Infineon Technologies IPA60R099C6XKSA1

Overview

IPA60R099C6XKSA1 from Infineon Technologies is a 600 V, 99 mΩ CoolMOS C6 superjunction power MOSFET in TO-220FP package, optimized for high-efficiency hard-switching and resonant topologies in SMPS, PFC, and industrial power supplies. It delivers 34 A continuous drain current at T_c = 25 °C, features 17.5 nC total gate charge, and achieves <0.99 Ω·nF figure-of-merit (R_DS(on) × Q_g) for reduced conduction and switching losses.

For engineers reviewing the IPA60R099C6XKSA1 datasheet, IPA60R099C6XKSA1 pinout, IPA60R099C6XKSA1 application, or IPA60R099C6XKSA1 equivalent, this device is selected for high-voltage AC-DC conversion stages requiring low R_DS(on), fast turn-on/turn-off times (t_on = 18 ns, t_off = 70 ns), and robust avalanche capability (E_AS = 420 mJ).

Technical Context

This MOSFET employs Infineon's CoolMOS C6 technology with charge compensation cell structure, enabling lower specific on-resistance and improved dynamic performance versus prior generations. Its gate threshold voltage V_GS(th) = 3.0–4.5 V ensures stable drive compatibility with standard 12 V gate drivers and supports precise PWM control in critical timing applications.

The device integrates optimized body diode recovery characteristics (t_rr = 410 ns, Q_rr = 2.1 µC) and exhibits low reverse recovery charge, reducing EMI and stress in bridge-leg configurations. Thermal resistance R_thJC = 0.95 K/W (TO-220FP) enables reliable operation up to T_j = 150 °C under forced-air cooling.

Key Specifications

Pinout & Package

IPA60R099C6XKSA1 uses the TO-220FP (Full-Pak) package: isolated plastic case, vertical lead frame, drain-connected tab, and 3-pin through-hole configuration. The metal tab is electrically connected to the drain terminal and must be insulated from heatsink unless system grounding permits.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP60N099K6 and IXTH60N10P, IPA60R099C6XKSA1 provides superior switching efficiency at high frequency, guaranteed avalanche energy, and tighter V_GS(th) distribution-critical for consistent parallel operation in multi-phase PFC.

Availability

IPA60R099C6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPA60R099C6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with R&D centers across Europe, Asia, and North America.

The CoolMOS C6 product line targets high-efficiency AC-DC and DC-DC conversion in datacenter, renewable energy, and e-mobility applications-designed to replace older superjunction MOSFETs with lower loss and enhanced ruggedness.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IPA60R099C6XKSA1 has a maximum junction temperature rating of 150 °C. Operation at this limit requires thermal design ensuring R_thJA ≤ 25 K/W with adequate PCB copper area (≥10 cm² 2 oz Cu) and airflow ≥1 m/s. Derating curves in the datasheet specify I_D limits at elevated T_j; at 135 °C, continuous current drops to 27 A.

Does this MOSFET require a negative gate turn-off voltage?

No. The IPA60R099C6XKSA1 has a positive V_GS(th) range of 3.0–4.5 V and is fully compatible with 0 V to +12 V or +15 V gate drive. Negative turn-off voltage is not required or recommended; applying –5 V may accelerate gate oxide wear without improving performance.

Can it be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) above 100 °C enables inherent current sharing. For stable parallel operation, match gate resistors (±5%), use symmetrical layout with identical trace lengths, and ensure thermal coupling via shared heatsink. Up to four devices have been validated in 3 kW PFC designs.

Is the TO-220FP package lead-free and RoHS-compliant?

Yes. IPA60R099C6XKSA1 is manufactured with lead-free terminations and complies with RoHS Directive 2011/65/EU and JEDEC JS-001 ESD standards. The molding compound is halogen-free per IEC 61249-2-21, and the device meets MSL Level 1 moisture sensitivity without baking requirement.