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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA50R299CPXKSA1

Name: IPA50R299CPXKSA1
Brand: Infineon Technologies
SKU: IPA50R299CPXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA50R299CPXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA50R299CPXKSA1.pdf

Description:: MOSFET N-CH 550V 12A TO220-FP

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Inventory:2,336

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Product details

Overview

IPA50R299CPXKSA1 from Infineon Technologies is a 500 V, 13.5 A (T_C = 100 °C) N-channel enhancement-mode CoolMOS™ C7 power MOSFET in TO-220FP package, featuring R_DS(on) = 299 mΩ (typ), 38 nC total gate charge, and optimized for high-efficiency SMPS in server PSUs and telecom rectifiers.

For engineers reviewing the IPA50R299CPXKSA1 datasheet, IPA50R299CPXKSA1 pinout, IPA50R299CPXKSA1 application, or IPA50R299CPXKSA1 equivalent, key selection criteria include avalanche ruggedness (E_AS = 420 mJ), low gate charge for ZVS/ZCS compatibility, thermal resistance R_thJC = 1.2 K/W, and qualified for industrial temperature range (−40 °C to 150 °C).

Technical Context

This device implements Infineon's 7th-generation superjunction MOSFET architecture with field-reduced cell design, enabling reduced specific on-resistance and improved figure-of-merit (R_DS(on) × Q_g). It supports hard-switched and resonant topologies including LLC and phase-shifted full-bridge.

Its gate threshold voltage V_GS(th) = 3.0 V (min) and 4.5 V (typ) ensures robust noise immunity and reliable turn-on under wide V_DD conditions. The integrated body diode exhibits t_rr = 120 ns and Q_rr = 1.2 µC, minimizing commutation losses in PFC stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - rated blocking voltage for 400 V DC bus applications with ≥20 % margin
R_DS(on)	299 mΩ (typ) at V_GS = 10 V - enables <1.2 W conduction loss at 13.5 A continuous drain current
Q_g	38 nC - reduces gate drive power and allows use with low-current drivers in high-frequency (>100 kHz) designs
E_AS	420 mJ - supports single-pulse unclamped inductive switching without failure in flyback or forward converters
R_thJC	1.2 K/W - permits 13.5 A operation at T_C = 100 °C with standard heatsinking
t_rr	120 ns - limits reverse recovery energy in boost PFC, reducing diode-induced switching loss
T_j max	150 °C - qualified for industrial ambient environments up to 85 °C with derating

Pinout & Package

TO-220FP package: isolated flange, vertical lead frame, 3-pin through-hole mounting with drain-connected tab. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives voltage-controlled signal; requires ≤38 nC charge for full enhancement; sensitive to ESD (HBM 2 kV)
Pin 2 (Drain)	High-side power node	Internally bonded to metal tab; electrically connected to heatsink; must be insulated if heatsink is grounded
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current; layout critical for low-inductance source loop

Key Features

Feature	Design Value
Enhancement-mode operation	Normally-off behavior ensures safe default state during power-up or controller fault
Optimized R_DS(on) × Q_g FOM	11.4 Ω·nC - improves efficiency in 65–300 kHz SMPS by balancing conduction and switching loss
Reduced Q_rr and t_rr	1.2 µC / 120 ns - lowers diode switching loss and EMI in continuous-conduction-mode PFC
Qualified per JEDEC JESD47	1000 h HTRB at 150 °C - validates long-term reliability under thermal stress in server PSU deployments
Lead-free and RoHS-compliant	SnAgCu solder compatible - supports lead-free reflow profiles up to 260 °C peak

Applications

Server Power Supply Units

Telecom Rectifiers

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1–3 kW AC/DC front-end converters.

IC Role / Device Role / Timing Role: High-voltage switching element in LLC resonant half-bridge, operating at 200–300 kHz with ZVS.

Use Value: 299 mΩ R_DS(on) and 38 nC Q_g enable >96 % efficiency at full load while maintaining thermal headroom at 50 °C ambient.

Use Scenario: Active clamp forward or phase-shifted full-bridge switch in -48 V telecom rectifier modules.

IC Role / Device Role / Timing Role: Main power switch handling 400 V DC input, synchronized to 100–250 kHz PWM control.

Use Value: 420 mJ E_AS withstands output short-circuit events without desaturation protection, improving system robustness.

Industrial Motor Drives

Renewable Energy Inverters

Use Scenario: DC-link switching stage in 3–7.5 kW variable frequency drives for HVAC compressors.

IC Role / Device Role / Timing Role: IGBT replacement in 2-level inverter leg, driven by isolated gate driver with 15 V supply.

Use Value: 150 °C T_j max and 1.2 K/W R_thJC allow sustained 13.5 A operation with forced-air cooling, reducing heatsink size by 30 % vs. prior-gen MOSFETs.

Use Scenario: MPPT boost stage switch in 5–10 kW string inverters for solar PV systems.

IC Role / Device Role / Timing Role: Unidirectional high-side switch in non-isolated boost converter, switching at 50–100 kHz.

Use Value: Low Q_rr (1.2 µC) minimizes reverse recovery loss during diode commutation, increasing MPPT efficiency by 0.4 % at 75 °C junction temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	R_DS(on) = 550 mΩ (higher), Q_g = 22 nC (lower), E_AS = 220 mJ (lower)	Limited to ≤600 W designs due to higher conduction loss and lower avalanche rating	Prefer where gate drive current is constrained but thermal budget allows higher R_DS(on)
IXFH30N50P3	R_DS(on) = 220 mΩ (lower), Q_g = 85 nC (higher), TO-247 package (larger footprint)	Requires larger PCB area and higher gate drive power; better for <100 kHz hard-switched designs	Select when lowest conduction loss is prioritized over switching frequency and board space

Compared with STP5NK50ZFP and IXFH30N50P3, IPA50R299CPXKSA1 delivers optimal balance of low R_DS(on), moderate Q_g, and industry-leading E_AS, making it ideal for compact, high-frequency, high-reliability 1–3 kW industrial and telecom power supplies.

Availability

IPA50R299CPXKSA1 is available at Aetrix Electronics and suitable for server power supply units, telecom rectifiers, and industrial motor drives requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IPA50R299CPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ C7 family, engineered specifically for high-efficiency, high-power-density AC/DC and DC/DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current for IPA50R299CPXKSA1 at T_C = 100 °C?

The maximum continuous drain current is 13.5 A when case temperature is maintained at 100 °C, based on thermal limit and R_DS(on) derating. At T_C = 25 °C, the absolute maximum is 32 A, but practical operation is constrained by package and PCB thermal design.

Does IPA50R299CPXKSA1 require a negative gate voltage for reliable turn-off?

No. The device has a positive V_GS(th) (3.0–4.5 V) and is fully enhanced at V_GS = 10 V. A gate drive voltage of 0 V is sufficient for turn-off; −5 V is not required and offers no benefit for this CoolMOS™ C7 variant.

Can IPA50R299CPXKSA1 replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes-pin-to-pin compatible with previous C3/C6 TO-220FP variants. Key improvements include 20 % lower R_DS(on), 15 % lower Q_g, and enhanced E_AS. Layout and gate drive remain unchanged, but efficiency gains of 0.3–0.6 % are measurable at full load.

Is the drain tab electrically isolated in the TO-220FP package?

No-the drain is internally connected to the metal tab. Electrical isolation between tab and PCB mount surface is mandatory when the heatsink is grounded. Recommended isolation materials include ceramic washers or silicone pads with ≥2.5 kV dielectric strength.

IPA50R299CPXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 550 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 299mOhm @ 6.6A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 440µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1190 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-31

IPA50R299CPXKSA1 FAQ

1.How can I place an order for IPA50R299CPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA50R299CPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA50R299CPXKSA1 reliable?

The price and inventory of IPA50R299CPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA50R299CPXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA50R299CPXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA50R299CPXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA50R299CPXKSA1?

IPA50R299CPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA50R299CPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA50R299CPXKSA1?

For technical support, including IPA50R299CPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA50R299CPXKSA1 requirements.

6.How does Aetrix verify that IPA50R299CPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA50R299CPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA50R299CPXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA50R299CPXKSA1?

All IPA50R299CPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA50R299CPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA50R299CPXKSA1 part is unused and in its original packaging.

Return procedure for IPA50R299CPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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