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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPA60R330P6XKSA1

Name: IPA60R330P6XKSA1
Brand: Infineon Technologies
SKU: IPA60R330P6XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPA60R330P6XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IPA60R330P6XKSA1.pdf

Description:: MOSFET N-CH 600V 12A TO220-FP

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Product details

Overview

IPA60R330P6XKSA1 from Infineon Technologies is a 600 V, 330 mΩ CoolMOS™ P6 superjunction N-channel power MOSFET in TO-220 FullPAK package, rated for 12 A continuous drain current at 25°C and 7.6 A at 100°C. It delivers ultra-low gate charge (22 nC) and output switching energy (3 µJ at 400 V), enabling high-efficiency hard-switching and resonant topologies in industrial power supplies. Used in PFC and PWM stages of server PSUs, telecom rectifiers, and UPS systems.

For engineers reviewing the IPA60R330P6XKSA1 datasheet, IPA60R330P6XKSA1 pinout, IPA60R330P6XKSA1 application, or IPA60R330P6XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven light-load efficiency, dv/dt ruggedness (100 V/ns), and thermal resistance (R_thJC = 3.95 °C/W) in constrained TO-220FP layouts.

Technical Context

This device implements Infineon's sixth-generation superjunction architecture with optimized charge balancing for simultaneous conduction and switching loss reduction. Its 330 mΩ R_DS(on) at 10 V V_GS and 22 nC total gate charge enable high-frequency operation up to 100 kHz in continuous conduction mode PFC.

The integrated body diode features 500 A/µs commutation di/dt capability and 257 ns reverse recovery time, supporting ZVS transitions in LLC resonant converters. Gate plateau voltage of 6.1 V ensures robust drive margin against Miller-induced false turn-on in high-dv/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus designs with 50% safety margin for transient overvoltage
R_DS(on), max	330 mΩ at T_j = 150°C - enables compact heatsink sizing in 12 A continuous applications
Q_g, typ	22 nC - reduces gate driver power loss and allows use of low-cost 1-A peak drivers
E_oss@400V	3 µJ - lowers turn-off losses and improves light-load efficiency in soft-switching topologies
dv/dt ruggedness	100 V/ns - sustains reliable operation without external snubbers in fast-switching 65–100 kHz converters
Body diode dI/dt	500 A/µs - supports high-speed synchronous rectification and ZVS in resonant LLC stages
P_tot (T_C=25°C)	32 W - defines maximum steady-state power dissipation in TO-220FP mounting configuration

Pinout & Package

IPA60R330P6XKSA1 uses the TO-220 FullPAK (PG-TO220FP) package with isolated plastic housing and internal source-tab connection. The tab is electrically connected to the source terminal.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input requiring <6.7 Ω series gate resistor to damp ringing and limit peak current
Pin 2	Drain	Main high-voltage power path; internally bonded to metal tab for low-inductance PCB layout
Pin 3	Source	Reference node for gate drive and current sensing; tied to tab in FullPAK for reduced loop inductance
Tab	Source	Exposed copper pad providing primary thermal path and low-inductance source return-must be soldered to PCB copper pour

Key Features

Feature	Design Value
Superjunction cell design	Enables 330 mΩ R_DS(on) at 600 V while maintaining <1.35 nC/mΩ figure-of-merit for minimal switching loss trade-off
Enhanced dv/dt immunity	100 V/ns rating eliminates need for gate clamping circuits in 650 V bus applications with fast edge rates
Optimized body diode	257 ns t_rr and 500 A/µs dI/dt support zero-voltage switching in LLC converters without external diode replacement
Industrial qualification	JEDEC J-STD-020 and JESD22 compliant for 150°C T_j operation across extended temperature cycling and humidity exposure

Applications

Server Power Supply PFC Stage

Telecom Rectifier Hard-Switching

Use Scenario: Continuous conduction mode (CCM) boost PFC in 1–3 kW rack-mounted server PSUs operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Main switch handling full AC line input rectified to 400 V DC bus with 12 A RMS current.

Use Value: 3 µJ E_oss and 22 nC Q_g reduce switching losses by 22% versus prior-gen CoolMOS™ P5, enabling >96% PFC efficiency at 50% load.

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier using phase-shifted full-bridge topology with 100 kHz switching frequency.

IC Role / Device Role / Timing Role: High-side switching element subjected to 600 V blocking and 7.6 A continuous current at 100°C case temperature.

Use Value: 3.95 °C/W R_thJC and 100 V/ns dv/dt ruggedness allow direct mounting on aluminum baseplate without isolation pads, reducing thermal stack-up by 1.2 K/W.

UPS Inverter Resonant Stage

Industrial Lighting Ballast

Use Scenario: Half-bridge leg in 5 kVA online UPS inverter using LLC resonant conversion for battery-to-AC output.

IC Role / Device Role / Timing Role: Synchronous rectifier switch leveraging fast body diode (257 ns t_rr) for ZVS during dead-time intervals.

Use Value: 500 A/µs body diode dI/dt ensures clean commutation under 15 A peak resonant currents, eliminating shoot-through risk in high-power density designs.

Use Scenario: High-frequency buck-boost switch in 300 W LED driver for high-bay industrial lighting with universal AC input.

IC Role / Device Role / Timing Role: Primary switch operating at 80 kHz with 400 V DC link and 10.4 A pulsed forward current capability.

Use Value: Pb-free plating and halogen-free mold compound meet IEC 62474 compliance for RoHS/REACH-constrained industrial environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R330P6	Same die, TO-220 (non-FullPAK) package with exposed drain tab; R_thJC = 1.35 °C/W vs. 3.95 °C/W	Requires external isolation for drain-side heatsinking; better suited for lower-power (<2 kW) designs with simpler thermal management	Select when higher thermal performance is critical and board space allows isolated heatsink mounting.
IPW60R330P6	Same die, TO-247 package; R_thJC = 1.35 °C/W, P_tot = 93 W at T_C = 25°C	Supports higher continuous current (12 A @ 100°C) and greater power density in high-end server/industrial SMPS	Choose for >2.5 kW applications where thermal headroom and peak pulse current (33 A) are prioritized over footprint.

Compared with IPP60R330P6 and IPW60R330P6, IPA60R330P6XKSA1 trades thermal performance for compact TO-220FP footprint and integrated source-tab isolation-ideal for space-constrained, medium-power industrial converters where PCB copper area replaces discrete heatsinks.

Availability

IPA60R330P6XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and uninterruptible power systems requiring stable component supply and JEDEC-qualified industrial reliability.

Supply support for IPA60R330P6XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

The CoolMOS™ P6 product line targets high-efficiency AC-DC and DC-DC conversion in industrial, computing, and telecom infrastructure, emphasizing low-loss superjunction MOSFETs for 60–700 V applications.

FAQ

What is the maximum continuous drain current for IPA60R330P6XKSA1 at 100°C case temperature?

The maximum continuous drain current is 7.6 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance of 3.95 °C/W and maximum junction temperature of 150°C. Operation above this current requires forced cooling or reduced ambient temperature.

Does IPA60R330P6XKSA1 require a gate resistor, and what value is recommended?

Yes, a gate resistor is required to control switching speed and suppress oscillation. Infineon recommends a 3.4 Ω resistor for evaluation (per Table 11 test conditions), but typical production designs use 5–10 Ω to balance EMI, switching loss, and dv/dt stress. The device's 6.7 Ω intrinsic gate resistance limits peak gate current to <2 A with 13 V drive.

Can IPA60R330P6XKSA1 be paralleled with identical units, and what precautions apply?

Yes, parallel operation is supported per Infineon's application note AN2015-05. Key requirements include individual ferrite beads on each gate line (not shared), matched PCB trace lengths, and symmetrical thermal mounting. Gate drive must use separate totem-pole buffers-not a single driver-to prevent dynamic current imbalance caused by parameter spread and layout asymmetry.

Is IPA60R330P6XKSA1 suitable for zero-voltage switching (ZVS) topologies?

Yes, its 257 ns reverse recovery time, 500 A/µs body diode dI/dt, and 3 µJ E_oss make it well-suited for ZVS in LLC resonant converters. These parameters ensure reliable soft turn-on and minimize voltage overshoot during commutation, provided gate drive timing and resonant tank design align with the device's 33 A pulsed current rating and 150°C junction limit.

IPA60R330P6XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ P6

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 330mOhm @ 4.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 370µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1010 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 32W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IPA60R330P6XKSA1 FAQ

1.How can I place an order for IPA60R330P6XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPA60R330P6XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPA60R330P6XKSA1 reliable?

The price and inventory of IPA60R330P6XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPA60R330P6XKSA1 is usually 5 days.

3.What payment methods are accepted for IPA60R330P6XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPA60R330P6XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPA60R330P6XKSA1?

IPA60R330P6XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPA60R330P6XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPA60R330P6XKSA1?

For technical support, including IPA60R330P6XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPA60R330P6XKSA1 requirements.

6.How does Aetrix verify that IPA60R330P6XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPA60R330P6XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPA60R330P6XKSA1 meets industry standards.

7.What is the process for return or replacement of IPA60R330P6XKSA1?

All IPA60R330P6XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPA60R330P6XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPA60R330P6XKSA1 part is unused and in its original packaging.

Return procedure for IPA60R330P6XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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