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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA028N08N3GXKSA1

Name: IPA028N08N3GXKSA1
Brand: Infineon Technologies
SKU: IPA028N08N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA028N08N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA028N08N3GXKSA1.pdf

Description:: MOSFET N-CH 80V 89A TO220-FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPA028N08N3GXKSA1 from Infineon Technologies is an N-channel 80 V, 2.8 mΩ logic-level power MOSFET in PG-TO-220-FP package, rated for 89 A continuous drain current at T_C = 25 °C and optimized for high-frequency DC/DC converters and synchronous rectification. It features 1430 mJ single-pulse avalanche energy, 155–206 nC total gate charge, and 100% avalanche-tested ruggedness.

For engineers reviewing the IPA028N08N3GXKSA1 datasheet, IPA028N08N3GXKSA1 pinout, IPA028N08N3GXKSA1 application, or IPA028N08N3GXKSA1 equivalent, key selection criteria include R_DS(on) vs. gate drive voltage (V_GS = 6 V / 10 V), thermal resistance (R_thJC = 3.6 K/W), and diode reverse recovery performance (Q_rr = 181 nC, t_rr = 78 ns) in hard-switched topologies.

Technical Context

This OptiMOS™3 device uses trench-gate superjunction technology to achieve low gate charge × R_DS(on) figure-of-merit (FOM), enabling efficient operation above 300 kHz in buck, boost, and LLC converters. Its 2.8 mΩ R_DS(on) at V_GS = 10 V and 2.8–4.2 mΩ at V_GS = 6 V supports both 5 V and 3.3 V gate drivers without level-shifting.

The integrated body diode exhibits low forward voltage (V_SD = 0.9–1.2 V at I_F = 89 A, T_j = 25 °C) and fast, soft recovery (t_rr = 78 ns, Q_rr = 181 nC), reducing switching losses and EMI in synchronous rectifier stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V input bus applications with 20 % margin
R_DS(on), max	2.8 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 89 A in TO-220-FP package
I_D, cont.	89 A at T_C = 25 °C - Limited by package thermal resistance (R_thJC = 3.6 K/W)
Q_g	155–206 nC - Determines gate driver power requirement and switching speed in 300–1000 kHz designs
E_AS	1430 mJ - Confirmed single-pulse avalanche ruggedness for overvoltage transients up to 80 V
Q_rr	181 nC - Low reverse recovery charge reduces turn-on loss of high-side switch in sync-rectified topologies
C_iss	10.7–14.2 nF - Input capacitance impacts gate drive loop stability and Miller effect during dV/dt transitions

Pinout & Package

PG-TO-220-FP package: isolated tab (drain), 3-pin through-hole mounting with bent leads; drain-connected metal tab enables direct heatsink attachment with electrical isolation.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or low-side switch source in half-bridge
Pin 2 (Gate)	Control input	Receives PWM signal; requires 10 V min for full enhancement; gate resistance R_G = 2.7 Ω internal
Pin 3 (Drain)	High-side power node	Connected to metal tab; must be electrically isolated from heatsink unless system ground referenced

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	Enables >95 % efficiency in 48 V → 12 V/50 A DC/DC converters operating at 500 kHz
100 % avalanche tested	Guarantees robustness against inductive switching spikes without derating in industrial motor drives
Logic-level gate threshold (V_GS(th) = 2.0–3.5 V)	Compatible with 3.3 V and 5 V microcontroller GPIOs without external level shifters
Low Q_gd/Q_g ratio (~19 %)	Reduces Miller-induced shoot-through risk and improves hard-switching reliability
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and JEDEC J-STD-020/JESD22 standards for automotive and industrial use

Applications

Server VRM

Industrial SMPS

Use Scenario: 48 V input, 12 V/60 A output buck converter in AI accelerator rack power supply.

IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET with 500 kHz switching frequency and 100 ns dead-time control.

Use Value: 2.8 mΩ R_DS(on) and 181 nC Q_rr reduce conduction + switching losses by 1.2 W vs. legacy 5 mΩ devices.

Use Scenario: 24 V input, 5 V/30 A isolated flyback secondary-side synchronous rectifier.

IC Role / Device Role / Timing Role: Low-V_GS(th) N-channel switch replacing Schottky diode to improve light-load efficiency.

Use Value: 0.9 V V_SD and soft t_rr = 78 ns minimize EMI and eliminate snubber requirements.

Telecom PSU

EV Onboard Charger

Use Scenario: 380 V DC-link to 12 V auxiliary supply using active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side switch with 80 V rating used in cascode configuration with SiC driver.

Use Value: 1430 mJ E_AS withstands 100 V overshoot during clamp release without failure.

Use Scenario: 400 V battery-fed bidirectional CLLC resonant converter secondary side.

IC Role / Device Role / Timing Role: Synchronous rectifier operating in ZVS mode with 6 V gate drive from transformer-coupled driver.

Use Value: R_DS(on) = 2.8 mΩ at V_GS = 6 V ensures <1.1 W loss at 80 A peak current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N8F7AG	R_DS(on) = 2.2 mΩ @ 10 V, Q_g = 195 nC, PG-TO-220FP package, same V_DS	Lower R_DS(on) but higher Q_g; requires stronger gate driver	Prefer when conduction loss dominates and gate drive capability ≥2 A peak is available
IRF1404ZLPbF	R_DS(on) = 4.7 mΩ @ 10 V, Q_g = 131 nC, TO-220AB package, no isolation tab	Higher on-resistance, lower gate charge, non-isolated tab limits heatsinking flexibility	Select only if cost sensitivity outweighs thermal performance and isolation needs

Compared with STL220N8F7AG and IRF1404ZLPbF, IPA028N08N3GXKSA1 delivers optimal balance of low R_DS(on), moderate Q_g, and isolated tab-making it preferred for thermally constrained, high-reliability 48–60 V DC/DC systems where layout space and heatsink isolation matter.

Availability

IPA028N08N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial SMPS, telecom PSUs, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPA028N08N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with >50 years of MOSFET innovation and ISO/TS 16949-certified manufacturing.

This device belongs to the OptiMOS™3 product line-designed specifically for high-efficiency, high-frequency power conversion in datacenter, industrial, and renewable energy systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C per JEDEC qualification. For reliable long-term operation, design for T_j ≤ 150 °C under worst-case ambient and power dissipation conditions. Thermal derating begins at T_C > 25 °C, with I_D reduced to 62 A at T_C = 100 °C due to R_thJC = 3.6 K/W and package current limitation.

Is the drain tab electrically isolated in the PG-TO-220-FP package?

Yes-the PG-TO-220-FP package features an electrically isolated drain tab, allowing direct mechanical attachment to a heatsink without additional insulating hardware. This differs from standard TO-220AB, where the tab is internally connected to drain and requires mica or silicone insulator pads.

Can IPA028N08N3GXKSA1 be driven directly from a 3.3 V microcontroller GPIO?

Yes-its gate threshold voltage range is 2.0–3.5 V, and it achieves usable R_DS(on) (≤4.2 mΩ) at V_GS = 6 V. However, full enhancement (2.4–2.8 mΩ) requires ≥10 V; for 3.3 V drive, use in low-duty-cycle or paralleled configurations with careful thermal analysis.

Does this MOSFET include an integrated ESD protection diode on the gate?

No-IPA028N08N3GXKSA1 does not integrate gate ESD protection. Gate-source leakage is specified as ≤100 nA at V_GS = 20 V, and the gate oxide is rated for ±20 V. External 10–22 Ω series gate resistor and TVS clamping are recommended for board-level ESD robustness in automated assembly environments.

IPA028N08N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 89A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.8mOhm @ 89A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 270µA

Gate Charge (Qg) (Max) @ Vgs:: 206 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14200 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA028N08N3GXKSA1 FAQ

1.How can I place an order for IPA028N08N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA028N08N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA028N08N3GXKSA1 reliable?

The price and inventory of IPA028N08N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA028N08N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA028N08N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA028N08N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA028N08N3GXKSA1?

IPA028N08N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA028N08N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA028N08N3GXKSA1?

For technical support, including IPA028N08N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA028N08N3GXKSA1 requirements.

6.How does Aetrix verify that IPA028N08N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA028N08N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA028N08N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA028N08N3GXKSA1?

All IPA028N08N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA028N08N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA028N08N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPA028N08N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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