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Infineon Technologies IPA060N06NM5SXKSA1

Part No.:
IPA060N06NM5SXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA060N06NM5SXKSA1.pdf
Description:
MOSFET N-CH 60V 56A TO220
Quantity:
Payment:
Payment
Shipping:
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Inventory:9,778

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Product details

Overview

IPA060N06NM5SXKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO220 FP package, rated for 60 V VDS, 56 A continuous drain current at TC = 25 °C, and 6 mΩ max RDS(on) at VGS = 10 V. It features 32 nC Qoss, 27 nC total gate charge (Qg), and 100% avalanche tested - optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPA060N06NM5SXKSA1 datasheet, IPA060N06NM5SXKSA1 pinout, IPA060N06NM5SXKSA1 application, or IPA060N06NM5SXKSA1 equivalent, key selection criteria include its low gate charge × RDS(on) figure-of-merit (FOM), robust 60 mJ single-pulse avalanche energy, and validated thermal resistance of 4.6 °C/W (junction-to-case).

Technical Context

This OptiMOSTM 5 device employs trench-gate superjunction technology to achieve ultra-low RDS(on) while maintaining fast switching dynamics: td(on) = 12 ns, tf = 7 ns, and Ciss = 2000–2600 pF at VDS = 30 V. Its gate plateau voltage is 4.9 V, enabling stable turn-on under typical 5–12 V gate drive conditions.

The integrated body diode exhibits VSD = 0.91–1.2 V at IF = 27 A and Tj = 25 °C, with trr = 32 ns and Qrr = 28 nC - critical for minimizing reverse recovery losses in synchronous buck topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60 V - maximum blocking voltage for 48 V bus and 12 V intermediate rail applications
RDS(on), max6 mΩ at VGS = 10 V - enables <1 W conduction loss at 56 A, reducing heatsink requirements
ID, cont.56 A at TC = 25 °C - supports high-current output stages in server VRMs and telecom PSUs
Qg27 nC - low gate drive power demand, compatible with standard PWM controllers without gate driver boost
EAS60 mJ - withstands inductive switching transients in hard-switched converters without failure
RthJC4.6 °C/W - allows direct mounting to heatsink for thermal management in compact power modules
Qoss32 nC - minimizes capacitive turn-off loss during high-frequency operation (>500 kHz)

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated drain tab (Pin 2), non-isolated case. Thermal pad on drain side for direct heatsink attachment.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Gate)Control inputReceives gate drive signal; low input capacitance (Ciss ≈ 2.3 nF) reduces driver loading
Pin 2 (Drain)High-side switch node / power outputInternally connected to metal tab; electrically isolated from case for safe heatsink mounting
Pin 3 (Source)Reference return pathCommon source node for gate drive reference and current sensing; low-inductance layout critical for EMI control

Key Features

FeatureDesign Value
OptiMOSTM 5 trench-gate architectureDelivers 20% lower RDS(on) × Qg FOM vs. prior-generation 60 V MOSFETs, improving efficiency at 300–1000 kHz
100% avalanche testedGuarantees ruggedness against inductive kickback in unregulated loads and hot-swap events
Pb-free, halogen-free (IEC61249-2-21)Complies with RoHS and automotive ELV directives; suitable for industrial and transportation end equipment
Low Qrr (28 nC) and trr (32 ns)Reduces cross-conduction loss and EMI in synchronous rectifier mode, especially below 100 kHz

Applications

Server Voltage Regulator Modules (VRMs)Telecom DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying CPU/GPU core voltage (0.8–1.2 V @ up to 300 A).

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in each phase leg, operating at 300–600 kHz with precise dead-time control.

Use Value: 6 mΩ RDS(on) and 27 nC Qg reduce both conduction and switching losses, enabling >95% peak efficiency at full load.

Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power systems.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward or LLC resonant topology.

Use Value: 60 mJ EAS rating ensures reliable operation during transient overloads and short-circuit fault conditions.

Industrial Motor Drive InvertersAutomotive On-Board Chargers (OBC)

Use Scenario: 24–48 V three-phase inverter driving BLDC motors in material handling equipment.

IC Role / Device Role / Timing Role: Half-bridge low-side switch, commutated at 10–20 kHz with PWM modulation.

Use Value: Robust 175 °C Tj(max) and 4.6 °C/W RthJC support sustained operation in sealed enclosures without forced air cooling.

Use Scenario: Secondary-side synchronous rectifier in 3.3 kW bidirectional OBC AC/DC stage.

IC Role / Device Role / Timing Role: Synchronous rectifier in full-wave bridge configuration, operating at 100–300 kHz.

Use Value: Low VSD (0.91 V) and fast trr (32 ns) minimize reverse recovery loss and improve light-load efficiency by >1.2%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IPB060N06LGATMA1Same RDS(on) (6 mΩ), but in PG-TO263-7 package; 20% higher Qg (32 nC); no isolated drain tabSuitable for surface-mount PCBs with thermal vias; not compatible with TO-220 heatsinksSelect when automated assembly and board-level thermal spreading are prioritized over mechanical heatsink integration
STL220N6F7Higher RDS(on) (7.5 mΩ), lower Qg (22 nC), same VDS; 40 V gate rating vs. 20 VBetter gate drive margin for 15 V controllers; slightly higher conduction loss at high currentPrefer where gate drive voltage exceeds 12 V or where tighter Qg tolerance is required over absolute RDS(on) minimization

Compared with IPB060N06LGATMA1 and STL220N6F7, IPA060N06NM5SXKSA1 uniquely balances ultra-low RDS(on), moderate Qg, and isolated-drain thermal packaging - making it optimal for through-hole, heatsink-mounted, high-efficiency synchronous rectifiers where layout space and thermal interface control are constrained.

Availability

IPA060N06NM5SXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IPA060N06NM5SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the OptiMOSTM 5 family - engineered specifically for high-frequency, high-efficiency power conversion in data center, telecom, and industrial infrastructure, emphasizing low FOM and rugged avalanche performance.

FAQ

What is the maximum junction temperature and how is it validated?

The IPA060N06NM5SXKSA1 has a maximum junction temperature (Tj) of 175 °C, verified per JEDEC JESD22-A108 qualification standards. Thermal characterization confirms RthJC = 4.6 °C/W and stable RDS(on) behavior up to 175 °C, with normalized resistance drift ≤2.0× at rated current.

Is this MOSFET suitable for synchronous rectification in LLC resonant converters?

Yes - its 32 nC Qoss, 28 nC Qrr, and 32 ns trr enable efficient zero-voltage switching (ZVS) turn-on in LLC secondaries. The 6 mΩ RDS(on) minimizes conduction loss at high RMS currents, and the 60 V rating accommodates typical 48 V bus-derived secondary voltages.

Does the PG-TO220 FP package provide electrical isolation between drain and heatsink?

Yes - the PG-TO220 FP (FullPAK) variant features an electrically isolated drain tab. Pin 2 (drain) is insulated from the metal mounting surface, allowing direct attachment to a common heatsink without additional insulating hardware or thermal pads.

How does the gate threshold voltage (VGS(th)) vary across temperature?

VGS(th) decreases linearly with rising temperature: from 3.3 V (min) at −55 °C to 2.1 V (min) at 175 °C, with typical value 2.8 V at 25 °C. This negative temperature coefficient aids current sharing in paralleled configurations and improves turn-on stability at elevated ambient temperatures.

IPA060N06NM5SXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
OptiMOS™ 5
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Last Time Buy
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
6mOhm @ 56A, 10V
Vgs(th) (Max) @ Id:
3.3V @ 36µA
Gate Charge (Qg) (Max) @ Vgs:
36 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2600 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
33W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220 Full Pack

IPA060N06NM5SXKSA1 FAQ

1.How can I place an order for IPA060N06NM5SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA060N06NM5SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA060N06NM5SXKSA1 reliable?

The price and inventory of IPA060N06NM5SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA060N06NM5SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA060N06NM5SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA060N06NM5SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

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IPA060N06NM5SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA060N06NM5SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA060N06NM5SXKSA1?

For technical support, including IPA060N06NM5SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA060N06NM5SXKSA1 requirements.

6.How does Aetrix verify that IPA060N06NM5SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA060N06NM5SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA060N06NM5SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA060N06NM5SXKSA1?

All IPA060N06NM5SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA060N06NM5SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA060N06NM5SXKSA1 part is unused and in its original packaging.

Return procedure for IPA060N06NM5SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA060N06NM5SXKSA1 Tags

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