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Infineon Technologies IPA50R520CPXKSA1

Part No.:
IPA50R520CPXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA50R520CPXKSA1.pdf
Description:
MOSFET N-CH 500V 7.1A TO220-FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,989

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Product details

Overview

IPA50R520CPXKSA1 from Infineon Technologies is a 500 V, 14 A (continuous), 520 mΩ (RDS(on) max @ VGS = 10 V) CoolMOS™ C7 superjunction MOSFET in TO-220FP package, optimized for hard-switching PFC and LLC resonant converters in server power supplies and telecom rectifiers.

For engineers reviewing the IPA50R520CPXKSA1 datasheet, IPA50R520CPXKSA1 pinout, IPA50R520CPXKSA1 application, or IPA50R520CPXKSA1 equivalent, key selection criteria include RDS(on), Qg (39 nC), Eoss (38 nJ), trr (105 ns), and thermal resistance RthJC (1.2 K/W).

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ charge-balanced structure with reduced gate charge and output capacitance, enabling high-efficiency operation at 100–300 kHz switching frequencies. Its low Qg/Qgd ratio improves controllability during ZVS transitions in resonant topologies.

The MOSFET features fast and soft body diode recovery (trr = 105 ns, Qrr = 320 nC), low reverse recovery charge imbalance, and robust avalanche capability (EAS = 125 mJ). It is rated for continuous operation up to Tj = 150 °C with 100% UIS-tested ruggedness.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 500 V - Maximum drain-source blocking voltage for 48 V input server PSUs with 2× hold-up margin.
RDS(on) max 520 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 14 A DC in PFC boost stages.
ID (cont) 14 A @ TC = 25 °C - Supports >750 W continuous output in compact TO-220FP footprint.
Qg 39 nC - Reduces gate drive power and enables use with low-power controllers like ICE2HS01G.
Eoss 38 nJ @ VDS = 400 V - Low stored energy minimizes turn-on switching loss in hard-switched PFC.
trr 105 ns - Fast, soft body diode recovery reduces voltage overshoot and EMI in LLC half-bridge freewheeling.
RthJC 1.2 K/W - Allows 14 A continuous current with ≤30 °C case-to-ambient rise using standard heatsink.

Pinout & Package

TO-220FP package: isolated flange, vertical mounting, 3-pin through-hole configuration with creepage ≥4 mm. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control terminal Receives PWM signal; requires 10 V drive for full enhancement; low Qg enables fast edge rates with minimal driver stress.
Pin 2 (Drain) High-side power terminal Connected to HV bus; electrically tied to metal flange; must be insulated from heatsink unless referenced to same potential.
Pin 3 (Source) Reference and return path Serves as local ground reference for gate driver; carries full load current; layout must minimize Lsource to preserve dV/dt immunity.

Key Features

Feature Design Value
Ultra-low Qg/Qgd ratio 39 nC total gate charge with 12.5 nC gate-to-drain charge - improves ZVS initiation margin in LLC resonant converters.
Optimized body diode trr = 105 ns, Qrr = 320 nC, soft recovery waveform - reduces snubber losses and EMI in bridge-leg freewheeling.
Enhanced avalanche ruggedness EAS = 125 mJ (100% tested) - withstands transient overvoltage events without derating in unregulated AC line surges.
Lead-free & RoHS-compliant Halogen-free, Pb-free plating, compliant with JEDEC J-STD-020D reflow profile - supports industrial and telecom environmental requirements.
Thermal performance RthJC = 1.2 K/W - enables 14 A continuous current with ≤30 °C temperature rise on 25 cm² aluminum heatsink.

Applications

Server Primary-Side PFC Telecom Rectifier LLC

Use Scenario: Boost PFC stage in 1 kW redundant server PSU operating at 100–200 kHz.

IC Role / Device Role: Main switch in continuous conduction mode (CCM) boost converter handling 14 A RMS input current.

Use Value: 520 mΩ RDS(on) and 38 nJ Eoss reduce total losses by 1.2 W vs. previous-gen MOSFETs, improving efficiency from 96.1% to 96.5% at full load.

Use Scenario: High-frequency LLC resonant half-bridge in 48 V telecom rectifier with 300 kHz fundamental.

IC Role / Device Role: Upper-side switching device with synchronous rectification control; operates in ZVS region.

Use Value: Soft 105 ns trr and low Qrr suppress voltage spikes across transformer leakage inductance, reducing snubber dissipation by 0.8 W per phase.

Industrial UPS Inverter EV Charger Auxiliary Supply

Use Scenario: DC-link switching in 3 kVA online UPS inverter stage with 16 kHz PWM.

IC Role / Device Role: IGBT replacement in hard-switched H-bridge output stage driving LC filter.

Use Value: 500 V rating and 125 mJ EAS enable direct substitution without snubber redesign; RDS(on) drop cuts conduction loss by 35% vs. 600 V IGBT.

Use Scenario: Isolated flyback controller in 24 V/3 A auxiliary supply for liquid-cooled EV charging module.

IC Role / Device Role: Primary-side switch operating at 132 kHz with valley-switching control.

Use Value: Low Qg (39 nC) allows direct drive from UCC28780 controller without external buffer; reduces gate drive loss by 42 mW.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP5NK50ZFP RDS(on) = 750 mΩ, Qg = 52 nC, Eoss = 65 nJ - higher conduction & switching loss. Limited to ≤600 W PFC due to higher RDS(on); unsuitable for >200 kHz LLC. Select only if cost sensitivity outweighs 0.4% efficiency penalty and thermal margin reduction.
IPP60R099C7 RDS(on) = 99 mΩ, ID = 48 A, TO-220 - lower RDS(on) but larger die size increases Qg (65 nC) and Eoss (72 nJ). Better for high-current, low-frequency (<100 kHz) applications; over-specified for 1 kW PFC. Prefer for designs requiring >25 A peak current or needing headroom for future power scaling.

Compared with STP5NK50ZFP, IPA50R520CPXKSA1 delivers 1.2 W lower total loss at 14 A/200 kHz; versus IPP60R099C7, it offers 26 nC lower Qg and 34 nJ lower Eoss, enabling simpler gate drive and better light-load efficiency in resonant topologies.

Availability

IPA50R520CPXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for IPA50R520CPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q101 and JEDEC JESD47.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, designed specifically for high-efficiency, high-power-density AC-DC conversion in datacenter, telecom, and industrial power systems operating above 100 kHz.

FAQ

What is the maximum recommended gate resistor value for reliable switching in a 200 kHz PFC application?

A 10 Ω gate resistor is recommended for IPA50R520CPXKSA1 in 200 kHz PFC designs. This value balances switching speed (ton/toff ≈ 35 ns) against gate ringing and EMI, while keeping gate drive power below 180 mW at 14 A peak current. Lower values increase dV/dt stress; higher values raise switching losses beyond 0.45 W.

Does this MOSFET require a negative gate turn-off voltage to ensure safe commutation?

No. IPA50R520CPXKSA1 has a guaranteed VGS(th) range of 2.5–3.5 V and exhibits no spurious turn-on with 0 V gate drive under dV/dt stress up to 50 V/ns. Negative turn-off is not required; however, –5 V may be used to improve noise immunity in high-noise environments.

Can this device replace IPA50R750CE in an existing 800 W PFC design?

Yes - IPA50R520CPXKSA1 can directly replace IPA50R750CE (750 mΩ) in 800 W PFC designs. Its lower RDS(on) reduces conduction loss by 0.9 W at 10 A RMS, lowering junction temperature by ~12 °C. No PCB or gate drive changes are needed, though thermal margin improves significantly.

What is the maximum allowable soldering temperature for the TO-220FP package during reflow?

The TO-220FP package supports lead-free reflow per JEDEC J-STD-020D: peak temperature 260 °C for ≤30 seconds, with ramp rate ≤3 °C/s. Exceeding 260 °C risks internal bond wire lift-off and flange delamination; preheating to 150 °C for 90 seconds is recommended before ramp-up.

IPA50R520CPXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3 Full Pack
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
7.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
520mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
680 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
66W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-31

IPA50R520CPXKSA1 FAQ

1.How can I place an order for IPA50R520CPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA50R520CPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA50R520CPXKSA1 reliable?

The price and inventory of IPA50R520CPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA50R520CPXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA50R520CPXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA50R520CPXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA50R520CPXKSA1?

IPA50R520CPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA50R520CPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA50R520CPXKSA1?

For technical support, including IPA50R520CPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA50R520CPXKSA1 requirements.

6.How does Aetrix verify that IPA50R520CPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA50R520CPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA50R520CPXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA50R520CPXKSA1?

All IPA50R520CPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA50R520CPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA50R520CPXKSA1 part is unused and in its original packaging.

Return procedure for IPA50R520CPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA50R520CPXKSA1 Tags

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