Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA083N10NM5SXKSA1

Name: IPA083N10NM5SXKSA1
Brand: Infineon Technologies
SKU: IPA083N10NM5SXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPA083N10NM5SXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA083N10NM5SXKSA1.pdf

Description:: MOSFET N-CH 100V 50A TO220

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:353

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPA083N10NM5SXKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-TO220 FP package, rated for 100 V drain-source voltage, 8.3 mΩ max R_DS(on) at V_GS = 10 V, and 50 A continuous drain current at T_C = 25 °C. It serves as a high-efficiency power switch in DC-DC converters and synchronous rectifiers, leveraging its low gate charge × R_DS(on) figure of merit (FOM) and 100% avalanche-tested ruggedness.

For engineers reviewing the IPA083N10NM5SXKSA1 datasheet, IPA083N10NM5SXKSA1 pinout, IPA083N10NM5SXKSA1 application, or IPA083N10NM5SXKSA1 equivalent, key selection criteria include its 41 nC output charge (Q_oss), 30 nC total gate charge (Q_g), thermal resistance of 4.2 °C/W (junction-to-case), and suitability for high-frequency switching above 500 kHz in industrial and automotive power stages.

Technical Context

This OptiMOSTM 5 device employs trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching performance. Its gate threshold voltage (2.2–3.8 V) supports standard 5 V and 10 V logic-level drive, and its reverse diode exhibits 0.87 V typical forward voltage at 25 A and 25 °C.

The MOSFET is characterized for operation up to 175 °C junction temperature, with normalized R_DS(on) increasing by ~1.8× from 25 °C to 175 °C. Its safe operating area (SOA) supports pulsed drain currents up to 200 A at short durations (≤100 µs), and it delivers 83 mJ single-pulse avalanche energy under defined test conditions (I_D = 50 A, R_GS = 25 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switches in 48 V input systems and secondary-side sync rectifiers in 12–48 V output rails.
R_DS(on), max	8.3 mΩ at V_GS = 10 V - Enables <1.3 W conduction loss at 50 A, critical for high-current, low-voltage power delivery.
Q_g	30 nC - Low gate drive energy requirement reduces driver IC stress and enables efficient operation at >1 MHz switching frequencies.
Q_oss	41 nC - Minimizes turn-off losses during hard-switching and improves efficiency in resonant topologies like LLC.
R_thJC	4.2 °C/W - Allows direct heatsink mounting without thermal interface material degradation concerns in thermally constrained enclosures.
E_AS	83 mJ - Confirmed avalanche ruggedness supports reliable operation under inductive load switching transients and fault conditions.
V_GS(th)	2.2–3.8 V - Ensures robust turn-on margin with standard microcontroller GPIO or dedicated gate drivers without level-shifting.

Pinout & Package

IPA083N10NM5SXKSA1 uses the PG-TO220 FP (FullPAK) package - a through-hole variant with isolated drain tab for simplified thermal management and PCB layout. The drain is internally connected to the metal tab (Pin 2), gate is on Pin 1, and source is on Pin 3.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires <30 nC charge for full enhancement; sensitive to ESD (±20 V absolute max V_GS).
Pin 2 (Drain)	High-side power path	Internally bonded to metal tab - electrically active and thermally conductive; must be isolated from heatsink unless referenced to system ground.
Pin 3 (Source)	Reference node	Serves as return path for drain current and gate drive loop; low-inductance routing essential to suppress ringing in high-dI/dt applications.

Key Features

Feature	Design Value
OptiMOSTM 5 trench technology	Delivers 8.3 mΩ R_DS(on) in TO-220 footprint - 25% lower on-resistance than prior-generation 100 V MOSFETs in same package.
100% avalanche tested	Each unit validated to withstand 83 mJ single-pulse avalanche energy - eliminates need for external snubbers in flyback or buck-boost designs.
Low Q_g × R_DS(on) FOM	250 mΩ·nC - benchmark figure enabling high-frequency, high-efficiency operation in server VRMs and telecom POL converters.
Pb-free & halogen-free	Complies with RoHS Directive 2011/65/EU and IEC61249-2-21 - qualified for automotive and industrial applications requiring strict environmental compliance.

Applications

Server VRM High-Side Switch

Telecom DC-DC Sync Rectifier

Use Scenario: Primary-side high-side switch in multiphase buck converters delivering 50–100 A at 0.8–1.2 V for CPU/GPU power domains.

IC Role / Device Role / Timing Role: Fast-switching power transistor handling 500 kHz–1 MHz PWM with minimal conduction and switching loss.

Use Value: 8.3 mΩ R_DS(on) and 30 nC Q_g reduce total power loss by ≥15% versus legacy 100 V MOSFETs, improving VRM efficiency from 92% to 93.5% at 60 A.

Use Scenario: Secondary-side synchronous rectifier in 48 V–12 V isolated DC-DC modules for 5G base station power supplies.

IC Role / Device Role / Timing Role: Low-V_F replacement for Schottky diodes, driven by controller's complementary gate signal with tight timing control.

Use Value: 0.87 V diode forward voltage at 25 A and 25 °C cuts rectification loss by 40% compared to 45 V Schottky, enabling higher power density and cooler operation.

Industrial Motor Drive Half-Bridge

Automotive On-Board Charger (OBC) Boost Stage

Use Scenario: Upper switch in half-bridge inverters controlling 3-phase BLDC motors in HVAC blowers and pump drives (24–48 V bus).

IC Role / Device Role / Timing Role: High-reliability power switch subjected to repetitive inductive turn-off stress and motor stall conditions.

Use Value: 83 mJ avalanche energy rating ensures survival during 100% load dump events without derating, eliminating need for external clamping circuits.

Use Scenario: Boost switch in bidirectional OBC AC/DC front-end stage operating at 30–100 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: High-voltage, high-current switch managing 5–7 kW power transfer with minimal thermal rise.

Use Value: 4.2 °C/W R_thJC allows direct mounting to aluminum chassis, reducing thermal solution cost by 30% versus discrete heatsink + TIM assemblies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF10	R_DS(on) = 11.5 mΩ (max), Q_g = 110 nC, TO-220 package	Higher conduction and switching losses limit use to ≤200 kHz; not avalanche-rated	Acceptable for cost-sensitive, low-frequency motor controls where ruggedness is less critical.
IRF540NPBF	R_DS(on) = 44 mΩ (max), Q_g = 71 nC, TO-220 package	Lower voltage rating (100 V same), but significantly higher losses and no avalanche testing	Suitable only for low-power (<10 A), non-critical linear or quasi-resonant applications.

Compared with STP80NF10 and IRF540NPBF, IPA083N10NM5SXKSA1 delivers superior high-frequency efficiency, guaranteed avalanche capability, and tighter parametric distribution - making it the preferred choice for mission-critical, high-density power conversion where thermal headroom and reliability are non-negotiable.

Availability

IPA083N10NM5SXKSA1 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC modules, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IPA083N10NM5SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 5 family - engineered specifically for high-efficiency, high-frequency power conversion in data center, telecom, and industrial applications where low R_DS(on) and fast switching are mandatory.

FAQ

What is the maximum recommended gate resistor value for optimal switching performance?

A 1.6 Ω external gate resistor is specified in the datasheet for switching characterization (td(on)/tr/tf measurements). Using >5 Ω increases turn-on delay and rise time, risking shoot-through in half-bridge configurations. For 1 MHz operation, 1–2 Ω is optimal; values below 1 Ω require careful PCB layout to avoid gate oscillation.

Can IPA083N10NM5SXKSA1 be used in linear mode (as a pass transistor)?

No - this device is optimized for switching operation only. Its Safe Operating Area (SOA) curve shows limited DC capability: at V_DS = 10 V, max continuous ID is ~12 A; at V_DS = 50 V, it drops to ~2.5 A. Linear-mode use risks thermal runaway due to positive R_DS(on) temperature coefficient and insufficient SOA margin.

Is the drain tab electrically isolated from the PCB mounting surface?

No - the drain (Pin 2) is directly connected to the metal tab in the PG-TO220 FP package. When mounted to a heatsink, the tab must either be insulated (using mica or polymer pad) or tied to the drain net. Failure to isolate will cause short-circuit if the heatsink is grounded or at another potential.

Does IPA083N10NM5SXKSA1 support gate drive voltages below 5 V?

Yes - with V_GS(th) ranging from 2.2 to 3.8 V, it fully enhances at 5 V, delivering R_DS(on) ≤12 mΩ (typical). However, at V_GS = 4.5 V, R_DS(on) rises to ~15 mΩ, increasing conduction loss by ~90%. For best efficiency, 10 V drive is recommended.

IPA083N10NM5SXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 8.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 3.8V @ 49µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2700 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 36W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220 Full Pack

IPA083N10NM5SXKSA1 FAQ

1.How can I place an order for IPA083N10NM5SXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA083N10NM5SXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA083N10NM5SXKSA1 reliable?

The price and inventory of IPA083N10NM5SXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA083N10NM5SXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA083N10NM5SXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA083N10NM5SXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA083N10NM5SXKSA1?

IPA083N10NM5SXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA083N10NM5SXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA083N10NM5SXKSA1?

For technical support, including IPA083N10NM5SXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA083N10NM5SXKSA1 requirements.

6.How does Aetrix verify that IPA083N10NM5SXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA083N10NM5SXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA083N10NM5SXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA083N10NM5SXKSA1?

All IPA083N10NM5SXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA083N10NM5SXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA083N10NM5SXKSA1 part is unused and in its original packaging.

Return procedure for IPA083N10NM5SXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.