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Infineon Technologies IPA030N10N3GXKSA1

Part No.:
IPA030N10N3GXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA030N10N3GXKSA1.pdf
Description:
MOSFET N-CH 100V 79A TO220-FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,345

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Product details

Overview

IPA030N10N3GXKSA1 from Infineon Technologies is a 100 V, 79 A N-channel enhancement-mode MOSFET in PG-TO220-FP package, featuring 2.6 mΩ RDS(on) at VGS = 10 V, 175 °C maximum junction temperature, and optimized gate charge (Qg = 155–206 nC) for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPA030N10N3GXKSA1 datasheet, IPA030N10N3GXKSA1 pinout, IPA030N10N3GXKSA1 application, or IPA030N10N3GXKSA1 equivalent, key selection criteria include RDS(on) vs. thermal resistance (RthJC = 3.7 K/W), diode recovery performance (trr = 80 ns, Qrr = 190 nC), and safe operating area under pulsed drain current (ID,pulse = 316 A).

Technical Context

This OptiMOSTM3 power transistor uses trench-gate silicon technology to achieve low conduction loss and fast switching dynamics. Its gate threshold voltage (VGS(th) = 2.0–3.5 V) enables robust turn-on with standard 10 V gate drivers, while the 4.2 V gate plateau voltage supports stable Miller region control during hard switching.

The integrated body diode delivers 70 A continuous forward current and exhibits low reverse recovery charge (Qrr = 190 nC), making it suitable for synchronous buck topologies where reverse recovery losses dominate efficiency at light-to-moderate loads.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - Supports 48 V input bus designs with 2× safety margin against transients.
RDS(on) max3 mΩ - Enables <1.5 W conduction loss at 79 A, critical for high-current POL converters.
ID continuous79 A @ TC = 25 °C - Requires ≥6 cm² copper pour on FR4 PCB for thermal compliance.
Qg155–206 nC - Determines gate driver power requirement and switching loss trade-off.
trr80 ns - Limits diode reverse recovery energy and EMI generation in hard-switched SMPS.
RthJC3.7 K/W - Defines minimum heatsink interface thermal resistance for 175 °C Tj operation.
EAS1000 mJ - Specifies single-pulse avalanche ruggedness for overvoltage fault handling.

Pinout & Package

IPA030N10N3GXKSA1 is housed in PG-TO220-FP package: isolated tab, vertical mounting, 3-pin through-hole configuration with drain-connected tab for direct heatsinking.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalReference node for gate drive; connects to low-side switch node or ground return path.
Pin 2 (Gate)Control inputHigh-impedance MOSFET gate requiring <200 nC total charge for full enhancement.
Pin 3 (Drain)Power output / Heatsink interfaceInternally connected to metal tab; must be electrically isolated from chassis unless system design permits common-drain topology.

Key Features

FeatureDesign Value
Optimized FOM (Qg × RDS(on))~400–600 nC·mΩ - Balances switching loss and conduction loss in 100–500 kHz DC-DC stages.
175 °C rated junction temperatureEnables operation in sealed enclosures or high-ambient industrial environments without derating.
Low Qrr (190 nC) and trr (80 ns)Reduces cross-conduction loss and EMI in synchronous rectifier mode versus standard MOSFETs.
Pb-free, halogen-free, RoHS-compliantMeets IPC-J-STD-020 reflow profile and IEC61249-2-21 material restrictions for green manufacturing.

Applications

Server VRMsIndustrial Motor Drives

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers with strict airflow constraints.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter, switching at 300–600 kHz.

Use Value: 2.6 mΩ RDS(on) minimizes I²R loss at >60 A per phase, while 3.7 K/W RthJC enables compact heatsink integration.

Use Scenario: Inverter leg switching in 3 kW servo drives with regenerative braking capability.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter, conducting 70 A continuous motor current.

Use Value: 1000 mJ EAS withstands inductive kickback during rapid deceleration; 175 °C rating avoids thermal shutdown in enclosed cabinets.

Telecom RectifiersEV Onboard Chargers

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifier modules operating at 200 kHz.

IC Role / Device Role / Timing Role: Output rectifier replacing Schottky diodes to improve efficiency above 30 A load.

Use Value: Qrr = 190 nC and trr = 80 ns reduce reverse recovery loss by >40% versus legacy MOSFETs, boosting full-load efficiency to >96%.

Use Scenario: DC-DC stage in bidirectional OBC converting 400 V battery to 12 V auxiliary supply.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology, operating at 100–200 kHz.

Use Value: 316 A pulsed drain current rating supports peak power bursts during cold cranking; 100 V VDS accommodates 400 V bus transients with margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N10F7RDS(on) = 2.2 mΩ (lower), Qg = 190 nC (higher), TO-220FP packageBetter conduction loss but higher gate drive loss; requires stronger gate driver.Prefer when thermal budget allows lower RDS(on) and gate drive capability is available.
IRF3205PBFRDS(on) = 8.0 mΩ (higher), Qg = 71 nC (lower), TO-220 packageHigher conduction loss but simpler gate drive; no isolation between tab and drain.Acceptable only in cost-sensitive, low-frequency (<100 kHz), non-isolated designs with ample thermal margin.

Compared with STL220N10F7 and IRF3205PBF, IPA030N10N3GXKSA1 delivers optimal balance of low RDS(on), moderate Qg, and isolated drain tab-critical for high-efficiency, high-reliability 100 V synchronous rectifiers where thermal management and layout isolation are constrained.

Availability

IPA030N10N3GXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPA030N10N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap device technologies.

This device belongs to the OptiMOSTM3 family-designed specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial SMPS applications where low RDS(on) and fast switching are essential.

FAQ

Is IPA030N10N3GXKSA1 suitable for synchronous rectification in a 48 V input buck converter?

Yes. With 2.6 mΩ RDS(on) at 10 V gate drive and 80 ns reverse recovery time, it reduces conduction and recovery losses significantly versus Schottky diodes in 48 V systems. Its 100 V VDS rating provides sufficient margin for transient spikes up to 75 V, and the isolated drain tab simplifies heatsinking in tight layouts.

What is the maximum PCB copper area required for thermal compliance at 79 A continuous current?

Per datasheet Figure 2, 6 cm² of 70 µm thick copper on one layer (FR4, vertical orientation, still air) is specified for 79 A continuous current at TC = 25 °C. For higher ambient temperatures or forced airflow, thermal simulation using RthJC = 3.7 K/W and board-level RthCA is recommended to validate junction temperature.

Does IPA030N10N3GXKSA1 have an integrated ESD protection diode on the gate?

No. The datasheet does not specify gate ESD protection. External gate protection (e.g., 12 V Zener clamp between gate and source) is recommended for handling during assembly and in systems exposed to human contact or cable discharge events, especially given its ±20 V VGS rating.

Can IPA030N10N3GXKSA1 replace IRF3205PBF in existing designs without layout changes?

Physical pinout is identical (TO-220FP), but the drain tab is electrically isolated in IPA030N10N3GXKSA1 versus connected in IRF3205PBF. Layout modification is required to maintain isolation-either by insulating the heatsink or redesigning the mounting interface-to avoid shorting the drain to chassis ground.

IPA030N10N3GXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
79A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
3mOhm @ 79A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:
206 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
14800 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
41W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-FP

IPA030N10N3GXKSA1 FAQ

1.How can I place an order for IPA030N10N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA030N10N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA030N10N3GXKSA1 reliable?

The price and inventory of IPA030N10N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA030N10N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA030N10N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA030N10N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA030N10N3GXKSA1?

IPA030N10N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA030N10N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA030N10N3GXKSA1?

For technical support, including IPA030N10N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA030N10N3GXKSA1 requirements.

6.How does Aetrix verify that IPA030N10N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA030N10N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA030N10N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA030N10N3GXKSA1?

All IPA030N10N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA030N10N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA030N10N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPA030N10N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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