Infineon Technologies IPA50R190CE

Overview

IPA50R190CE from Infineon Technologies is a 500 V, 0.19 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in PG-TO247 package, optimized for high-efficiency hard-switching and resonant PFC/PWM stages in industrial and consumer power supplies. It delivers 24.8 A continuous drain current at T_C = 25°C, 47.2 nC total gate charge, and 4.42 µJ output energy at 400 V.

For engineers reviewing the IPA50R190CE datasheet, IPA50R190CE pinout, IPA50R190CE application, or IPA50R190CE equivalent, this device is selected for high-frequency, high-voltage switching where low conduction + switching loss trade-off, diode commutation ruggedness, and ease of gate drive are critical - especially in compact 500 V AC-input systems.

Technical Context

This CoolMOS™ CE transistor uses superjunction architecture to achieve ultra-low figure-of-merit (R_DS(on) × Q_g = 8.95 Ω·nC) and low E_oss (4.42 µJ @ 400 V), enabling high-frequency operation without sacrificing voltage rating or ruggedness. Its 50 V/ns dv/dt capability and 500 A/µs diode commutation speed support robust hard-switching in asymmetric half-bridge and boost topologies.

The device features a 5.4 V gate plateau voltage and 6.1 nC gate-to-source charge, simplifying driver selection and reducing gate loss. Its 0.82 °C/W junction-to-case thermal resistance supports high-power density designs when mounted on heatsinks with adequate mechanical torque (60 Ncm).

Key Specifications

Pinout & Package

IPA50R190CE is housed in PG-TO247 package with isolated tab (Drain-connected). The package provides low thermal resistance and high-current capability suitable for industrial power modules and open-frame SMPS designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP55N6F6 and IXFH50N60X3, IPA50R190CE offers optimal balance of 500 V rating, low R_DS(on), and minimal E_oss - making it uniquely suited for high-frequency, high-efficiency 400 V bus applications where thermal headroom and gate drive simplicity are design constraints.

Availability

IPA50R190CE is available at Aetrix Electronics and suitable for server power supply PFC stages, LCD TV main switchers, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for IPA50R190CE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

The CoolMOS™ CE series was engineered specifically for cost-sensitive, high-efficiency AC-DC conversion in consumer and industrial power supplies - emphasizing low gate charge, fast switching, and ruggedness without complex drive circuitry.

FAQ

What is the maximum recommended gate drive voltage for IPA50R190CE?

The absolute maximum gate-source voltage is ±30 V, but the device is fully enhanced and optimized at V_GS = 13 V. Operation between 10 V and 15 V ensures robust turn-on while minimizing gate oxide stress. Driving above 15 V yields diminishing R_DS(on) improvement and increases risk of gate oscillation in high-dv/dt layouts.

Does IPA50R190CE include an integrated body diode, and how does it perform in freewheeling?

Yes, it features a fast-recovery epitaxial body diode with 280 ns reverse recovery time (t_rr) and 3.2 µC reverse recovery charge (Q_rr) at 400 V. This enables efficient freewheeling in hard-switched topologies, though its 500 A/µs di/dt rating makes it especially well-suited for ZVS and resonant circuits where diode stress is high.

Can IPA50R190CE replace older CoolMOS™ C3 or C7 devices in existing designs?

Yes - IPA50R190CE is pin-compatible and electrically backward-compatible with IPW50R190CE (same PG-TO247 footprint and gate threshold). It offers identical R_DS(on) and improved E_oss (4.42 µJ vs. 5.1 µJ), allowing direct drop-in replacement with measurable efficiency gain in high-frequency PFC stages.

What thermal interface material and mounting torque are required for reliable operation?

A minimum mounting torque of 60 Ncm is required for the M3.5 screw to ensure low thermal resistance (0.82 °C/W). Use thermally conductive, electrically insulating pads (e.g., Bergquist Sil-Pad 2000) or ceramic washers with thermal grease (e.g., Dow Corning TC-5623) to maintain isolation and minimize junction-to-heatsink ΔT under 152 W dissipation.