Infineon Technologies IPA320N20NM3SXKSA1

Overview

IPA320N20NM3SXKSA1 from Infineon Technologies is a 200 V, 26 A N-channel enhancement-mode MOSFET in PG-TO220FP package with drain-connected pin 2, gate on pin 1, and source on pin 3. It features 32 mΩ max R_DS(on), 22 nC total gate charge, 54 nC output charge, and 100% avalanche tested for robustness in high-frequency switching and synchronous rectification circuits.

For engineers reviewing the IPA320N20NM3SXKSA1 datasheet, IPA320N20NM3SXKSA1 pinout, IPA320N20NM3SXKSA1 application, or IPA320N20NM3SXKSA1 equivalent, key selection criteria include its low Q_g×R_DS(on) figure-of-merit (FOM), 190 mJ single-pulse avalanche energy, and thermal resistance of 3.9 °C/W (junction-to-case), critical for power supply and motor drive thermal design.

Technical Context

This OptiMOSTM 3-generation device uses trench-gate superjunction technology to achieve high voltage blocking (200 V) while maintaining low conduction loss (27.2–32 mΩ at V_GS = 10 V, I_D = 26 A) and fast switching (t_r = 9 ns, t_f = 4 ns). Its gate threshold voltage (2–4 V) ensures compatibility with standard 10 V gate drivers.

The integrated body diode supports synchronous rectification with 0.94–1.2 V forward voltage at 26 A and 500 nC reverse recovery charge. Thermal performance is validated per JEDEC standards, with maximum junction temperature rated at 175 °C and T_j-to-T_c thermal resistance of 3.9 °C/W.

Key Specifications

Pinout & Package

Package: PG-TO220FP (FullPAK), lead-free, halogen-free, RoHS-compliant. Drain-connected tab provides low-inductance, high-current path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 200 V power MOSFET applications.

Compared with STP26NM20 and IRF640NPBF, IPA320N20NM3SXKSA1 delivers superior FOM (R_DS(on) × Q_g ≈ 0.7 nC·Ω), guaranteed avalanche ruggedness, and lower thermal resistance-making it the preferred choice for high-density, high-efficiency 200 V power stages requiring reliability and scalability.

Availability

IPA320N20NM3SXKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV on-board chargers requiring stable component supply and long-term production continuity.

Supply support for IPA320N20NM3SXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to the OptiMOSTM 3 family, engineered specifically for high-efficiency, high-frequency power conversion in 100–250 V applications including server PSUs, industrial inverters, and renewable energy systems.

FAQ

What is the maximum junction temperature and how is it validated?

The IPA320N20NM3SXKSA1 has a maximum junction temperature (T_j) of 175 °C, validated per JEDEC Standard JESD22-A108. Thermal characterization includes transient impedance curves (Z_thJC vs. time) and steady-state derating data across case temperatures from −55 °C to 175 °C, ensuring reliability under real-world thermal cycling.

Is this MOSFET suitable for synchronous rectification in a 400 V output DC/DC converter?

Yes-it supports synchronous rectification up to 400 V DC output when used in secondary-side configurations with appropriate gate drive timing. Its 200 V V_DS rating requires careful snubber design or clamping for voltage overshoot; typical use is in 300–400 V bus systems with <10% transient margin, leveraging its 500 nC Q_rr and 0.94 V V_SD.

Does the PG-TO220FP package require electrical isolation from the heatsink?

Yes-pin 2 (drain) is internally connected to the metal tab. Unless the heatsink is referenced to system drain potential, an electrically insulating thermal pad or mica washer must be used. The package's isolation voltage rating is not specified; design must ensure creepage/clearance compliance per IEC 62368-1 for the target application.

How does the gate plateau voltage affect driver selection?

The gate plateau voltage is 4.3 V (typical), meaning the device remains in Miller region until V_GS reaches ~4.3 V. This requires gate drivers capable of sourcing ≥2 A peak current to quickly traverse the plateau and minimize switching transition time-critical for reducing dynamic losses in high-frequency operation above 300 kHz.