Infineon Technologies IPA60R125P6XKSA1
- Part No.:
- IPA60R125P6XKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
IPA60R125P6XKSA1.pdf
- Description:
- MOSFET N-CH 600V 30A TO220-FP
- Quantity:
- Payment:

- Shipping:

Inventory:8,969
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Product details
Overview
IPA60R125P6XKSA1 from Infineon Technologies is a 600 V, 125 mΩ superjunction N-channel power MOSFET in the CoolMOS™ P6 family, optimized for high-efficiency hard-switching and resonant SMPS topologies. It delivers 30 A continuous drain current (TC = 25°C), 87 A pulsed current, and ultra-low gate charge (56 nC) with Eoss of 7.2 µJ at 400 V - enabling compact, cooler-running PFC and main switch stages in server PSUs and telecom rectifiers.
For engineers reviewing the IPA60R125P6XKSA1 datasheet, IPA60R125P6XKSA1 pinout, IPA60R125P6XKSA1 application, or IPA60R125P6XKSA1 equivalent, key selection criteria include RDS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), body diode commutation capability (300 A/µs), and TO-220 FullPAK thermal performance (RthJC = 3.65 °C/W).
Technical Context
This device implements Infineon's superjunction architecture with optimized charge balancing for reduced conduction and switching losses. Its low FOM (RDS(on) × Qg = 7.0 mΩ·nC typ.) enables high-frequency operation without sacrificing robustness - supported by 100 V/ns MOSFET dv/dt rating and 15 V/ns reverse diode dv/dt tolerance.
The integrated body diode features fast recovery (trr = 385 ns), low Qrr (7 µC), and high di/dt capability (300 A/µs), making it suitable for synchronous rectification and bidirectional energy transfer in LLC and phase-shifted full-bridge converters where diode stress and EMI are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 600 V - supports 400 V DC bus designs with 50% voltage margin for transient spikes in industrial and telecom rectifiers |
| RDS(on) max | 125 mΩ @ Tj = 150°C - ensures stable conduction loss under worst-case thermal conditions in enclosed power supplies |
| Qg typ | 56 nC - reduces gate drive power and enables use of smaller, lower-cost gate drivers in high-frequency (>100 kHz) PFC stages |
| Eoss @ 400 V | 7.2 µJ - lowers turn-off switching loss and improves efficiency in ZVS/ZCS resonant converters |
| ID,pulse | 87 A - supports peak-load handling in UPS and server PSUs during cold-start or overload transients |
| Body diode di/dt | 300 A/µs - sustains high-current commutation without oscillation or failure in hard-switched bridge legs |
| Tj max | 150 °C - qualified for industrial-grade operation per JEDEC J-STD-20/JESD22, enabling reliable deployment in unventilated enclosures |
Pinout & Package
IPA60R125P6XKSA1 is housed in a TO-220 FullPAK (PG-TO220FP-3-1) package with isolated tab. The package integrates a thermally enhanced leadframe and internal source bonding to minimize parasitic inductance and improve thermal resistance (RthJC = 3.65 °C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Low-impedance input requiring ≤10 V drive; RG = 1.7 Ω enables fast, stable switching with minimal ringing |
| Pin 2 (Drain) | High-voltage power node | Internally connected to isolated metal tab; rated for 600 V blocking and 87 A pulse current |
| Pin 3 (Source) | Reference and return path | Common connection for gate driver return and load current; low-inductance layout critical for EMI control |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction structure with optimized charge balance | Reduces RDS(on) × Qg FOM to 7.0 mΩ·nC, enabling >96% efficiency in 100–300 kHz PFC stages |
| 100 V/ns MOSFET dv/dt ruggedness | Prevents false turn-on during high-slew-rate switching, eliminating need for negative gate bias in half-bridge configurations |
| 300 A/µs body diode commutation rating | Supports reliable zero-voltage switching in LLC resonant converters without external snubbers or diode clamping |
| JEDEC industrial qualification (J-STD-20/JESD22) | Validated for 15-year field life in harsh environments including elevated ambient temperature and thermal cycling |
| Halogen-free mold compound & Pb-free plating | Meets RoHS 2011/65/EU and IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for reflow compatibility |
Applications
| Server Power Supply | Telecom Rectifier |
|---|---|
Use Scenario: Primary-side switch in active clamp forward or LLC resonant converter delivering 1–3 kW at >95% efficiency. IC Role / Device Role / Timing Role: High-voltage power switch managing 400 V DC bus with precise timing-controlled ZVS transitions. Use Value: Low Eoss (7.2 µJ) and fast trr (385 ns) reduce switching loss and EMI, enabling smaller heatsinks and passive filters. | Use Scenario: Boost PFC stage in -48 V telecom rectifier operating continuously at 60–85°C ambient. IC Role / Device Role / Timing Role: Critical conduction mode (CrM) or continuous conduction mode (CCM) switch regulating input current waveform. Use Value: Stable RDS(on) up to 150°C and 100 V/ns dv/dt rating ensure reliability under sustained overload and line surge conditions. |
| Industrial UPS | LED Driver (High-Power) |
Use Scenario: Inverter leg switch in double-conversion UPS handling motor loads and generator inputs with high crest factor. IC Role / Device Role / Timing Role: Bidirectional energy-handling switch supporting regenerative braking and battery charging paths. Use Value: 300 A/µs body diode di/dt and 636 mJ single-pulse avalanche energy prevent failure during short-circuit or inductive kickback events. | Use Scenario: Primary-side switch in high-power constant-current LED driver for stadium lighting or horticulture systems. IC Role / Device Role / Timing Role: Hard-switched PWM transistor controlling 350–1000 V DC string voltage with tight current regulation. Use Value: Low Qg (56 nC) and high ID,pulse (87 A) allow high-frequency dimming control while maintaining thermal headroom at 70°C case temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPP60R125P6 | Same die, TO-220 (non-FullPAK) package; RthJC = 0.57 °C/W vs. 3.65 °C/W | Better thermal performance in forced-air-cooled designs; requires external heatsink mounting | Select when board space allows standard TO-220 footprint and thermal design uses bolt-down heatsink |
| IPW60R125P6 | Same die, TO-247 package; higher Ptot (219 W vs. 34 W) and lower RthJC (0.57 °C/W) | Suitable for >500 W continuous output where FullPAK thermal limits are exceeded | Choose for high-power industrial SMPS where peak power density and thermal derating are primary constraints |
Compared with IPP60R125P6 and IPW60R125P6, IPA60R125P6XKSA1 trades absolute thermal performance for PCB-level integration and isolation - its FullPAK construction eliminates creepage concerns in compact AC/DC adapters and enables direct mounting on FR4 without insulating pads.
Availability
IPA60R125P6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial-grade reliability.
Supply support for IPA60R125P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D centers.
The CoolMOS™ P6 product line was engineered specifically for high-efficiency, high-density switched-mode power supplies targeting datacenter, telecom, and industrial infrastructure - emphasizing low-loss switching, ruggedness, and ease of drive.
FAQ
What is the maximum continuous drain current for IPA60R125P6XKSA1 at 100°C case temperature?
The maximum continuous drain current is 19.0 A at TC = 100°C, as specified in Table 2 of the Rev. 2.0 datasheet. This derating reflects thermal limitations of the TO-220 FullPAK package (RthJC = 3.65 °C/W), not silicon capability - the die supports higher current with improved cooling.
Does IPA60R125P6XKSA1 require a negative gate voltage for reliable turn-off?
No. The device features high MOSFET dv/dt ruggedness (100 V/ns) and a gate threshold voltage range of 3.5–4.5 V, enabling robust turn-off with 0 to +12 V gate drive. Negative bias is unnecessary unless operating in extreme high-noise bridge configurations with >150 V/ns slew rates.
Can IPA60R125P6XKSA1 be paralleled with identical units?
Yes, but gate drive must be carefully balanced: Infineon recommends using individual ferrite beads on each gate line or separate totem-pole drivers to suppress oscillation and ensure current sharing. Layout symmetry and matched trace inductance are mandatory for stable parallel operation.
Is the TO-220 FullPAK tab electrically isolated in IPA60R125P6XKSA1?
Yes. The metal tab is internally insulated and rated for 2500 Vrms isolation (1 minute, 25°C), as confirmed in Table 2. This allows direct mounting to grounded heatsinks without additional insulation, reducing thermal resistance and simplifying mechanical design.
IPA60R125P6XKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ P6
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 125mOhm @ 11.6A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs:
- 56 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2660 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 34W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-FP
IPA60R125P6XKSA1 FAQ
1.How can I place an order for IPA60R125P6XKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPA60R125P6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPA60R125P6XKSA1 reliable?
The price and inventory of IPA60R125P6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R125P6XKSA1 is usually 5 days.
3.What payment methods are accepted for IPA60R125P6XKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R125P6XKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPA60R125P6XKSA1?
IPA60R125P6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPA60R125P6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPA60R125P6XKSA1?
For technical support, including IPA60R125P6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R125P6XKSA1 requirements.
6.How does Aetrix verify that IPA60R125P6XKSA1 is sourced from the original manufacturer or authorized distributors?
All IPA60R125P6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R125P6XKSA1 meets industry standards.
7.What is the process for return or replacement of IPA60R125P6XKSA1?
All IPA60R125P6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R125P6XKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPA60R125P6XKSA1 part is unused and in its original packaging.
Return procedure for IPA60R125P6XKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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