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Infineon Technologies IPA041N04NGXKSA1

Part No.:
IPA041N04NGXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA041N04NGXKSA1.pdf
Description:
MOSFET N-CH 40V 70A TO220-FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:10

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Product details

Overview

IPA041N04NGXKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-efficiency DC/DC converters, featuring 40 V VDS, 4.1 mΩ RDS(on) max at VGS = 10 V, 70 A continuous drain current (TC = 25 °C), and TO-220-FP package with isolated drain tab. It serves as a primary synchronous rectifier or high-side switch in 12 V–24 V industrial power supplies.

For engineers reviewing the IPA041N04NGXKSA1 datasheet, IPA041N04NGXKSA1 pinout, IPA041N04NGXKSA1 application, or IPA041N04NGXKSA1 equivalent, key selection criteria include RDS(on) × Qg figure-of-merit, avalanche ruggedness (EAS = 70 mJ), thermal resistance (RthJC = 4.3 K/W), and gate plateau voltage (5.1 V) for PWM timing margin analysis.

Technical Context

This OptiMOS™3 device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching speed. Its 3.5 mΩ typical RDS(on) and 42–56 nC total gate charge enable high-frequency operation in synchronous buck converters up to 1 MHz.

The MOSFET integrates a robust body diode with 19 nC reverse recovery charge (Qrr) and 0.87 V forward voltage (VSD) at 29 A, supporting efficient hard-switched and quasi-resonant topologies without external freewheeling diodes.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage for 12 V/24 V bus applications with 2× safety margin
RDS(on), max4.1 mΩ at VGS = 10 V - Enables ≤1.5 W conduction loss at 60 A in TO-220-FP package
ID, cont.70 A at TC = 25 °C - Supports high-current output stages without parallel devices
EAS70 mJ - Single-pulse avalanche energy rating ensures reliability under inductive turn-off stress
Qg42–56 nC - Low gate drive power requirement compatible with standard 1-A gate drivers
RthJC4.3 K/W - Enables direct heatsink mounting for thermal management in compact power modules
VGS(th)2–4 V - Normal-level gate threshold compatible with 3.3 V/5 V logic-level controllers

Pinout & Package

IPA041N04NGXKSA1 is housed in PG-TO220-FP (TO-220 Full-Pak) package with electrically isolated drain tab for simplified heatsinking and enhanced creepage/clearance. The plastic body provides reinforced insulation between drain and source terminals.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputReceives PWM signal; requires <2.4 Ω external gate resistor to limit dV/dt-induced shoot-through risk
Pin 2 (Drain)High-side power nodeConnected to drain tab; electrically isolated for direct heatsink mounting without insulator
Pin 3 (Source)Power return / referenceServes as local ground reference for gate driver; ties to PCB source plane or low-side switch source

Key Features

FeatureDesign Value
Optimized FOM (RDS(on) × Qg)≤0.17 Ω·nC - Reduces combined conduction + switching loss in 300–500 kHz DC/DC designs
100% Avalanche TestedSingle-pulse EAS = 70 mJ - Guarantees ruggedness against inductive load transients without derating
Low Qgd/Qg ratio5.3/56 ≈ 9.5% - Minimizes Miller-induced gate oscillation during high-dV/dt commutation
Pb-free & Halogen-freeRoHS-compliant plating per IEC61249-2-21 - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1)

Applications

Server VRMsIndustrial Motor Drives

Use Scenario: Point-of-load regulation for CPU/GPU core voltage in 1U rack servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter operating at 500 kHz.

Use Value: 4.1 mΩ RDS(on) reduces conduction loss by 35% vs. legacy 6 mΩ MOSFETs, enabling >95% efficiency at 100 A output.

Use Scenario: Inverter half-bridge leg in 0.75 kW brushless DC motor drives.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting regeneration current.

Use Value: 19 nC Qrr and 0.87 V VSD minimize diode conduction loss and reverse recovery noise during PWM dead-time.

Telecom RectifiersEV Onboard Chargers

Use Scenario: Secondary-side synchronous rectification in 48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Output rectifier in LLC resonant converter with ZVS operation.

Use Value: Isolated drain tab allows direct heatsink mounting on aluminum chassis, reducing thermal interface resistance by 2.1 K/W.

Use Scenario: Primary-side high-frequency switch in bidirectional AC/DC OBC stage.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in interleaved PFC front-end with 100 kHz operation.

Use Value: 70 A ID rating supports 3.3 kW continuous power without paralleling, simplifying layout and BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB041N04LGATMA1Same die, PG-TO263-3 (D²PAK) package; RthJC = 3.5 K/W; no isolated drainRequires insulated heatsink mounting; better suited for surface-mount PCBs with large copper areaSelect when automated SMT assembly and lower thermal resistance outweigh through-hole mechanical robustness
IRF1404ZPBFLegacy TrenchFET; RDS(on) = 4.7 mΩ; Qg = 131 nC; EAS not ratedLimited to ≤200 kHz switching; unsuitable for high-density VRMs due to higher switching lossSelect only for cost-sensitive, low-frequency (<100 kHz), non-avalanche-critical applications

Compared with IPB041N04LGATMA1, IPA041N04NGXKSA1 offers superior mechanical stability and isolation in high-vibration environments; compared with IRF1404ZPBF, it delivers 28% lower gate drive loss and guaranteed avalanche capability essential for automotive-grade OBCs.

Availability

IPA041N04NGXKSA1 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom rectifiers, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPA041N04NGXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™3 family, engineered specifically for high-efficiency, high-power-density DC/DC conversion in datacenter, industrial, and transportation power systems.

FAQ

What is the maximum allowable gate-source voltage for IPA041N04NGXKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation above +12 V or below –5 V risks permanent gate oxide damage. For reliable PWM control, maintain VGS between 4.5 V (to ensure full enhancement) and 10 V (to avoid excessive gate current and overshoot).

Does IPA041N04NGXKSA1 require a gate resistor, and what value is recommended?

Yes, an external gate resistor is required to dampen ringing and control slew rate. With typical gate resistance of 1.6–2.4 Ω and 56 nC total gate charge, a 1.6 Ω resistor limits peak gate current to ~6.25 A and achieves ~16 ns turn-on delay, matching the datasheet test condition.

Can IPA041N04NGXKSA1 be used in linear (analog) mode for hot-swap or inrush limiting?

No - this MOSFET is not characterized or qualified for linear-mode operation. Its Safe Operating Area (SOA) curve shows limited DC capability beyond 10 A at VDS > 10 V, and thermal runaway risk increases rapidly above Tj = 125 °C in analog bias.

Is the drain tab electrically isolated from the source pin in IPA041N04NGXKSA1?

Yes - the TO-220-FP package features a fully isolated drain tab, allowing direct mounting to a grounded heatsink without insulating hardware. This reduces thermal resistance by eliminating thermal interface material layers and improves system-level EMI performance.

IPA041N04NGXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 70A, 10V
Vgs(th) (Max) @ Id:
4V @ 45µA
Gate Charge (Qg) (Max) @ Vgs:
56 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4500 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
35W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-FP

IPA041N04NGXKSA1 FAQ

1.How can I place an order for IPA041N04NGXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA041N04NGXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA041N04NGXKSA1 reliable?

The price and inventory of IPA041N04NGXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA041N04NGXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA041N04NGXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA041N04NGXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA041N04NGXKSA1?

IPA041N04NGXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA041N04NGXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA041N04NGXKSA1?

For technical support, including IPA041N04NGXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA041N04NGXKSA1 requirements.

6.How does Aetrix verify that IPA041N04NGXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA041N04NGXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA041N04NGXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA041N04NGXKSA1?

All IPA041N04NGXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA041N04NGXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA041N04NGXKSA1 part is unused and in its original packaging.

Return procedure for IPA041N04NGXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA041N04NGXKSA1 Tags

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