Infineon Technologies IPA040N06NM5SXKSA1

Overview

IPA040N06NM5SXKSA1 from Infineon Technologies is a 60 V, 4 mΩ N-channel enhancement-mode MOSFET in PG-TO220 FP package with drain-connected pin 2, gate on pin 1, and source on pin 3. It delivers 72 A continuous drain current at TC = 25 °C, features 44 nC output charge (Qoss), 38 nC total gate charge (Qg), and is qualified per JEDEC standards for industrial power conversion.

For engineers reviewing the IPA040N06NM5SXKSA1 datasheet, IPA040N06NM5SXKSA1 pinout, IPA040N06NM5SXKSA1 application, or IPA040N06NM5SXKSA1 equivalent, key selection criteria include RDS(on) stability over temperature, avalanche energy rating (77 mJ), gate charge × RDS(on) figure-of-merit, and TO-220 FP thermal performance in high-frequency synchronous rectification.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology optimized for low conduction and switching losses in DC-DC converters and motor drives. Its 4.9 V gate plateau voltage and 13 nC gate-to-source charge (Qgs) support fast, controlled turn-on with minimal Miller-induced oscillation.

The MOSFET integrates a robust body diode with 33 ns reverse recovery time (trr) and 28 nC reverse recovery charge (Qrr), enabling reliable synchronous rectification without external Schottky diodes. Thermal resistance junction-to-case is 4.2 °C/W, confirming suitability for heatsink-mounted high-power operation.

Key Specifications

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated drain tab, pin 2 connected to drain for direct heatsink mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with IPB040N06N3 G and STL220N6F7, IPA040N06NM5SXKSA1 offers optimal balance of ultra-low RDS(on), proven avalanche ruggedness, and through-hole mechanical reliability-making it preferred for high-current, thermally constrained industrial power stages where manual heatsink attachment is standard.

Availability

IPA040N06NM5SXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom PSUs, and EV onboard chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPA040N06NM5SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-frequency power conversion in server, telecom, and industrial motor control applications where low RDS(on) and fast switching are critical.

FAQ

What is the maximum safe operating temperature for IPA040N06NM5SXKSA1?

The device supports junction temperatures from –55 °C to +175 °C per IEC climatic category 55/175/56. At TC = 100 °C, continuous drain current derates to 51 A. Thermal resistance junction-to-case is 4.2 °C/W, so heatsink design must maintain case temperature ≤100 °C under full 72 A load to stay within safe SOA limits.

Is IPA040N06NM5SXKSA1 suitable for synchronous rectification in LLC resonant converters?

Yes-its 33 ns reverse recovery time (trr), 28 nC Qrr, and low 4.0 mΩ RDS(on) make it ideal for secondary-side synchronous rectification in LLC topologies operating up to 1 MHz. The body diode's soft recovery behavior minimizes voltage overshoot and EMI during zero-voltage switching transitions.

Does IPA040N06NM5SXKSA1 require gate resistors for stability?

A series gate resistor of 3–10 Ω is recommended to dampen ringing caused by PCB trace inductance and internal 1.3 Ω gate resistance. Data sheet switching times (e.g., 14 ns td(on)) were measured with RG,ext = 3 Ω; increasing resistance beyond 10 Ω significantly slows turn-on and increases switching loss without improving reliability.

How does the PG-TO220 FP package differ from standard TO-220 in thermal performance?

PG-TO220 FP features an isolated drain tab with enhanced copper thickness and optimized die attach, achieving 4.2 °C/W RthJC-up to 15% better than legacy TO-220. Unlike standard TO-220, its pin 2 (drain) is internally bonded to the tab, eliminating insulating washers and reducing thermal interface resistance in bolt-down heatsink configurations.