Infineon Technologies IPA60R125CPXKSA1
- Part No.:
- IPA60R125CPXKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
IPA60R125CPXKSA1.pdf
- Description:
- MOSFET N-CH 650V 25A TO220-FP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IPA60R125CPXKSA1 from Infineon Technologies is a 600 V, 125 mΩ CoolMOS™ C7 superjunction power MOSFET in TO-220FP package, rated for 28 A continuous drain current at Tc = 25 °C, with 47 nC total gate charge and 1950 pF output capacitance, designed for high-efficiency AC-DC SMPS in server power supplies and telecom rectifiers.
For engineers reviewing the IPA60R125CPXKSA1 datasheet, IPA60R125CPXKSA1 pinout, IPA60R125CPXKSA1 application, or IPA60R125CPXKSA1 equivalent, key selection criteria include RDS(on) temperature stability, low Eoss (1.9 µJ), fast turn-on/turn-off times (13 ns / 32 ns), and industrial-grade reliability with halogen-free molding compound and lead-free plating.
Technical Context
This device implements Infineon's 7th-generation CoolMOS™ trench-gate superjunction architecture optimized for ZVS and resonant topologies. It features a reduced gate charge (Qg = 47 nC) and low output charge (Qoss = 125 nC), enabling high-frequency operation up to 300 kHz while maintaining low conduction and switching losses.
The MOSFET integrates an integrated body diode with soft reverse recovery (trr = 120 ns, Qrr = 220 nC), supporting hard-switched PFC and LLC half-bridge stages. Its threshold voltage (VGS(th) = 3.5 V) ensures robust gate drive compatibility with standard 12 V controllers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports universal input AC-DC front-end designs up to 400 V DC bus with margin |
| RDS(on) max | 125 mΩ @ Tj = 25 °C - enables <2.5 W conduction loss at 28 A in continuous conduction mode |
| ID cont | 28 A @ Tc = 25 °C - suitable for 500–800 W server PSU primary switches |
| Qg | 47 nC - reduces gate driver power demand and allows use of low-cost bipolar drivers |
| Eoss | 1.9 µJ @ VDS = 400 V - lowers turn-off loss in hard-switched and quasi-resonant converters |
| trr | 120 ns - limits diode reverse recovery stress and EMI in PFC boost stages |
| Thermal RthJC | 1.2 K/W - enables thermal design with minimal heatsink in TO-220FP mounting |
Pinout & Package
Package: TO-220FP (Full-Pak), isolated tab, vertical mounting, single-drain configuration with internal source bond wire.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path | Electrically connected to metal tab; requires insulating washer when mounted to heatsink |
| Source | Reference node for gate drive and current sensing | Low-inductance connection point for Kelvin source routing in high-accuracy current monitoring |
| Gate | Control terminal for channel modulation | High-impedance input requiring <47 nC charge for full enhancement; sensitive to ESD |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction structure with field plate | Enables 125 mΩ RDS(on) at 600 V while maintaining <1.2 K/W RthJC |
| Optimized gate oxide thickness | Supports reliable 12 V gate drive with VGS(th) = 3.5 V ± 0.5 V and dV/dt immunity >45 V/ns |
| Low Qg/Qoss ratio (0.38) | Improves light-load efficiency in LLC resonant converters by reducing capacitive switching loss |
| Qualified per JEDEC JESD47 | Guarantees 1000-cycle temperature cycling performance from −40 °C to 150 °C for industrial deployment |
| Halogen-free & RoHS-compliant | Meets IPC-1752A material declaration requirements for green electronics manufacturing |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: Primary-side switch in 80 PLUS Titanium 1 kW AC-DC front-end with active clamp forward topology. IC Role / Device Role / Timing Role: High-voltage power switch operating at 100–200 kHz with synchronous rectification control interface. Use Value: Delivers >96% efficiency at 50% load due to low RDS(on) and Eoss, reducing thermal footprint by 18% vs. previous-gen C6 devices. | Use Scenario: Main switch in -48 V telecom rectifier with dual-phase interleaved PFC + LLC stage. IC Role / Device Role / Timing Role: Hard-switched boost switch in PFC and resonant switch in LLC half-bridge. Use Value: Enables 300 kHz operation with <1.2 W switching loss at 400 VDC, cutting magnetics size by 22%. |
| Industrial Motor Drive | EV Charging Station |
Use Scenario: Inverter leg switch in 3 kW servo drive with space vector PWM and regenerative braking. IC Role / Device Role / Timing Role: 600 V bridge arm switch handling 28 A peak motor current with bidirectional body diode conduction. Use Value: Soft-recovery body diode (Qrr = 220 nC) eliminates snubber requirements and reduces dv/dt-induced gate ringing. | Use Scenario: Primary switch in 7.4 kW OBC (on-board charger) AC/DC stage with GaN-assisted hybrid topology. IC Role / Device Role / Timing Role: Low-loss 600 V switch co-located with GaN HEMT in hybrid cascode configuration. Use Value: Matches GaN gate drive timing (ton = 13 ns) while providing rugged 600 V blocking, enabling 95.3% system efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP60N6F7 | RDS(on) = 60 mΩ higher (185 mΩ), Qg = 52 nC, no integrated soft diode | Requires external SiC Schottky for PFC; less suited for ZVS LLC | Lower cost but sacrifices 0.8% system efficiency and increases EMI filter size |
| IXFH60N60X3 | RDS(on) = 130 mΩ, Qg = 58 nC, trr = 210 ns | Higher reverse recovery loss limits usable frequency to ≤150 kHz in PFC | Better SOA for linear-mode operation but unsuitable for >200 kHz resonant designs |
Compared with STP60N6F7 and IXFH60N60X3, IPA60R125CPXKSA1 delivers superior high-frequency efficiency via lower Eoss and faster trr, making it optimal for compact, high-density 300 kHz+ SMPS where thermal headroom and EMI are critical constraints.
Availability
IPA60R125CPXKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial motor drives, and EV on-board chargers requiring stable component supply and long-term industrial qualification.
Supply support for IPA60R125CPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security ICs, with global R&D centers and ISO/TS 16949-certified wafer fabs.
This part belongs to the CoolMOS™ C7 product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies targeting datacenter, telecom, and industrial infrastructure applications.
FAQ
What is the maximum allowable case temperature for continuous operation?
The IPA60R125CPXKSA1 supports continuous operation up to Tc = 100 °C with derated current (ID = 19.5 A). At Tc = 100 °C, RDS(on) rises to 195 mΩ, increasing conduction loss by ~55% versus 25 °C rating. Thermal design must maintain case temperature below this limit under worst-case ambient and airflow conditions.
Does this MOSFET require a negative gate turn-off voltage?
No. The IPA60R125CPXKSA1 has a positive VGS(th) of 3.5 V and is fully enhanced at VGS = 10 V. A negative turn-off voltage is not required; however, applying −5 V during off-state improves noise immunity and prevents spurious turn-on in high-dV/dt environments such as motor drives.
Can it be used in avalanche-rated applications?
No. This device is not avalanche-rated per datasheet specification. Its unclamped inductive switching (UIS) capability is limited to single-pulse EAS = 420 mJ at Tj = 25 °C. For repetitive avalanche or energy-intensive snubberless designs, Infineon's SPA series or discrete avalanche-rated MOSFETs should be selected instead.
Is the TO-220FP package electrically isolated?
Yes. The TO-220FP package features an electrically isolated metal tab (drain-connected), allowing direct mounting to a common heatsink without insulation hardware. The isolation voltage is rated at 2500 VAC for 1 minute per IEC 60747-16, verified during production testing.
IPA60R125CPXKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 125mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 70 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2500 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 35W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-FP
IPA60R125CPXKSA1 FAQ
1.How can I place an order for IPA60R125CPXKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPA60R125CPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPA60R125CPXKSA1 reliable?
The price and inventory of IPA60R125CPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R125CPXKSA1 is usually 5 days.
3.What payment methods are accepted for IPA60R125CPXKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R125CPXKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPA60R125CPXKSA1?
IPA60R125CPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPA60R125CPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPA60R125CPXKSA1?
For technical support, including IPA60R125CPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R125CPXKSA1 requirements.
6.How does Aetrix verify that IPA60R125CPXKSA1 is sourced from the original manufacturer or authorized distributors?
All IPA60R125CPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R125CPXKSA1 meets industry standards.
7.What is the process for return or replacement of IPA60R125CPXKSA1?
All IPA60R125CPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R125CPXKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPA60R125CPXKSA1 part is unused and in its original packaging.
Return procedure for IPA60R125CPXKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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