliability and serviceability.

Availability

IPA028N04NM3SXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and automotive 48 V DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPA028N04NM3SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This device belongs to the OptiMOSTM 3 family-designed specifically for high-efficiency, high-current power conversion in server, telecom, and industrial applications where low R_DS(on), fast switching, and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPA028N04NM3SXKSA1 supports 63 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by the 3.9 °C/W R_thJC and 175 °C maximum junction temperature, requiring appropriate heatsinking for sustained high-current operation.

Is this MOSFET suitable for synchronous rectification in a 48 V to 12 V buck converter?

Yes-its 40 V V_DS, 2.8 mΩ R_DS(on), 0.87 V body diode forward voltage, and 80 nC Q_rr make it well-suited for secondary-side synchronous rectification in 48 V input buck converters. The low Q_gd/Q_g ratio also minimizes risk of false turn-on during high dV/dt transitions.

Does the PG-TO220FP package provide electrical isolation between the drain tab and mounting surface?

No-the drain (pin 2) is internally connected to the metal tab in the PG-TO220FP package. Electrical isolation from the heatsink must be achieved using insulating pads or shoulder washers. Failure to isolate will short the drain to system ground if the heatsink is grounded.

What is the typical gate plateau voltage and why does it matter?

The gate plateau voltage is 5.3 V (Table 6), representing the Miller region where the gate voltage remains relatively constant during turn-on/turn-off while the drain voltage transitions. This value determines the minimum gate drive voltage needed to ensure full enhancement and influences gate driver selection-especially for bootstrap-based high-side drivers operating near V_GS(th) limits.

IPA028N04NM3SXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 89A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 89A, 10V

Vgs(th) (Max) @ Id:: 4V @ 95µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9500 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 38W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA028N04NM3SXKSA1 FAQ

1.How can I place an order for IPA028N04NM3SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA028N04NM3SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA028N04NM3SXKSA1 reliable?

The price and inventory of IPA028N04NM3SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA028N04NM3SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA028N04NM3SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA028N04NM3SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA028N04NM3SXKSA1?

IPA028N04NM3SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA028N04NM3SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA028N04NM3SXKSA1?

For technical support, including IPA028N04NM3SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA028N04NM3SXKSA1 requirements.

6.How does Aetrix verify that IPA028N04NM3SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA028N04NM3SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA028N04NM3SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA028N04NM3SXKSA1?

All IPA028N04NM3SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA028N04NM3SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA028N04NM3SXKSA1 part is unused and in its original packaging.

Return procedure for IPA028N04NM3SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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