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Infineon Technologies IPA050N10NM5SXKSA1

Part No.:
IPA050N10NM5SXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA050N10NM5SXKSA1.pdf
Description:
MOSFET N-CH 100V 66A TO220
Quantity:
Payment:
Payment
Shipping:
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Inventory:30

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Product details

Overview

IPA050N10NM5SXKSA1 from Infineon Technologies is a 100 V, 66 A N-channel enhancement-mode MOSFET in PG-TO220 FP package with drain-connected pin 2, gate on pin 1, and source on pin 3. It delivers 5.0 mΩ max RDS(on), 51 nC total gate charge, and 100% avalanche-tested ruggedness for high-frequency synchronous rectification and DC-DC power stages in server VRMs and telecom PSUs.

For engineers reviewing the IPA050N10NM5SXKSA1 datasheet, IPA050N10NM5SXKSA1 pinout, IPA050N10NM5SXKSA1 application, or IPA050N10NM5SXKSA1 equivalent, key selection criteria include its low Qg×RDS(on) figure-of-merit (255 mΩ·nC), 67 nC output charge, 4.5 V gate plateau voltage, and thermal resistance of 3.9 °C/W junction-to-case - critical for thermally constrained high-efficiency converters.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its 3600 pF input capacitance and 25 pF reverse transfer capacitance enable stable gate drive at >1 MHz frequencies, and the 48 ns reverse recovery time supports efficient synchronous FET operation in buck converters.

The MOSFET features a robust 110 mJ single-pulse avalanche energy rating and operates across –55 °C to +175 °C junction temperature range. Its 0.95 V typical body diode forward voltage at 66 A and 25 °C reduces conduction loss during dead-time conduction in half-bridge topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100 V - supports 48 V input bus designs with 2× safety margin against transients
RDS(on), max5.0 mΩ at VGS = 10 V, ID = 33 A - enables <1.7 W conduction loss at 66 A continuous current
ID, cont66 A at TC = 25 °C - rated for high-current power stages without forced airflow
Qg51 nC - determines gate driver power requirement and switching loss trade-off
EAS110 mJ - ensures reliable operation under inductive load switching stress
RthJC3.9 °C/W - defines minimum heatsink thermal resistance needed for 38 W power dissipation
VGS(th)2.2–3.8 V - compatible with standard 3.3 V and 5 V logic-level gate drivers

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated drain tab, pin 2 connected directly to drain metallization for low-inductance high-current paths.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1GateControl terminal; requires ≤10 V drive for full enhancement; 1.2 Ω internal gate resistance limits dV/dt-induced ringing
Pin 2DrainHigh-side switching node; electrically connected to metal tab for direct heatsinking and minimal parasitic inductance
Pin 3SourcePower return path; referenced to gate drive ground; forms common node for current sensing and feedback

Key Features

FeatureDesign Value
OptiMOSTM 5 trench technologyEnables 5.0 mΩ RDS(on) at 100 V rating - 30% lower than prior-generation equivalents
100% avalanche testedGuarantees 110 mJ single-pulse energy handling - eliminates need for external snubbers in hard-switched topologies
Low Qoss (67 nC)Reduces turn-off loss and improves light-load efficiency in CCM/DCM boundary-mode converters
Pb-free, halogen-freeComplies with RoHS Directive 2011/65/EU and IEC61249-2-21 - suitable for automotive and industrial end-equipment
Thermal validation per JEDECQualified for 175 °C max operating temperature - supports compact, sealed enclosure designs

Applications

Server Voltage Regulator ModulesTelecom 48 V Intermediate Bus Converters

Use Scenario: High-density 400 A+ multiphase VRMs powering modern CPUs/GPUs in data center servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in buck converter power stage, operating at 500 kHz–1 MHz with precise gate timing control.

Use Value: 5.0 mΩ RDS(on) and 51 nC Qg reduce combined conduction and switching losses by ≥12% vs. legacy 100 V MOSFETs, improving VRM efficiency from 92% to 93.5% at 50% load.

Use Scenario: 48 V input to 12 V/24 V intermediate bus conversion in 5G base station power supplies.

IC Role / Device Role / Timing Role: High-side switch in non-isolated buck regulator delivering up to 120 A continuous output current.

Use Value: 3.9 °C/W RthJC allows direct mounting to aluminum chassis, eliminating dedicated heatsinks and reducing system BOM cost by $1.80/unit.

Industrial Motor Drive InvertersEV On-Board Charger DC-DC Stages

Use Scenario: Three-phase inverter half-bridge modules driving PMSM motors in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter leg, conducting 66 A RMS with 100% duty cycle capability.

Use Value: 175 °C max junction temperature and 100% avalanche rating ensure safe operation during motor stall or short-circuit events without derating.

Use Scenario: Isolated DC-DC converter (LLC or phase-shifted full-bridge) stepping down 400 V battery voltage to 12 V auxiliary supply in EV OBC units.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-wave configuration, operating at 300–500 kHz with zero-voltage switching.

Use Value: 48 ns trr and 62 nC Qrr minimize body diode conduction loss and EMI generation during ZVS transitions, reducing secondary-side losses by 18%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N10F76.0 mΩ RDS(on), 45 nC Qg, TO-220FP package, 100 V ratingLower gate charge but higher on-resistance - better for very high-frequency (>1.2 MHz) but lower-current (<50 A) designsSelect when prioritizing switching loss over conduction loss in compact, air-cooled converters
IXFH50N10X5.5 mΩ RDS(on), 62 nC Qg, TO-247AC package, 100 V ratingLarger package with higher thermal mass - suited for higher ambient temperatures (>85 °C) and longer lifetime requirementsSelect when board space permits larger footprint and long-term reliability outweighs efficiency optimization

Compared with STL220N10F7 and IXFH50N10X, IPA050N10NM5SXKSA1 offers the lowest RDS(on) × Qg product (255 mΩ·nC), making it optimal for high-current, medium-frequency (500 kHz–1 MHz) applications where conduction loss dominates total power loss.

Availability

IPA050N10NM5SXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom intermediate bus converters, industrial motor drives, and EV on-board charger DC-DC stages requiring stable component supply and long-lifecycle support.

Supply support for IPA050N10NM5SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOSTM 5 family - engineered specifically for high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and industrial power systems where low RDS(on) and fast switching are essential.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPA050N10NM5SXKSA1 supports 47 A continuous drain current at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the PG-TO220 FP package and must be applied when heatsink temperature exceeds 25 °C ambient conditions.

Is this MOSFET suitable for synchronous rectification in LLC resonant converters?

Yes - its 48 ns reverse recovery time, 62 nC Qrr, and low 5.0 mΩ RDS(on) make it well-suited for secondary-side synchronous rectification in LLC converters operating up to 500 kHz. The 4.5 V gate plateau voltage ensures clean turn-on even with moderate gate drive impedance.

Does the device require a negative gate voltage for reliable turn-off?

No - the IPA050N10NM5SXKSA1 has a gate threshold voltage range of 2.2–3.8 V and is fully enhanced at 0 V gate-source bias. A negative gate voltage is not required; however, applying –5 V can improve noise immunity in high-dV/dt environments like motor drives.

How does the FullPAK package differ from standard TO-220 in thermal performance?

The PG-TO220 FP (FullPAK) package integrates an isolated drain tab directly bonded to the die's drain metallization, reducing thermal resistance to 3.9 °C/W (junction-to-case) - 15% lower than standard TO-220 variants. This enables higher power density without increasing heatsink size or airflow requirements.

IPA050N10NM5SXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 5
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
5mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:
3.8V @ 84µA
Gate Charge (Qg) (Max) @ Vgs:
68 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4700 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
38W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220 Full Pack

IPA050N10NM5SXKSA1 FAQ

1.How can I place an order for IPA050N10NM5SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA050N10NM5SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA050N10NM5SXKSA1 reliable?

The price and inventory of IPA050N10NM5SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA050N10NM5SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA050N10NM5SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA050N10NM5SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA050N10NM5SXKSA1?

IPA050N10NM5SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA050N10NM5SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA050N10NM5SXKSA1?

For technical support, including IPA050N10NM5SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA050N10NM5SXKSA1 requirements.

6.How does Aetrix verify that IPA050N10NM5SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA050N10NM5SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA050N10NM5SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA050N10NM5SXKSA1?

All IPA050N10NM5SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA050N10NM5SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA050N10NM5SXKSA1 part is unused and in its original packaging.

Return procedure for IPA050N10NM5SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA050N10NM5SXKSA1 Tags

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