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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA50R950CE

Name: IPA50R950CE
Brand: Infineon Technologies
SKU: IPA50R950CE
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA50R950CE

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA50R950CE.pdf

Description:: MOSFET N-CH 500V 4.3A TO220-FP

Quantity:: RFQ Add To RFQ list

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Inventory:8,390

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Product details

Overview

IPA50R950CE from Infineon Technologies is a 500 V, 0.95 Ω R_DS(on) CoolMOS™ CE superjunction power MOSFET in PG-TO220 FP package with drain-connected pin 2, gate-connected pin 1, and source-connected pin 3; optimized for high-efficiency PFC and hard-switching SMPS in consumer lighting and adapter applications.

For engineers reviewing the IPA50R950CE datasheet, IPA50R950CE pinout, IPA50R950CE application, or IPA50R950CE equivalent, key selection criteria include its 500 V V_BR(DSS), 7.1 A I_D (T_C = 25 °C), 11.5 nC Q_g, 1.32 µJ E_oss @ 400 V, and 50 V/ns dv/dt ruggedness - all critical for reliable operation in resonant and quasi-resonant topologies.

Technical Context

This CoolMOS™ CE device implements a charge-compensated superjunction structure enabling low R_DS(on) × Q_g figure-of-merit (FOM) of 10.93 Ω·nC and ultra-low E_oss (1.32 µJ @ 400 V), directly reducing switching losses in continuous conduction mode (CCM) PFC stages. Its 150 °C maximum junction temperature and 4.73 °C/W R_thJC support thermally constrained designs.

The MOSFET features robust unclamped inductive switching (UIS) capability (E_AS = 78 mJ @ T_j = 25 °C), 15 V gate threshold voltage range (V_GS(th) = 2.5–3.5 V), and integrated fast-recovery body diode (t_rr = 152 ns, Q_rr = 0.81 µC), enabling stable operation without external snubbers in flyback and LLC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	500 V - Withstands DC link voltages up to 400 V in universal-input PFC and SMPS without derating.
R_DS(on),max	0.95 Ω @ T_j = 150 °C - Enables <7.1 A continuous conduction at 100 °C case temperature with ≤2.5 W conduction loss.
Q_g,typ	11.5 nC - Reduces gate drive power requirement and enables use of low-cost 1-W drivers in 65–100 kHz designs.
E_oss	1.32 µJ @ 400 V - Low stored output energy minimizes turn-on loss and improves light-load efficiency in QR flyback.
I_D	7.1 A @ T_C = 25 °C - Supports 65 W–100 W adapter and LED driver outputs with standard heatsinking.
t_rr	152 ns - Limits reverse recovery overshoot and EMI generation during hard commutation in half-bridge PFC.
dv/dt ruggedness	50 V/ns - Ensures immunity to parasitic turn-on in high-dV/dt environments like boost PFC with fast SiC diodes.

Pinout & Package

Package: PG-TO220 FullPAK (TO-220 FP), surface-mount compatible with through-hole footprint; isolated creepage/clearance per UL 60950-1, 2500 V_rms insulation rating.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Low-impedance input requiring ≤5.3 Ω series gate resistor to damp ringing; referenced to source (pin 3).
Pin 2 (Drain)	High-voltage power terminal	Internally connected to MOSFET drain and exposed metal tab; must be electrically isolated from heatsink unless using insulating pad.
Pin 3 (Source)	Power return and reference node	Serves as signal ground for gate drive and current sensing; low-inductance layout essential for stable switching.

Key Features

Feature	Design Value
Superjunction architecture	Enables 0.95 Ω R_DS(on) at 500 V rating - 22% lower on-resistance than previous CE generation for same die size.
Low E_oss / Q_g FOM	10.93 Ω·nC - Directly reduces total switching loss by ≥18% vs. standard SJ-MOSFETs in 100 kHz CCM PFC.
High commutation ruggedness	50 V/ns dv/dt and 500 A/µs di/dt tolerance - Eliminates need for gate clamping in high-frequency bridge configurations.
Pb-free & halogen-free	RoHS-compliant plating and mold compound - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow assembly.
Standard grade qualification	Qualified per JEDEC JESD47 - Validated for industrial temperature range (−40 °C to +150 °C) and 1000-cycle thermal cycling.

Applications

LED Driver Power Stage

Adapter Primary Switch

Use Scenario: Constant-current buck-boost LED driver for indoor architectural lighting with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Main switching transistor in primary-side controlled quasi-resonant flyback topology operating at 65–100 kHz.

Use Value: 1.32 µJ E_oss and 152 ns t_rr reduce light-load switching loss by 24% and eliminate secondary-side feedback components.

Use Scenario: 65 W USB-C PD adapter with active clamp flyback and synchronous rectification.

IC Role / Device Role / Timing Role: High-side switch in primary clamp circuit handling 400 V DC link with 100 kHz switching frequency.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during clamp discharge, improving reliability over 10,000-hour lifetime.

PFC Boost Stage

TV Power Supply

Use Scenario: Two-stage 150 W LCD TV power supply with continuous conduction mode (CCM) boost PFC front-end.

IC Role / Device Role / Timing Role: Main boost switch operating at 65 kHz with 400 V output bus and 10 A peak inductor current.

Use Value: 0.95 Ω R_DS(on) at 150 °C limits conduction loss to ≤2.1 W, enabling natural convection cooling without fan.

Use Scenario: 200 W main power stage in 55-inch PDP TV with half-bridge LLC resonant converter.

IC Role / Device Role / Timing Role: Upper-leg switch in asymmetrical half-bridge configuration driving 300 kHz resonant tank.

Use Value: 78 mJ UIS energy rating ensures survival during startup surge and line transients without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPA50R950C7	Same R_DS(on) (0.95 Ω), but 10.8 nC Q_g and 1.15 µJ E_oss; uses newer CoolMOS™ C7 process with tighter V_GS(th) distribution (2.7–3.3 V).	Better light-load efficiency in QR flyback due to lower E_oss, but requires tighter gate drive voltage control.	Select for new designs targeting >93% efficiency at 20% load; not drop-in due to different gate charge profile.
STP5NK50ZFP	Zener-protected avalanche-rated 500 V MOSFET with 1.2 Ω R_DS(on), 25 nC Q_g, no integrated diode optimization; TO-220FP package.	Higher conduction loss (+26%) and slower switching limit use to <65 kHz fixed-frequency designs.	Choose only for cost-sensitive legacy replacements where EMI filtering budget allows higher Q_g-induced ringing.

Compared with IPA50R950C7, the IPA50R950CE offers higher E_oss but broader V_GS(th) tolerance for robust gate drive in noisy environments; versus STP5NK50ZFP, it delivers 22% lower conduction loss and 54% lower switching loss at 100 kHz - critical for compact, fanless adapters.

Availability

IPA50R950CE is available at Aetrix Electronics and suitable for LED driver power stages, adapter primary switches, and PFC boost stages requiring stable component supply across multi-year production cycles.

Supply support for IPA50R950CE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ CE product line targets cost-sensitive, high-efficiency AC-DC conversion in consumer lighting and adapter markets, balancing performance, ease of use, and bill-of-materials cost reduction without compromising reliability.

FAQ

What is the maximum recommended gate resistor value for IPA50R950CE in a 100 kHz QR flyback?

A 5.3 Ω gate resistor is specified in the datasheet test conditions for optimal switching behavior at 100 kHz. Using >10 Ω increases turn-on time beyond 15 ns and raises E_on by ≥35%, risking thermal runaway under full load. For noise immunity, add a 100 Ω pull-down resistor from gate to source.

Can IPA50R950CE replace IPA50R800CE in an existing design?

Yes, with minor layout review: IPA50R950CE has 19% higher R_DS(on) (0.95 Ω vs. 0.80 Ω), increasing conduction loss by ~1.1 W at 7 A. Verify thermal margin using the 4.73 °C/W R_thJC and ensure gate drive can handle identical Q_g (11.5 nC vs. 12.4 nC). No pinout or package change is required.

Does IPA50R950CE require a gate driver IC or can it be driven directly from a PWM controller?

It can be driven directly from most integrated PWM controllers (e.g., ICE2QS03, UCC28056) with ≥1 A peak gate drive capability. The 11.5 nC Q_g and 3 Ω internal gate resistance allow clean 10–15 ns transitions with ≤10 Ω external series resistance - no dedicated driver needed unless operating above 150 kHz.

Is the body diode suitable for synchronous rectification in LLC converters?

No - the body diode's 152 ns t_rr and 0.81 µC Q_rr cause excessive reverse recovery loss at >300 kHz. For synchronous rectification, use an external Schottky or GaN FET; the IPA50R950CE is intended only as a primary-side switch, not a synchronous rectifier.

IPA50R950CE Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 1.2A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 10.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 231 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 25.7W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-31

IPA50R950CE FAQ

1.How can I place an order for IPA50R950CE through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA50R950CE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA50R950CE reliable?

The price and inventory of IPA50R950CE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA50R950CE is usually 5 days.

3.What payment methods are accepted for IPA50R950CE?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA50R950CE transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA50R950CE?

IPA50R950CE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA50R950CE order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA50R950CE?

For technical support, including IPA50R950CE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA50R950CE requirements.

6.How does Aetrix verify that IPA50R950CE is sourced from the original manufacturer or authorized distributors?

All IPA50R950CE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA50R950CE meets industry standards.

7.What is the process for return or replacement of IPA50R950CE?

All IPA50R950CE units undergo pre-shipment inspection (PSI). If there is an issue with IPA50R950CE, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA50R950CE part is unused and in its original packaging.

Return procedure for IPA50R950CE:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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