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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA60R190P6XKSA1

Name: IPA60R190P6XKSA1
Brand: Infineon Technologies
SKU: IPA60R190P6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA60R190P6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA60R190P6XKSA1.pdf

Description:: MOSFET N-CH 600V 20.2A TO220-FP

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Product details

Overview

IPA60R190P6XKSA1 from Infineon Technologies is a 600 V, 190 mΩ superjunction N-channel power MOSFET in TO-220 FullPAK package, optimized for high-efficiency PFC and hard-switching SMPS stages. It delivers 57 A pulsed drain current, 37 nC total gate charge, and 4.9 µJ output energy at 400 V, enabling compact, cooler-running server PSUs and telecom rectifiers.

For engineers reviewing the IPA60R190P6XKSA1 datasheet, IPA60R190P6XKSA1 pinout, IPA60R190P6XKSA1 application, or IPA60R190P6XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven turn-off loss, dv/dt ruggedness (100 V/ns), and body diode commutation capability (500 A/µs) in high-frequency resonant topologies.

Technical Context

This CoolMOS™ P6 device implements a charge-balanced superjunction structure with optimized cell pitch and epitaxial doping to achieve ultra-low FOM (R_DS(on) × Q_g = 7.03 Ω·nC). Its gate plateau voltage of 6.1 V ensures robust Miller immunity during high-dv/dt switching events in bridge-leg configurations.

The integrated body diode exhibits 310 ns reverse recovery time and 4 µC Q_rr at 400 V, supporting ZVS operation in LLC resonant converters while maintaining 150 °C maximum junction temperature and 50 Ncm mounting torque specification for mechanical reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50% safety margin for transient overvoltage in industrial AC-DC front-ends
R_DS(on),max	190 mΩ @ T_j = 150°C - enables low conduction loss in continuous 12.7 A operation at full thermal rating
Q_g,typ	37 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers in high-frequency (>100 kHz) PFC stages
E_oss@400V	4.9 µJ - minimizes turn-off switching loss and improves efficiency in hard-switched flyback and forward converters
dv/dt ruggedness	100 V/ns - prevents spurious turn-on in high-side half-bridge configurations without additional snubbing
Body diode dI/dt	500 A/µs - sustains fast commutation in synchronous rectification and resonant LLC secondary-side switching
T_j,max	150 °C - qualified for industrial-grade operation per JEDEC J-STD-20 and JESD22 standards

Pinout & Package

IPA60R190P6XKSA1 uses the TO-220 FullPAK (PG-TO220FP) package with isolated drain tab and standard 3-pin layout. Thermal resistance R_thJC is 3.7 °C/W, requiring careful heatsink interface design due to higher junction-to-case impedance versus non-FullPAK variants.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control terminal; requires <3.4 Ω series gate resistor to damp ringing and limit peak current during 13 V drive
Pin 2 / Tab	Drain	High-voltage power terminal; electrically isolated from mounting surface; rated for 2500 V_rms insulation withstand
Pin 3	Source	Power return path and gate reference; connects to PCB ground plane; carries full load current and diode reverse recovery charge

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V rating with 190 mΩ R_DS(on), reducing conduction loss by ~35% vs. planar MOSFETs at same voltage class
Low E_oss (4.9 µJ @ 400 V)	Directly lowers turn-off energy loss, improving efficiency in 65–300 kHz hard-switched topologies without increasing gate drive complexity
100 V/ns dv/dt ruggedness	Eliminates need for external Miller clamping in high-side switch applications, simplifying gate driver circuitry and PCB layout
500 A/µs body diode dI/dt	Supports zero-current switching in asymmetrical half-bridge PFC and enables reliable synchronous rectification in LLC secondaries
JEDEC industrial qualification	Validated for 150 °C continuous operation and thermal cycling per JESD22-A104, ensuring long-term reliability in server and telecom power supplies

Applications

Server PSU PFC Stage

Telecom Rectifier Module

Use Scenario: Active PFC boost converter operating at 65–100 kHz in 1U 1 kW telecom rectifier with universal AC input.

IC Role / Device Role / Timing Role: High-side switching element in continuous conduction mode (CCM) boost stage; handles 12.7 A RMS input current.

Use Value: 190 mΩ R_DS(on) and 4.9 µJ E_oss reduce total losses by 1.8 W vs. predecessor CoolMOS™ P5, enabling passive cooling in constrained 1U form factor.

Use Scenario: Primary-side switch in phase-shifted full-bridge DC-DC converter for -48 V telecom distribution.

IC Role / Device Role / Timing Role: High-voltage primary switch with ZVS capability; operates at 100–200 kHz with 50% duty cycle.

Use Value: 100 V/ns dv/dt rating and 500 A/µs body diode dI/dt ensure reliable soft-switching across line/load transients without auxiliary snubbers.

LCD TV Power Supply

Industrial UPS Inverter Stage

Use Scenario: Hard-switched quasi-resonant flyback controller powering mainboard and backlight in 55″ LCD TV.

IC Role / Device Role / Timing Role: Primary switch handling 57 A pulsed current during startup and overload conditions.

Use Value: 37 nC Q_g allows direct drive from low-power PWM ICs (e.g., ICE2QS03G), eliminating discrete gate driver and saving BOM cost.

Use Scenario: Half-bridge leg switch in 3 kVA online UPS inverter delivering pure sine wave output.

IC Role / Device Role / Timing Role: Low-loss switching device in 16 kHz PWM inverter stage; subjected to repetitive avalanche stress during output short-circuit events.

Use Value: 419 mJ single-pulse avalanche energy rating ensures survivability during 20 ms short-circuit faults without derating or external protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190P6	Same die, TO-220 (non-FullPAK) package; R_thJC = 0.83 °C/W vs. 3.7 °C/W	Better thermal performance in forced-air-cooled designs; requires external isolation for drain mounting	Select when heatsink interface thermal resistance < 0.5 °C/W is achievable and isolation creepage is managed externally
IPW60R190P6	Same die, TO-247 package; higher power dissipation (151 W vs. 34 W) and larger footprint	Suitable for >500 W open-frame PSUs where board space permits larger package and higher thermal mass	Choose for high-reliability industrial systems needing maximum derating margin and proven field history in TO-247

Compared with IPP60R190P6 and IPW60R190P6, IPA60R190P6XKSA1 trades thermal performance for system-level integration: its FullPAK construction eliminates external drain isolation but demands tighter thermal interface design, making it optimal for space-constrained, cost-sensitive consumer and telecom power modules.

Availability

IPA60R190P6XKSA1 is available at Aetrix Electronics and suitable for server PSUs, telecom rectifiers, and LCD TV power supplies requiring stable component supply and industrial-grade qualification.

Supply support for IPA60R190P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

The CoolMOS™ P6 product line targets high-efficiency AC-DC conversion in computing, telecom, and consumer power supplies, emphasizing low-loss superjunction MOSFETs with enhanced ruggedness and ease of use.

FAQ

What is the maximum continuous drain current for IPA60R190P6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 12.7 A at T_C = 100°C, limited by junction temperature reaching 150°C. This value is derived from thermal resistance R_thJC = 3.7 °C/W and power dissipation derating curves in the official datasheet Rev. 2.2, not extrapolated from 25°C ratings.

Does IPA60R190P6XKSA1 require a gate resistor, and what value is recommended?

Yes, a series gate resistor is required to control switching speed and suppress oscillation. The datasheet specifies R_G = 3.4 Ω for characterization; typical design values range from 2.2 Ω to 10 Ω depending on EMI requirements and drive strength, with 4.7 Ω commonly used for balanced turn-on/turn-off loss trade-offs.

Can IPA60R190P6XKSA1 be paralleled with identical units, and what precautions apply?

Yes, parallel operation is supported but requires individual gate resistors and ferrite beads on each gate line to prevent dynamic current imbalance. The datasheet explicitly recommends this approach due to inherent parameter spread in R_DS(on) and threshold voltage, especially under high-temperature, high-current conditions.

Is the drain tab of IPA60R190P6XKSA1 electrically isolated, and what is its insulation rating?

Yes, the drain tab is fully insulated from the mounting surface. It is rated for 2500 V_rms insulation withstand voltage at 25°C for 1 minute, as verified per IEC 60747-8 and specified in Table 2 of the datasheet for TO-220FP package variants.

IPA60R190P6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P6

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 20.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 7.6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 630µ

Gate Charge (Qg) (Max) @ Vgs:: 37 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1750 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA60R190P6XKSA1 FAQ

1.How can I place an order for IPA60R190P6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R190P6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R190P6XKSA1 reliable?

The price and inventory of IPA60R190P6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R190P6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R190P6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R190P6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R190P6XKSA1?

IPA60R190P6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R190P6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R190P6XKSA1?

For technical support, including IPA60R190P6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R190P6XKSA1 requirements.

6.How does Aetrix verify that IPA60R190P6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R190P6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R190P6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R190P6XKSA1?

All IPA60R190P6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R190P6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R190P6XKSA1 part is unused and in its original packaging.

Return procedure for IPA60R190P6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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