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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA100N08N3GXKSA1

Name: IPA100N08N3GXKSA1
Brand: Infineon Technologies
SKU: IPA100N08N3GXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA100N08N3GXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA100N08N3GXKSA1.pdf

Description:: MOSFET N-CH 80V 40A TO220-FP

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Product details

Overview

IPA100N08N3GXKSA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-frequency DC/DC converters and synchronous rectification, featuring 80 V V_DS, 10 mΩ R_DS(on) max at V_GS = 10 V and I_D = 40 A, 100% avalanche tested, and housed in a fully isolated PG-TO220-FP package rated for 2500 V_AC/1 min.

For engineers reviewing the IPA100N08N3GXKSA1 datasheet, IPA100N08N3GXKSA1 pinout, IPA100N08N3GXKSA1 application, or IPA100N08N3GXKSA1 equivalent, key selection criteria include gate charge × R_DS(on) figure-of-merit (FOM), thermal resistance (R_thJC = 4.3 K/W), avalanche energy (E_AS = 110 mJ), diode reverse recovery (t_rr = 57 ns), and SOA compliance up to 40 A continuous drain current.

Technical Context

This OptiMOS™3 power transistor employs trench-gate silicon technology with optimized cell pitch and reduced gate-drain charge (Q_gd = 5 nC) to minimize switching losses in hard-switched topologies. Its low R_DS(on) × Q_g FOM (≈84 mΩ·nC) enables efficient operation in 48 V input telecom and server VRMs.

The device integrates a robust body diode with Q_rr = 91 nC and t_rr = 57 ns at I_F = 40 A, supporting ZVS-assisted synchronous rectification. Thermal design is enabled by its isolated TO-220-FP package (2500 V_AC isolation) and validated junction-to-case thermal resistance of 4.3 K/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage for 48 V bus applications with 20 % margin
R_DS(on) max	10 mΩ at V_GS = 10 V, I_D = 40 A - Enables ≤4 W conduction loss at full load
Q_g total	26–35 nC - Determines gate drive power and switching speed in 300–1000 kHz converters
E_AS	110 mJ - Confirmed single-pulse avalanche ruggedness under unclamped inductive switching
t_rr	57 ns - Limits diode reverse recovery loss and EMI in synchronous buck outputs
R_thJC	4.3 K/W - Allows 35 W dissipation at T_C = 25 °C with standard heatsinking
I_D cont.	40 A at T_C = 25 °C - Package-limited rating; derates to 30 A at T_C = 100 °C

Pinout & Package

IPA100N08N3GXKSA1 uses the PG-TO220-FP package: a fully isolated, through-hole, 3-pin variant of TO-220 with internal creepage/clearance enabling 2500 V_AC isolation between drain and source/substrate terminals for reinforced insulation designs.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain (D)	Electrically connected to metal tab; primary heat path and high-side switching node
Pin 2	Source (S)	Reference node for gate drive; carries full load current and diode return path
Pin 3	Gate (G)	Control terminal; requires < ±20 V rating and low-inductance layout to manage dV/dt-induced turn-on

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	≈84 mΩ·nC - Reduces combined conduction + switching loss in 500 kHz+ DC/DC stages
100% avalanche tested	110 mJ single-pulse E_AS - Guarantees ruggedness against inductive transients without external snubbers
Isolated package (2500 V_AC)	Reinforced insulation - Eliminates need for additional isolation barriers in AC-DC front-end or industrial power supplies
Low Q_gd/Q_g ratio	5 nC / 26–35 nC - Improves Miller immunity and enables stable operation with moderate gate resistors

Applications

Telecom DC/DC Converters

Server Voltage Regulators

Use Scenario: 48 V input to 12 V/5 V point-of-load conversion in 1U rack servers.

IC Role / Device Role / Timing Role: Primary high-side switch in synchronous buck topology operating at 600 kHz.

Use Value: Low R_DS(on) (10 mΩ) and Q_g (26–35 nC) reduce total power loss to < 5 W at 40 A output, improving system efficiency by ≥1.2 % over prior-gen MOSFETs.

Use Scenario: Intermediate bus converter (IBC) stepping 48 V down to 12 V for GPU/CPU VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side LLC resonant stage.

Use Value: Fast, soft-recovery body diode (t_rr = 57 ns, Q_rr = 91 nC) minimizes reverse recovery loss and EMI, enabling >96 % peak efficiency.

Industrial Motor Drives

Renewable Energy Inverters

Use Scenario: Half-bridge output stage in 2 kW BLDC motor controller with 24–72 V battery input.

IC Role / Device Role / Timing Role: Low-side switching element handling 40 A continuous phase current.

Use Value: Avalanche-rated construction withstands inductive kickback during PWM commutation without clamping circuits.

Use Scenario: DC link switching in 3 kW string solar inverter with 600 V DC bus.

IC Role / Device Role / Timing Role: Auxiliary 80 V switch in auxiliary power supply and gate driver bias circuit.

Use Value: Isolated PG-TO220-FP package provides galvanic separation between control logic and high-voltage domain, meeting IEC 62109 creepage requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB100N08N3 G	Same die, PG-TO263-3 (D²PAK) package; R_thJC = 3.2 K/W; no isolation	Requires PCB-level isolation; better thermal performance but unsuitable for reinforced insulation	Select when board space allows surface-mount assembly and isolation is handled externally
IRF1404ZPBF	Legacy planar MOSFET; R_DS(on) = 20 mΩ; Q_g = 131 nC; no avalanche rating	Limited to lower-frequency (< 200 kHz), non-avalanche-critical applications	Select only for cost-sensitive legacy designs where efficiency and ruggedness are secondary

Compared with IPB100N08N3 G and IRF1404ZPBF, IPA100N08N3GXKSA1 uniquely combines reinforced isolation, best-in-class FOM, and guaranteed avalanche capability-making it optimal for compact, high-efficiency, safety-certified 48 V power systems.

Availability

IPA100N08N3GXKSA1 is available at Aetrix Electronics and suitable for telecom DC/DC converters, server voltage regulators, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPA100N08N3GXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This part belongs to the OptiMOS™3 family-designed specifically for high-efficiency, high-frequency power conversion in datacenter, industrial, and renewable energy systems where low R_DS(on), fast switching, and ruggedness are critical.

FAQ

What is the maximum allowable gate-source voltage for IPA100N08N3GXKSA1?

The absolute maximum gate-source voltage is ±20 V, per the datasheet's "Maximum ratings" table. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement, with 6 V sufficient for 20 A operation (R_DS(on) ≤ 18.2 mΩ). Gate drive must limit dV/dt to avoid spurious turn-on via Q_gd.

Does IPA100N08N3GXKSA1 require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control switching speed and suppress oscillation. With Q_g = 26–35 nC and typical gate driver output impedance, a 10 Ω series resistor balances EMI reduction and switching loss. For 600 kHz operation, values between 5 Ω and 15 Ω are validated; lower values increase dI/dt stress on the driver and PCB layout.

Can IPA100N08N3GXKSA1 be used in linear (analog) mode operation?

No-it is not characterized or rated for linear mode. The Safe Operating Area (SOA) curve shows limited DC capability (e.g., 10 A at 40 V), and thermal runaway risk increases above V_DS > 20 V due to positive temperature coefficient of R_DS(on). It is intended strictly for switched-mode applications with defined duty cycle and heatsinking.

Is the body diode suitable for synchronous rectification without external Schottky replacement?

Yes-the integrated body diode is specified for synchronous rectification: t_rr = 57 ns, Q_rr = 91 nC, and V_SD = 1.0–1.2 V at 40 A. Its soft recovery behavior reduces EMI versus fast-recovery diodes, and it eliminates external component count in cost-sensitive 48 V buck converters where efficiency > 95 % is targeted.

IPA100N08N3GXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 46µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2410 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA100N08N3GXKSA1 FAQ

1.How can I place an order for IPA100N08N3GXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA100N08N3GXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA100N08N3GXKSA1 reliable?

The price and inventory of IPA100N08N3GXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA100N08N3GXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA100N08N3GXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA100N08N3GXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA100N08N3GXKSA1?

IPA100N08N3GXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA100N08N3GXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA100N08N3GXKSA1?

For technical support, including IPA100N08N3GXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA100N08N3GXKSA1 requirements.

6.How does Aetrix verify that IPA100N08N3GXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA100N08N3GXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA100N08N3GXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA100N08N3GXKSA1?

All IPA100N08N3GXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA100N08N3GXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA100N08N3GXKSA1 part is unused and in its original packaging.

Return procedure for IPA100N08N3GXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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