Infineon Technologies IPA60R120P7E8191XKSA1

Overview

IPA60R120P7E8191XKSA1 from Infineon Technologies is a 600 V, 120 mΩ superjunction N-channel power MOSFET in PG-TO220 FP package, featuring integrated body diode and ESD protection. It delivers 26 A continuous drain current at T_C = 25°C, 36 nC total gate charge, and 4.0 µJ output switching energy at 400 V - optimized for PFC and LLC resonant converters in server PSUs and telecom rectifiers.

For engineers reviewing the IPA60R120P7E8191XKSA1 datasheet, IPA60R120P7E8191XKSA1 pinout, IPA60R120P7E8191XKSA1 application, or IPA60R120P7E8191XKSA1 equivalent, key selection criteria include hard-commutation ruggedness (900 A/µs di_F/dt), low ringing tendency, 2 kV HBM ESD rating, and R_DS(on) × area < 1 Ω·mm² enabling compact thermal design.

Technical Context

This CoolMOS™ P7 device implements superjunction architecture with optimized charge balancing for simultaneous reduction of conduction and switching losses. Its gate plateau voltage is 5.2 V, and dynamic parameters include C_iss = 1544 pF, C_oss = 27 pF, and t_d(off) = 81 ns under 400 V / 8.2 A conditions.

The integrated body diode supports bidirectional current flow with trr = 207 ns and Q_rr = 1.9 µC at 400 V, while dv/dt ruggedness reaches 80 V/ns (low-side) and 50 V/ns (diode reverse). Thermal resistance R_thJC is 4.49 °C/W, enabling high-power density operation up to 150 °C junction temperature.

Key Specifications

Pinout & Package

Package: PG-TO220 FP (FullPAK), through-hole, isolated drain tab, screw-mount compatible (M2.5).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW60R099P7 and STP60N120, IPA60R120P7E8191XKSA1 offers optimal balance of switching speed (36 nC Q_g), ruggedness (900 A/µs), and system-level integration (integrated ESD), making it preferred for high-reliability telecom and server power.

Availability

IPA60R120P7E8191XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV power boards, and industrial UPS inverters requiring stable component supply, JEDEC-qualified industrial-grade reliability, and long-term lifecycle support.

Supply support for IPA60R120P7E8191XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and qualification infrastructure aligned to industrial and automotive standards.

This device belongs to the CoolMOS™ P7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current for IPA60R120P7E8191XKSA1 at 100°C case temperature?

The maximum continuous drain current is 16 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This derating reflects thermal limitations of the PG-TO220 FP package and ensures safe operation within the 150°C maximum junction temperature limit under sustained load.

Does IPA60R120P7E8191XKSA1 require external gate resistors for stable operation?

Yes - a gate resistor of 5.3 Ω is used in the datasheet's switching time test circuit (Table 9), and Infineon recommends 5–10 Ω for most applications to dampen ringing and control dV/dt. Ferrite beads are advised when paralleling multiple devices to suppress gate loop oscillations.

Can IPA60R120P7E8191XKSA1 replace older CoolMOS™ P6 devices in existing designs?

Yes - it is a direct drop-in replacement for IPA60R120P6 in PG-TO220 FP package with identical pinout and improved specs: 15% lower E_oss, 20% lower Q_g, and enhanced di_F/dt capability. No layout changes are required, though gate drive strength should be verified for faster switching edges.

Is the drain tab of IPA60R120P7E8191XKSA1 electrically isolated from the package?

Yes - the PG-TO220 FP package features an isolated drain tab rated for 2500 V_rms insulation withstand voltage (1 minute, 25°C), enabling direct heatsink mounting without insulating pads in floating-drain configurations such as high-side switches in half-bridge topologies.