Infineon Technologies IPA029N06NXKSA1

Overview

IPA029N06NXKSA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET optimized for high-efficiency synchronous rectification in SMPS, with 60 V V_DS, 2.9 mΩ R_DS(on) max at V_GS = 10 V, 84 A continuous drain current, and 100% avalanche tested. It uses TO-220-FP package with isolated drain pin for thermal and safety-critical board layouts.

For engineers reviewing the IPA029N06NXKSA1 datasheet, IPA029N06NXKSA1 pinout, IPA029N06NXKSA1 application, or IPA029N06NXKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, Q_g/Q_oss trade-offs for high-frequency switching, avalanche ruggedness, and thermal resistance (R_thJC = 2.9 K/W) in constrained heatsink environments.

Technical Context

This device implements a trench-based OptiMOS™ process for low conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2.1–3.3 V) enables robust drive compatibility with standard 5 V or 10 V controllers, while its low Q_gd (10–15 nC) and Q_oss (65–82 nC) support fast, low-loss transitions in hard-switched and resonant topologies.

The integrated body diode features low V_SD (0.85–1.2 V @ 32 A) and fast trr (36–58 ns), making it suitable for bidirectional current handling in LLC and phase-shifted full-bridge converters where reverse recovery behavior directly impacts efficiency and EMI.

Key Specifications

Pinout & Package

IPA029N06NXKSA1 is housed in a TO-220-FP (Full-Pak) package with isolated drain tab, enabling direct mounting to heatsinks without insulating hardware while maintaining electrical isolation between drain and mounting surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with IPB029N06N and STL220N6F7, IPA029N06NXKSA1 uniquely combines isolated-drain packaging, industry-leading R_thJC, and tightly specified Q_oss/Q_gd - making it optimal for thermally constrained, safety-critical, high-frequency synchronous rectification where layout simplicity and avalanche margin are non-negotiable.

Availability

IPA029N06NXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, telecom rectifiers, and EV onboard charger auxiliary supplies requiring stable component supply and long-term lifecycle support.

Supply support for IPA029N06NXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This part belongs to the OptiMOS™ 60 V power transistor product line, engineered specifically for high-efficiency, high-reliability switching in server, telecom, and industrial power conversion systems demanding low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The absolute maximum junction temperature is 175 °C. At T_C = 100 °C, the continuous drain current drops to 59 A (from 84 A at 25 °C), per the derating curve in the datasheet. This reflects thermal limitation of the TO-220-FP package, not silicon capability - proper heatsinking is essential to sustain rated current.

Is IPA029N06NXKSA1 suitable for use as a high-side switch in a half-bridge configuration?

Yes, its isolated drain tab and 60 V V_DS rating support high-side operation in half-bridge topologies up to 48 V bus voltage. However, gate drive must provide sufficient negative turn-off bias (≥−5 V) and fast rise/fall times to manage shoot-through risk, especially given its 56 nC total gate charge.

How does the body diode's reverse recovery performance compare to Schottky alternatives?

The body diode has trr = 36–58 ns and Q_rr = 31 nC - significantly faster than standard planar MOSFETs but slower than SiC Schottkys. In 300–500 kHz SMPS, this enables acceptable efficiency without external diode paralleling, though Schottkys remain preferred for ultra-low-loss, zero-recovery applications.

Does the "XKSA1" suffix indicate any functional or reliability difference versus "IPA029N06N"?

Yes - the "XKSA1" suffix denotes the TO-220-FP package variant with isolated drain and full JEDEC qualification per J-STD-20/JESD22. It is not a generic marking; it specifies the exact package construction, thermal performance, and test flow required for industrial and telecom applications with stringent safety and lifetime requirements.