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Infineon Technologies IPA60R250CPXKSA1

Part No.:
IPA60R250CPXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
AetrixIPA60R250CPXKSA1.pdf
Description:
MOSFET N-CH 650V 12A TO220-FP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,500

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Product details

Overview

IPA60R250CPXKSA1 from Infineon Technologies is a 600 V, 0.25 Ω RDS(on) CoolMOS® C-series superjunction power MOSFET in PG-TO220FP package, optimized for hard-switching SMPS topologies including PFC and main switch stages. It delivers 12 A continuous drain current at TC = 25 °C, 26 nC total gate charge, and 345 mJ single-pulse avalanche energy - enabling high-efficiency, compact 300–500 W AC/DC adapters and server PSUs.

For engineers reviewing the IPA60R250CPXKSA1 datasheet, IPA60R250CPXKSA1 pinout, IPA60R250CPXKSA1 application, or IPA60R250CPXKSA1 equivalent, key selection criteria include its 600 V V(BR)DSS, ultra-low RDS(on) × Qg figure-of-merit, extreme dv/dt ruggedness (480 V/ns), and JEDEC-qualified reliability for industrial power supplies.

Technical Context

This device implements a superjunction trench-gate structure with optimized charge compensation to reduce conduction and switching losses simultaneously. Its 26 nC Qg and 9 nC Qgd enable fast, low-loss switching at 65–100 kHz in continuous conduction mode PFC and 50–75 kHz in LLC resonant converters.

The integrated body diode features 330 ns reverse recovery time and 4.5 µC Qrr, supporting ZVS-capable topologies while maintaining robust 15 V/ns reverse diode dv/dt rating under specified test conditions (IF ≤ ID, di/dt ≤ 200 A/µs).

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS600 V - Withstands full 400 V DC-link plus transient overshoot in universal-input PFC stages.
RDS(on) max @ 25 °C0.250 Ω - Enables <1.5 W conduction loss at 7.8 A RMS in 300 W server PSU main switch.
Qg typ26 nC - Reduces gate drive power and allows use of low-cost 1 W gate drivers in 65 kHz designs.
EAS345 mJ - Supports reliable single-pulse avalanche operation during output short-circuit events.
dv/dt ruggedness480 V/ns - Prevents spurious turn-on in high-noise, high-dV/dt environments like motor drives and inverters.
RthJC3.75 K/W - Allows 12 A continuous operation with ≤40 °C case temperature rise using standard heatsink.
tr/tf17 ns / 12 ns - Enables clean, low-EFT switching transitions in high-frequency SMPS without snubbers.

Pinout & Package

PG-TO220FP package: isolated flange, vertical lead frame, 3-pin through-hole mounting with drain-connected tab. Thermal path optimized via direct die-to-flange interface.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main power output terminalElectrically connected to metal flange; requires insulated mounting hardware for non-grounded heatsinks.
SourcePower return and reference nodeLow-inductance source connection critical for minimizing switching oscillation and EMI in high-di/dt applications.
GateControl inputHigh-impedance MOS control node; requires <23.1 Ω series resistance to damp ringing per recommended test condition.

Key Features

FeatureDesign Value
Ultra-low RDS(on) × Qg6.5 Ω·nC - Delivers best-in-class efficiency trade-off for 600 V MOSFETs in 50–100 kHz hard-switched converters.
Extreme dv/dt rating480 V/ns - Eliminates need for external gate clamping in >400 V DC-link systems with fast voltage transients.
JEDEC-qualified reliabilityQualified per JESD22-A108 and J-STD-20 - Validated for 10-year field life in industrial-grade power supplies.
Robust body diode330 ns trr, 27 A Irrm - Supports quasi-resonant operation and reduces need for external freewheeling diodes in flyback designs.

Applications

Server Power SupplyIndustrial AC/DC Adapter

Use Scenario: Main switch in 400–500 W 80 PLUS Titanium server PSU operating at 75 kHz with synchronous rectification.

IC Role / Device Role / Timing Role: High-side switching element handling 12 A peak drain current and 400 V DC-link voltage.

Use Value: 0.25 Ω RDS(on) limits conduction loss to <2.3 W at full load, enabling >96% efficiency at 50% load.

Use Scenario: PFC boost switch in 300 W industrial AC/DC adapter with universal input (90–264 VAC).

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) PFC switch requiring low Qg and high avalanche capability.

Use Value: 26 nC Qg reduces gate drive loss by 35% vs. legacy 600 V MOSFETs, improving light-load efficiency.

Solar MicroinverterMotor Drive Inverter Stage

Use Scenario: DC–AC H-bridge switch in 300 W solar microinverter with transformerless topology.

IC Role / Device Role / Timing Role: Half-bridge leg switch subjected to 600 V blocking and repetitive 150 A surge currents.

Use Value: 345 mJ EAS withstands repeated line surges and PV string faults without degradation.

Use Scenario: Low-side switch in 1 kW BLDC motor drive operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: Fast-switching power stage component managing 10 A RMS current and 400 V bus voltage.

Use Value: 12 ns fall time ensures minimal switching overlap loss, reducing thermal stress on gate driver ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP60N60DM6RDS(on) = 0.22 Ω, Qg = 35 nC, RthJC = 3.5 K/WHigher gate charge increases driver loss; better thermal resistance supports higher ambient temps.Prefer when thermal margin is constrained but gate drive capability is ample.
IXFH30N60XRDS(on) = 0.24 Ω, Qg = 22 nC, EAS = 220 mJLower Qg improves high-frequency efficiency; reduced avalanche rating limits fault tolerance.Prefer for >100 kHz resonant converters where avalanche stress is minimal.

Compared with STP60N60DM6 and IXFH30N60X, IPA60R250CPXKSA1 offers the lowest RDS(on) × Qg product (6.5 Ω·nC), making it optimal for space-constrained, medium-frequency SMPS where both conduction and switching losses must be minimized simultaneously.

Availability

IPA60R250CPXKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC/DC adapters, solar microinverters, and motor drive inverter stages requiring stable component supply and long-term lifecycle support.

Supply support for IPA60R250CPXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS® C-series, engineered specifically for high-efficiency, hard-switched SMPS topologies demanding low RDS(on) × Qg and robust avalanche performance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPA60R250CPXKSA1 supports 8 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PG-TO220FP package and ensures safe junction temperature operation below 150 °C under typical heatsinking conditions.

Does this MOSFET require a negative gate turn-off voltage?

No. The IPA60R250CPXKSA1 has a gate threshold voltage range of 2.5–3.5 V and is fully compatible with standard 0 V to +10 V or +12 V gate drive schemes. Negative turn-off voltage is not required or recommended, as the device exhibits no parasitic turn-on under rated dv/dt conditions.

How does the body diode performance compare to standard silicon diodes?

Its body diode shows 0.9–1.2 V forward voltage at 7.8 A and 25 °C, with 330 ns reverse recovery time and 4.5 µC Qrr. While slower than dedicated SiC Schottky diodes, it outperforms standard FRDs in softness and enables zero-voltage switching in quasi-resonant topologies without external diode replacement.

Is the PG-TO220FP package lead-free and RoHS compliant?

Yes. The IPA60R250CPXKSA1 uses Pb-free lead plating and complies with RoHS Directive 2011/65/EU. The package is qualified for wave soldering at 260 °C for 10 seconds at 1.6 mm from the case, per JEDEC J-STD-020 standards.

IPA60R250CPXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1300 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
33W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-31

IPA60R250CPXKSA1 FAQ

1.How can I place an order for IPA60R250CPXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R250CPXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R250CPXKSA1 reliable?

The price and inventory of IPA60R250CPXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R250CPXKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R250CPXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R250CPXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R250CPXKSA1?

IPA60R250CPXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R250CPXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R250CPXKSA1?

For technical support, including IPA60R250CPXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R250CPXKSA1 requirements.

6.How does Aetrix verify that IPA60R250CPXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R250CPXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R250CPXKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R250CPXKSA1?

All IPA60R250CPXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R250CPXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R250CPXKSA1 part is unused and in its original packaging.

Return procedure for IPA60R250CPXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPA60R250CPXKSA1 Tags

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